Zobrazeno 1 - 10
of 551
pro vyhledávání: '"P.M. Petroff"'
Autor:
P.M. Petroff, G. Medeiros-Ribeiro
Publikováno v:
MRS Bulletin. 21:50-54
Recent technological and materials advances in semiconductors have brought about the possibility of producing heterostructures within which carriers are confined to an ultrasmall region of space (a few thousand atoms) by a potential barrier. When the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58dfe0aa2d52ace2a6cc2839335d32c2
https://doi.org/10.1557/s088376940003534x
https://doi.org/10.1557/s088376940003534x
Autor:
L.A. Coldren, J. A. Skidmore, D. L. Green, Z. Xu, G.D. Spiers, J.H. English, Evelyn L. Hu, D. B. Young, P.M. Petroff
Publikováno v:
LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4f24f9c78d35e3bb46c6bcb5f890b46
https://doi.org/10.1109/leosst.1991.639006
https://doi.org/10.1109/leosst.1991.639006
Publikováno v:
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C.
VCSELs are increasingly being adopted for use in data communications products, with numerous other applications being explored. Their low threshold current, circular beam, and excellent temperature stability are advantageous for many applications. Wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a88dc2058ff7a5f178843fdcbdd4e949
https://doi.org/10.1109/leosst.1997.619113
https://doi.org/10.1109/leosst.1997.619113
Publikováno v:
Proceedings of International Reliability Physics Symposium RELPHY-96.
We present the results of our failure analysis of proton-implanted vertical cavity surface emitting lasers (VCSELs). We show that VCSELs have a unique failure mode with the degradation occurring not only in the active regions, but also strikingly in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9824d1d37bdf18b18f81fd635dc5861
https://doi.org/10.1109/relphy.1996.492121
https://doi.org/10.1109/relphy.1996.492121
Publikováno v:
Quantum Optoelectronics.
We will discuss the photoluminescence, modulated photoluminescence and transport properties in InAs and InAlAs self assembled quantum dots. We will also show evidence of three dimensional carrier confinement above 77K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b5c7a9b107c3e8a26c5e6ce31263c1b
https://doi.org/10.1364/qo.1995.qthc2
https://doi.org/10.1364/qo.1995.qthc2
Autor:
P.M. Petroff
Publikováno v:
Le Journal de Physique Colloques. 40:C6-201
This paper reviews the low temperature dislocation climb process in III-V compounds semiconductors and points out areas in which more experimental information is needed to understand this complex problem. A dislocation climb model requiring the super
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dbe4d4bfe5af2e385b046de24547a5c
https://doi.org/10.1051/jphyscol:1979640
https://doi.org/10.1051/jphyscol:1979640
Autor:
E.G. McRae, P.M. Petroff
Publikováno v:
Surface Science. 147:385-395
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ea9fb5119b6a912e2f7f31231372fe8
https://doi.org/10.1016/0039-6028(84)90461-8
https://doi.org/10.1016/0039-6028(84)90461-8
Publikováno v:
Ultramicroscopy. 17:185-191
A scanning transmission electron microscope has been specifically designed for studies of reconstructed surfaces and epitaxial growth processes. Incorporation of a molecular beam epitaxy system, Auger spectrometer and ion gun along with ultra-high va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::303f0e2d85fe32cf321d3b56c138f247
https://doi.org/10.1016/0304-3991(85)90085-3
https://doi.org/10.1016/0304-3991(85)90085-3
Autor:
P.M. Petroff
Publikováno v:
Ultramicroscopy. 31:67-72
We present and discuss the structural analysis of two-dimensional ultrastructures composed of tilted superlattices and quantum wire superlattices. We show that transmission electron microscopy (TEM) allows us to draw conclusions about the kinetics of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b25061c5f695bb6bb980e1dd085306f
https://doi.org/10.1016/0304-3991(89)90035-1
https://doi.org/10.1016/0304-3991(89)90035-1
Autor:
P.M. Petroff
Publikováno v:
Quantum Wells for Optics and Optoelectronics.
Two dimensional band gap modulation in GaAs-AlGaAs structures grown by MBE is demonstrated using several approaches. In the first method a tilted superlattice (TSL) having interface planes tilted with respect to the substrate surface is directly grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7564a96a27419ac60dc25e6d450290e
https://doi.org/10.1364/qwoe.1989.tua1
https://doi.org/10.1364/qwoe.1989.tua1