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Autor:
P.J. McNulty, Kelvin F. Poole
Publikováno v:
IEEE Transactions on Nuclear Science. 59:1113-1116
UVPROM devices programmed as dosimeters exhibit a linear dependence on the temperature maintained during the read operation. Raising the temperature lowers the absorbed dose per bit flip. This exposes latent measurements of lower absorbed doses, thus
Autor:
N. Rajaram, P.J. McNulty, M. Alkhafazi, K.R. Freeman, L.Z. Scheick, Kelvin F. Poole, J.P. Dyar, M.G. Randall
Publikováno v:
IEEE Transactions on Nuclear Science. 53:1859-1862
A simplified procedure for measuring the absorbed dose using floating-gate transistors is presented and demonstrated on 64 K UVPROMs. Reading the dosimeter involves a standard electrical readout at 5 V, generates shifts in the response curve that are
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2300-2306
A commercial ultraviolet erasable programmable read-only memory (UVPROM) was used to demonstrate a dosimetry technique for both ground and space applications. An equivalent amount of UV to reproduce the same amount of erasure was used to calibrate do
Autor:
Michael Fennell, L. Call, R. Perez, D. Stroebel, A. Paccagnella, J. Reneau, M. Crisler, Kelvin F. Poole, M.G. Randall, G. Cellere, P.J. McNulty
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2597-2601
The dynamic range and resolution of dosimeters based on floating-gate transistors with electronic readout can be significantly improved by simple changes in the readout process and an increase in the number of memory cells used. The new procedure is
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3381-3387
The energy-deposition spectra measured by the CRRES (Combined Release and Radiation Effects Satellite) pulse height analyzer (PHA) experiment are reexamined to determine the relative contributions from the different mechanisms by which large localize
Publikováno v:
IEEE Transactions on Nuclear Science. 50:2251-2255
We compare deposition spectra from monoenergetic neutron irradiation to CUPID simulations of the same neutron exposures. CUPID does not agree with the experimental data unless pion production is included in the neutron-nucleon interaction. Pion-produ
Publikováno v:
IEEE Transactions on Nuclear Science. 49:3016-3021
Radiation effects on floating-gate-metal-oxide-semiconductor (FGMOS) devices in the passive or quiescent mode are due to a combination of the removal of negative charge from the floating gate and the generation and trapping of positive charge in the
Autor:
Paul W. Marshall, M.S.T. Liu, R. Reedy, S. P. Buchner, B. Fodness, Hak Kim, W. Heikkila, P.J. McNulty, Raymond L. Ladbury, Robert A. Reed, C.J. Tabbert, T.A. Jordan, Ken LaBel
Publikováno v:
IEEE Transactions on Nuclear Science. 49:3038-3044
Historically, proton-induced single-event effects (SEES) ground test data are collected independent of the orientation of the microelectronic device to the proton beam direction. In this study, we present experimental and simulation evidence that sho
Publikováno v:
IEEE Transactions on Nuclear Science. 48:2050-2055
We present results from a radiation dosimeter based on the erasure of floating-gate MOS transistors. Background theory and analysis necessary to describe the operation of the sensor are presented.