Zobrazeno 1 - 10
of 39
pro vyhledávání: '"P.L. Vuillermoz"'
Publikováno v:
Microelectronics Journal. 30:1137-1140
The aim of this work is to develop a reliable and precise non-destructive characterisation method for devices testing using infrared thermography. Our method is applied to submicronic junction solar cell characterisation. Two types of measurements ar
Publikováno v:
Solar Energy Materials and Solar Cells. 51:233-242
In this paper we show how to improve greatly the resolution of IR thermography by using two different signal treatment methods: a static treatment and a dynamical treatment. This signal processing allows the study of 100 cm 2 cells under low-forward
Application of infrared thermography to the characterization of multicristalline silicon solar cells
Publikováno v:
Proceedings of the 2000 International Conference on Quantitative InfraRed Thermography.
In this study, infrared thermography is used to detect defects in large area (100 cm 2 ) multicrystalline silicon solar cells. Hot spot observed in biased solar cells are correlated to a critical processing step which needs to be improved. Usually th
Publikováno v:
Materials Science and Engineering: B. 7:217-219
An Eddy current apparatus is used to study the quality of some YBaCuO ceramics. This technique has the following advantages: (1) it needs no electrical contacts, (2) it allows T c measurements, (3) it performs R(T) measurements in a wide frequency ra
Publikováno v:
Journal of Magnetism and Magnetic Materials. :571-572
Magnetomechanical measurements using a superconducting SQUID magnetic gradiometer and a tensile-testing machine have been performed on a variety of steel specimens to determine the change in magnetization due to applied stress and the possible applic
Autor:
J. Jouglar, P.L. Vuillermoz
Publikováno v:
Journal de Physique. 45:791-797
The low temperature thermal conductivity of undoped and chromium-doped InP has been measured between 1.3 and 300 K; the experimental results have been analysed according to two models. Holland's model is convenient for high purity InP and in a wide t
Publikováno v:
physica status solidi (b). 63:271-278
The influence of a heat treatment on the thermal conductivity of GaAs in the range 5 to 77°K has been investigated. Below 20 °K the results are interpreted on the basis of scattering of phonons by extended defects (clusters). Using Callaway's analy
Autor:
P.L. Vuillermoz, J. Jouglar
Publikováno v:
Materials Science Forum. :797-802
Publikováno v:
Journal of Solid State Chemistry. 20:227-232
In nonstoichiometric materials, the expressions for the phonon-dislocation relaxation time are not sufficient if they only take into account the strain field influence. Low temperature thermal conductivity measurements, associated with SEM micrograph
Autor:
J. Jouglar, P.L. Vuillermoz
Publikováno v:
Journal of Solid State Chemistry. 52:174-179
Resume La conductibilite thermique de monocristaux d'InP non dope a ete mesuree entre 1,5 et 300 K. Ces resultats ont ete interpretes theoriquement avec le modele de Holland. Il a permis de decrire correctement cette courbe k(T) dans un domaine de te