Zobrazeno 1 - 10
of 23
pro vyhledávání: '"P.J. Pokela"'
Publikováno v:
Applied Surface Science. 53:364-372
The performance of reactively RF sputtered tungsten nitride diffusion barriers in both amorphous (W 76 N 24 ) and polycrystalline (W 46 N 54 ) forms is studied in the 〈Si〉/W 100- x N x /Cu contact metallization by electrical measurements on shall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9788679827ddf7ee1e35f690dd4b7841
https://doi.org/10.1016/0169-4332(91)90287-t
https://doi.org/10.1016/0169-4332(91)90287-t
Publikováno v:
Applied Surface Science. 53:373-376
Thin films of amorphous Ta-Si-N alloys were deposited by reactive RF sputtering of a Ta5Si3 target in an Ar/N2 ambient. These alloy films were tested as diffusion barriers between Al and Si, as well as between Cu and Si. Electrical measurements on Sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f585d1d2c1e335706721460256a1d5a7
https://doi.org/10.1016/0169-4332(91)90288-u
https://doi.org/10.1016/0169-4332(91)90288-u
Publikováno v:
Materials Science and Engineering: B. 10:165-169
The diffusion of gold in amorphous W80N20 deposited onto oxidized silicon substrates is investigated by the radiotracer method using ion beam sputtering as a serial sectioning technique with high depth resolution. The diffusivity in the investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e0c607d552ccf3c32bcf0b06a69f64b
https://doi.org/10.1016/0921-5107(91)90122-c
https://doi.org/10.1016/0921-5107(91)90122-c
Publikováno v:
Thin Solid Films. 203:259-266
The thermal stability of amorphous, r.f.-sputtered Ta 36 Si 14 N 50 films is studied for application as a diffusion barrier between aluminum and gold layers. Analyses by backscattering spectrometry, scanning electron microscopy together with energy-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b24ecda7c4f643730dd35a358caef892
https://doi.org/10.1016/0040-6090(91)90133-i
https://doi.org/10.1016/0040-6090(91)90133-i
Autor:
Reijo Lappalainen, P.J. Pokela
Publikováno v:
Thin Solid Films. 196:215-221
Forward recoiling spectroscopy has been used to profile hydrogen concentrations in multilayer thin film electroluminescent (TFEL) structures grown by atomic layer epitaxy. The reversible current-voltage and brightness-voltage characteristics of an a.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::431b4474df0bb513765abedff09d8729
https://doi.org/10.1016/0040-6090(91)90364-4
https://doi.org/10.1016/0040-6090(91)90364-4
Autor:
P.J. Pokela
Publikováno v:
Thin Solid Films. :489-500
The electro-optical performance of different thin film electroluminescent structures was studied by changing the composition and the deposition method of the lower dielectric adjacent to the atomic layer epitaxy (ALE) grown ZnS:Mn. Al2O3 deposited by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49801174493359d859a655a9469caadb
https://doi.org/10.1016/s0040-6090(05)80059-8
https://doi.org/10.1016/s0040-6090(05)80059-8
Publikováno v:
IEEE Electron Device Letters. 12:321-323
Electrical measurements on shallow Si n/sup +/-p junction diodes with a 30-nm TiSi/sub 2/ contacting layer demonstrate that an 80-nm-thick amorphous Ta/sub 36/Si/sub 14/N/sub 50/ film prepared by reactive RF sputtering of a Ta/sub 5/Si/sub 3/ target
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af0043cf5763183dd51c1cdd22a0558a
https://doi.org/10.1109/55.82074
https://doi.org/10.1109/55.82074
Publikováno v:
Thin Solid Films. 181:259-266
Numerous ion beam analysis techniques, e.g. Rutherford backscattering (RBS), proton induced γ-ray emission (PIGE), nuclear resonance broadening (NRB), proton induced X-ray emission (PIXE), and forward recoiling spectroscopy (FRES) were applied to an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::729eb055b78704ca7dc85c7d1f6b139c
https://doi.org/10.1016/0040-6090(89)90493-8
https://doi.org/10.1016/0040-6090(89)90493-8
Publikováno v:
Thin Solid Films. 166:113-120
The role of Ti-W/Au bumping in reliability and hermeticity testing environments has been studied using both epoxy- and silicon-encapsulated tape automated bonding (TAB) chips, plastic chip carriers and bare TAB chips, with and without bump test openi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b1bcddab87fd8dee3090e876b42408d
https://doi.org/10.1016/0040-6090(88)90371-9
https://doi.org/10.1016/0040-6090(88)90371-9
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