Zobrazeno 1 - 10
of 21
pro vyhledávání: '"P.K. Ikalainen"'
Publikováno v:
MTT-S International Microwave Symposium Digest.
Techniques for the design of band-pass filters using dielectric waveguide gratings are discussed. Direct-coupled-resonator filter theory is applied to synthesize a prescribed pass band having a Chebyshev or maximally flat characteristic, and at the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6559e577a17a284e073332667f3c6d8c
https://doi.org/10.1109/mwsym.1985.1131962
https://doi.org/10.1109/mwsym.1985.1131962
Autor:
P.K. Ikalainen
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
Design equations are derived for an RLC matching network. The equations can be applied in lossy-match MESFET amplifiers to give flat gain and low SWR (standing wave ratio) over wide bandwidths. Experimental results are presented for a monolithic 1-20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af2333b57019979fd4677f1800c6a419
https://doi.org/10.1109/mwsym.1989.38918
https://doi.org/10.1109/mwsym.1989.38918
Autor:
P.K. Ikalainen
Publikováno v:
1992 IEEE Microwave Symposium Digest MTT-S.
An optimum scaling that maximizes the (output and input) two-tone third-order intercept point of an amplifier with respect to DC power consumption is derived. The expression for spurious-free dynamic range of a high-gain amplifier is factored to sepa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f01dd9f3fb7e68e35404ff9f5d1cdc8
https://doi.org/10.1109/mwsym.1992.187977
https://doi.org/10.1109/mwsym.1992.187977
Publikováno v:
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.
Low-noise, low-DC-power linear amplifiers using high-dynamic-range GaAs/int FETs are discussed. Noise figures as low as dB have been achieved in a Ku-band amplifier simultaneously with over 36-dBm OIP3 and 18-dB gain with only 655 mW of DC power. A w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87afa6bedee1632f6bf58a2586183281
https://doi.org/10.1109/mcs.1993.247454
https://doi.org/10.1109/mcs.1993.247454
Autor:
P.K. Ikalainen
Publikováno v:
Electrical Performance of Electronic Packaging.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::201a8c8b56b5d19cf69d26a55c5d7df1
https://doi.org/10.1109/epep.1996.564822
https://doi.org/10.1109/epep.1996.564822
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
An internally matched HBT has been developed for use in communications systems. An output power of 20 W with 6.5 dB gain and 40% PAE at 7.5 GHz was achieved. Over the 7.25 to 7.75 GHz band minimum output power was 16.5 W with minimum 38% PAE. Two ton
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2746d86b720e360b2256dfeca90e886a
https://doi.org/10.1109/mwsym.1994.335515
https://doi.org/10.1109/mwsym.1994.335515
Autor:
P.K. Ikalainen, T.S. Henderson
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
We report a two-temperature RF bias stress test on nominal 1.2 W 2.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTFs of 2020 and 1340 hours were obtained at Tj=218/spl deg/C and 245/spl deg/C, respectively, under nominal input bias. An activation ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba3101ab7c18edb135041586c7c1b2e4
https://doi.org/10.1109/gaas.1995.528982
https://doi.org/10.1109/gaas.1995.528982
Autor:
P.K. Ikalainen, L.C. Witkowski
Publikováno v:
Electronics Letters. 27:945-946
A highly linear GaAs MESFET has demonstrated an output two-tone third-order intercept point of 42.2 dBm at 10 GHz with 3.15 dB noise figure and 9.1 dB gain with only 240 mW of DC bias. Minimum noise figure was 1.24 dB.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55aebc1953c054afb4d4f7fca695a28e
https://doi.org/10.1049/el:19910590
https://doi.org/10.1049/el:19910590
Autor:
P.K. Ikalainen, G.L. Matthaei
Publikováno v:
Ikäläinen, P & Matthaei, G 1987, ' Design of Broad-Band Dielectric Waveguide 3-dB Couplers ', IEEE Transactions on Microwave Theory and Techniques, vol. 35, no. 7, pp. 621-628 . https://doi.org/10.1109/TMTT.1987.1133720
It is shown how 3-dB couplers with bandwidths on the order of 30 percent can be designed by appropriately taking advantage of the dispersion and the frequency dependence of coupling per unit length between two dielectic waveguides with asymmetrical c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a1e22f5d235d62ac21c4827b68194af
https://cris.vtt.fi/en/publications/c0b3b4a7-e181-4d44-b034-387c4ad2c618
https://cris.vtt.fi/en/publications/c0b3b4a7-e181-4d44-b034-387c4ad2c618
Autor:
G.L. Matthaei, P.K. Ikalainen
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 34:681-689
Techniques for the design of narrow-band (of the order of a percent or so), bandpass filters using dielectric waveguide gratings are presented. These filters use both single, uncoupled gratings and parallel-coupled configurations of gratings to form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd136e11983d5abe1216986b18f3eff
https://doi.org/10.1109/tmtt.1986.1133417
https://doi.org/10.1109/tmtt.1986.1133417