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pro vyhledávání: '"P.K. Baumann"'
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Autor:
D. Greiner, N. Meyer, V. Hinrichs, W. Ludwig, D. Keiper, Konstantinos Fostiropoulos, P.K. Baumann, Marin Rusu, M. Ch. Lux-Steiner, S. Wiesner, Michael Heuken
Publikováno v:
Thin Solid Films. 534:255-259
We determine the optical constants, that is, refractive index n, extinction coefficient k, and absorption coefficient α, of diindenoperylene (DIP) films deposited by organic vapor phase deposition (OVPD®) on quartz glass at different substrate temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ed8ca7400e8af2f5c79b88fa049711f
https://doi.org/10.1016/j.tsf.2013.03.014
https://doi.org/10.1016/j.tsf.2013.03.014
Autor:
Robert J. Nemanich, P.K. Baumann
Publikováno v:
Scopus-Elsevier
In this study ultraviolet photoemission spectroscopy was employed to correlate the electron affinity and Schottky barrier height of Cu films on type-IIb ($p$-type) diamond (100), (111), and (110) surfaces. Furthermore, field emission measurements wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39c04eb33a07b24e896fb95e3c6a8b2e
https://doi.org/10.1103/physrevb.58.1643
https://doi.org/10.1103/physrevb.58.1643
Autor:
Okhyun Nam, A. T. Sowers, M. C. Benjamin, B. L. Ward, Robert J. Nemanich, Robert F. Davis, Harald Ade, P.K. Baumann
Publikováno v:
Applied Surface Science. :694-703
Wide bandgap semiconductors have the possibility of exhibiting a negative electron affinity (NEA) meaning that electrons in the conduction band are not bound by the surface. The surface conditions are shown to be of critical importance in obtaining a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f60e9381cb1913b11d247d914ae9d8ec
https://doi.org/10.1016/s0169-4332(98)00140-8
https://doi.org/10.1016/s0169-4332(98)00140-8
Autor:
Robert J. Nemanich, P.K. Baumann
Publikováno v:
Journal of Applied Physics. 83:2072-2082
The electron emission properties of metal–diamond (100), (111), and (110) interfaces were characterized by means of UV photoemission spectroscopy (UPS) and field-emission measurements. Different surface cleaning procedures including annealing in ul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75e88907ce196f5dae490bf550cca8d7
https://doi.org/10.1063/1.366940
https://doi.org/10.1063/1.366940
Publikováno v:
Scopus-Elsevier
In this study, the electron affinity and Schottky barrier height of thin Cu and Zr films on diamond (100) substrates were correlated by means of UV photoemission spectroscopy (UPS) measurements. Prior to metal deposition the diamond crystals were cle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf985ebb3ef80ab6969d67004a93fa02
https://doi.org/10.1016/s0925-9635(96)00601-2
https://doi.org/10.1016/s0925-9635(96)00601-2
Autor:
X. Garros, P. Caubet, L. Tosti, Francois Andrieu, N. Allouti, C. Le Royer, F. Ponthenier, Sébastien Barnola, P.K. Baumann, S. Morvan, U. Weber, P. Perreau, Gerard Ghibaudo, A. Seignard, C. Euvrard, Yves Morand, Maurice Rivoire, L. Desvoivres, M.-C. Roure, C. Leroux, F. Martin, R. Gassilloud, M. Casse, Olivier Weber, Thierry Poiroux, Pascal Besson
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩
Microelectronic Engineering, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩
Microelectronic Engineering, Elsevier, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩
Microelectronic Engineering, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩
Graphical abstractDisplay Omitted We integrated a gate-last on high-k first on planar fully depleted SOI MOSFETs.pMOSFETs reach a low threshold voltage of VTp=-0.2V.Gate-last pMOSFETS present one decade gate current gain compared to gate first ones.T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55f688bcbb398063cfd6caffbf58fdf0
https://hal.archives-ouvertes.fr/hal-00996453
https://hal.archives-ouvertes.fr/hal-00996453
Autor:
Robert J. Nemanich, P.K. Baumann
Publikováno v:
Applied Surface Science. :267-273
UV photoemission measurements were used to relate the electron affinity and Schottky barrier of thin Co layers on diamond (100) surfaces. Cobalt films of 2 A thickness were deposited on natural single crystal diamond (100) substrates by hot filament
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b301d6a0b300345ac2e994fcdbe958c5
https://doi.org/10.1016/s0169-4332(96)00156-0
https://doi.org/10.1016/s0169-4332(96)00156-0
Autor:
P.K. Baumann, Robert J. Nemanich
Publikováno v:
Diamond and Related Materials. 4:802-805
The effects of annealing and a H plasma exposure on natural type IIb diamond (100) were investigated by means of ultraviolet photoemission spectroscopy (UPS). The diamond (100) surface was found to exhibit a negative electron affinity (NEA) following
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb3abe23062bd433451c29873ea47f9e
https://doi.org/10.1016/0925-9635(94)05228-x
https://doi.org/10.1016/0925-9635(94)05228-x
Autor:
Robert J. Nemanich, P.K. Baumann, Nalin R. Parikh, Lisa M. Porter, K. Ishibashi, T. P. Humphreys, Robert F. Davis
Publikováno v:
Diamond and Related Materials. 3:883-886
In this study Cu films of 30 nm and 200 nm thickness have been grown on natural type IIb semiconducting diamond C(001) substrates by electron-beam evaporation at 500 °C in UHV. As evidenced by Rutherford backscattering/channeling techniques and in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b38173d3420c72e36e37daa6a6c1252
https://doi.org/10.1016/0925-9635(94)90292-5
https://doi.org/10.1016/0925-9635(94)90292-5