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pro vyhledávání: '"P.M. Mooney"'
Akademický článek
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Autor:
I. Lagnado, P.R. de la Houssaye, W.B. Dubbelday, S.J. Koester, R. Hammond, J.O. Chu, J.A. Ott, P.M. Mooney, L. Perraud, K.A. Jenkins
Publikováno v:
2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397).
The major issues, which confronted the formation of very thin layers of silicon (30-100 nm) on sapphire substrates for application to MM-wave communication and sensors were investigated. The focus of the investigation was, and still is, to achieve a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4b5c188735e9c49b4519e6e286653ae
https://doi.org/10.1109/smic.2000.844303
https://doi.org/10.1109/smic.2000.844303
Autor:
P.M. Mooney
Publisher Summary This chapter discusses the methods of capacitance spectroscopy and the instrumentation with which these methods are implemented. The chapter also describes the properties of growth of semiconductors. The technological importance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e5cdc6b6a3d10bcd281f681c2313644
https://doi.org/10.1016/s0080-8784(08)62975-0
https://doi.org/10.1016/s0080-8784(08)62975-0
Publikováno v:
Advances in X-Ray Analysis ISBN: 9780306450457
Both double-crystal and triple-axis x-ray diffraction techniques have been used to study complex SiGe/Si structures. A novel method for measuring the nucleation activation energy of dislocation in strain relaxed SiGe/Si structures is presented to ill
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1b8f717a506817b489b68a3777b0baa
https://doi.org/10.1007/978-1-4615-1797-9_20
https://doi.org/10.1007/978-1-4615-1797-9_20
Publikováno v:
Powder Diffraction. 20:174-174
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935d4a66582303cc955c6f5170e0b306
https://doi.org/10.1154/1.1979032
https://doi.org/10.1154/1.1979032
Publikováno v:
Physica B+C. 116:431-435
DLTS and EPR measurements were done on the same samples of Zn-doped GaP, both as grown and irradiated with 2 MeV electrons. An irradiation induced trap measured by DLTS with thermal activation energy of 0.64 eV for the emission of a hole to the valen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a86816cfd04a12c27b68e124476d1ed7
https://doi.org/10.1016/0378-4363(83)90286-3
https://doi.org/10.1016/0378-4363(83)90286-3
Publikováno v:
Journal of Crystal Growth. 93:569-575
Deep levels in p-type GaAs have direct impact on the performance of many devices, such as the hetero-junction transistor (HBT). We have studied the influences of dopant elements (Mg or Zn), growth temperature, and doping concentration on the characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cad208230ad407a1cc3e2c516c39ac1
https://doi.org/10.1016/0022-0248(88)90585-4
https://doi.org/10.1016/0022-0248(88)90585-4
Publikováno v:
Journal de Physique Lettres. 40:19-22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0fd7260c2d8ec68816e75a3c00bf216
https://doi.org/10.1051/jphyslet:0197900400201900
https://doi.org/10.1051/jphyslet:0197900400201900
Publikováno v:
Thin Solid Films. 3:377-385
The anode, cathode, and a.c. spectra of galvanoluminescent aluminum were measured in 1% aqueous H3PO4, using 140 V, 110 V, and 128 V respectively. Aluminum of technical purity, zone-refined aluminum, and zone-refined aluminum doped with single elemen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::063f7a8946b125574d5f19c369366a33
https://doi.org/10.1016/0040-6090(69)90053-4
https://doi.org/10.1016/0040-6090(69)90053-4
Akademický článek
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