Zobrazeno 1 - 10
of 320
pro vyhledávání: '"P.N. Robson"'
Autor:
B. K. Ng, C. K. Chia, G.J. Rees, John P. R. David, Mark Hopkinson, Richard C. Tozer, P.N. Robson, R. J. Airey
Publikováno v:
Journal of Applied Physics. 94:2631-2637
Impact ionization in 1–2.5 μm thick AlxGa1−xAs/GaAs multiple quantum well (MQW) avalanche photodiodes with various barrier and well widths has been investigated in detail. The measured avalanche multiplication suggests that in all cases no enhan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5109c0fcb47d0578849b0adf7e81f68b
https://doi.org/10.1063/1.1593217
https://doi.org/10.1063/1.1593217
Publikováno v:
Journal of Applied Physics. 91:5438-5441
A Fokker–Planck equation for carrier transport in semiconductors is derived from the Boltzmann transport equation by expanding in Legendre polynomials and assuming the phonon energy exchanged at momentum randomizing collisions is small compared wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb6dc41407d68d53aacd7481f0d99685
https://doi.org/10.1063/1.1458054
https://doi.org/10.1063/1.1458054
Publikováno v:
Journal of Applied Physics. 90:1314-1317
The probability distribution function (PDF) for impact ionization path length is a crucial quantity for understanding and modeling the low noise behavior of avalanche photodiodes with short multiplication regions. In such devices the ionization coeff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71a44e4c51c0ac137584255f8f6a2451
https://doi.org/10.1063/1.1384854
https://doi.org/10.1063/1.1384854
Publikováno v:
Journal of Applied Physics. 88:2601-2608
A systematic study of the role of band edge discontinuities on ionization rates in periodic AlxGa1−xAs/GaAs structures has been performed by measuring the electron and hole multiplication characteristics in a series of submicron AlxGa1−xAs/GaAs m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8440872ac845dc47a0d24909c7e8d15b
https://doi.org/10.1063/1.1286329
https://doi.org/10.1063/1.1286329
Publikováno v:
Semiconductor Science and Technology. 15:692-699
Ionization coefficients are deduced from photomultiplication measurements on a wide range of AlxGa1-xAs (x = 0 - 0.60) structures where the high-field region thicknesses vary from >1 µm down to 0.05 µm. Despite the dead space becoming an increasing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d681f0dea15482e8d4c9535ca2888242
https://doi.org/10.1088/0268-1242/15/7/307
https://doi.org/10.1088/0268-1242/15/7/307
Publikováno v:
IEE Proceedings - Optoelectronics. 147:11-14
Pulsed and continuous wave (CW) characteristics of visible vertical-cavity surface-emitting lasers (VCSELs) are presented. A simple thermal model which is used to calculate the temperature profile in a device under CW operation as a result of self-he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07b691c9207f79701dfa6f4ec05d9a02
https://doi.org/10.1049/ip-opt:20000243
https://doi.org/10.1049/ip-opt:20000243
Publikováno v:
Journal of Applied Physics. 87:10-21
A scalar variational method for calculating the mode sizes and resonant wavelengths of the eigenmodes in oxide-apertured vertical-cavity surface-emitting lasers is presented. This method uses Hermite–Gaussian (TEMmp) functions to approximate the tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68b1f42692679a89bfb806201c2b6745
https://doi.org/10.1063/1.371819
https://doi.org/10.1063/1.371819
Publikováno v:
IEE Proceedings - Optoelectronics. 146:21-24
The avalanche-multiplication and noise characteristics of a series of thin (0.05 /spl mu/m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a91a444ea46a2419fc073f8f109eaf9
https://doi.org/10.1049/ip-opt:19990453
https://doi.org/10.1049/ip-opt:19990453
Publikováno v:
Journal of Applied Physics. 84:4363-4369
Impact ionization involving transport across a single heterojunction has been studied by measuring the electron and hole initiated multiplication, Me and Mh, in a series of p+in+ AlxGa1−xAs(500 A)/GaAs(500 A) heterostructures with x ranging from 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d87780dcdc96ed43f8e5de0f538024
https://doi.org/10.1063/1.368656
https://doi.org/10.1063/1.368656
Autor:
Toshihiro Kato, J. Woodhead, P.N. Robson, Takashi Saka, Hiromichi Horinaka, J.S. Roberts, Masumi Hirotani, Terence Edward Sale
Publikováno v:
DENKI-SEIKO[ELECTRIC FURNACE STEEL]. 69:243-247
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81b9ce9faf4d4cdd291dd21cae888d1a
https://doi.org/10.4262/denkiseiko.69.243
https://doi.org/10.4262/denkiseiko.69.243