Zobrazeno 1 - 10
of 160
pro vyhledávání: '"P.J. Silverman"'
Publikováno v:
Microelectronics Reliability. 45:427-436
Transmission line pulse (TLP) measurements are used to demonstrate that oxynitride breakdown projections from DC measurements using conventional area and voltage-scaling techniques can be extended to the nanosecond time-scale. ESD protection systems
Publikováno v:
IEEE Transactions on Electron Devices. 49:239-246
For Part I see ibid., vol.49, no.2, pp.232-8 (2002). Based on the theory of soft and hard breakdown established in Part I of this paper, we now study the principles of area, thickness, voltage, and circuit configuration dependence of hard and soft br
Publikováno v:
IEEE Transactions on Electron Devices. 49:232-238
A theory of the statistical origin of soft and hard breakdown, that can explain a wide range of experimental data, is proposed. The theory is based on the simple premise that the severity of breakdown depends on the magnitude of the power dissipation
Publikováno v:
Microelectronic Engineering. 59:137-147
The present status of computational models for oxide reliability and their success in interpreting the experimental data are reviewed. We find that significant progress has been made in theoretical modeling of all aspects of reliability, and this und
Publikováno v:
Microelectronic Engineering. 59:17-23
We observe soft breakdowns at all positions along the gates of N-MOSFETs when testing is performed at low voltage or with low current compliance. Devices whose breakdown spots are at or near the gate–drain overlap region have the highest off-curren
Autor:
Paul E. Dodd, Martin L. Green, G.L. Hash, P.J. Silverman, L.P. Schanwald, K.S. Krisch, F.W. Sexton, Marty R. Shaneyfelt, Daniel M. Fleetwood, B. E. Weir, R.A. Loemker
Publikováno v:
IEEE Transactions on Nuclear Science. 45:2509-2518
No correlation was observed between single-event gate rupture (SEGR) and precursor damage by heavy-ion irradiation for 7-nm thermal and nitrided oxides. Precursor ion damage at biases below SEGR threshold for fluence variations over three orders of m
Autor:
Heribert Lorenz, Friedrich Schäffler, M. Holzmann, A Kriele, Jörg P. Kotthaus, D. Monroe, Gerhard Abstreiter, D. Többen, P.J. Silverman, Ya-Hong Xie
Publikováno v:
Semiconductor Science and Technology. 10:1413-1417
Antidot superlattices with a period of a=500 nm and different etch depths were fabricated in two-dimensional hole gases confined in surface-side as well as in substrate-side modulation-doped Ge/SiGe heterostructures by holographic lithography and rea
Publikováno v:
Materials Science Forum. :471-482
Publikováno v:
Journal of Applied Physics. 73:8364-8370
A procedure for the fabrication of two‐dimensional carrier (electron and hole) gases in modulation doped GeSi/Si heterostructures is presented. The best 4.2 K mobilities measured for the two‐dimensional electron and hole gases are 180 000 cm2/V s
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
A theory of the current-ratio technique, which is widely used to locate gate oxide breakdown spots in one dimension (i.e., distance from source or drain), is proposed and verified. The theory shows that the current-ratio method is a special case of g