Zobrazeno 1 - 10
of 93
pro vyhledávání: '"P.J. McMarr"'
Autor:
Ickhyun Song, Vibhor Jain, Jeffrey H. Warner, Brian R. Wier, Dale McMorrow, Ani Khachatrian, Uppili S. Raghunathan, George N. Tzintzarov, Zachary E. Fleetwood, Moon-Kyu Cho, En Xia Zhang, Harold L. Hughes, Pauline Paki, Adrian Ildefonso, John D. Cressler, P.J. McMarr, Alvin J. Joseph, Mason T. Wachter, Delgermaa Nergui
Publikováno v:
IEEE Transactions on Nuclear Science. 65:399-406
The doping profile of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is modified to enhance inverse-mode (IM) device operation. Device improvements are presented in this paper, along with the impact the alterations have on the radia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d690500c30b80d11816879d8d61c5884
https://doi.org/10.1109/tns.2017.2782183
https://doi.org/10.1109/tns.2017.2782183
Autor:
Nelson E. Lourenco, Daniel M. Fleetwood, Zachary E. Fleetwood, Uppili S. Raghunathan, Adrian Ildefonso, En Xia Zhang, Anup P. Omprakash, Jeffrey A. Babcock, Adilson S. Cardoso, John D. Cressler, Rajarshi Mukhopadhyay, P.J. McMarr
Publikováno v:
IEEE Transactions on Nuclear Science. 64:277-284
Total ionizing dose (TID) effects are evaluated for a high-voltage (>30 V) complementary SiGe on SOI technology. Devices are irradiated with 10-keV X-rays at doses up to 5 Mrad(SiO2). The results depend strongly on collector-to-emitter bias, in both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e1cf6098e89812a2716531d31b58f51
https://doi.org/10.1109/tns.2016.2617201
https://doi.org/10.1109/tns.2016.2617201
Autor:
Guillaume Hubert, Nicolas Roche, Harold L. Hughes, Laurent Artola, A. Al Youssef, Ani Khachatrian, P.J. McMarr
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2539-2546
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32f74ce017b31af7e994d95305e8782c
https://doi.org/10.1109/tns.2015.2495101
https://doi.org/10.1109/tns.2015.2495101
Autor:
Stephen P. Buchner, Jeffrey H. Warner, Ani Khachatrian, Harold L. Hughes, P.J. McMarr, Nicolas J.-H. Roche, Dale McMorrow
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2732-2742
Circuit parameters and configuration are very important when studying the synergistic effects total dose/SET. We explore a method combining dynamic parameter measurement and spectrum analysis which lead to a better understanding of this complex pheno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24f0f651acbe97a4d976615471e47c77
https://doi.org/10.1109/tns.2015.2498309
https://doi.org/10.1109/tns.2015.2498309
Autor:
Eugene Chen, Jiwei Lu, S. Joseph Poon, Harold L. Hughes, Stuart A. Wolf, P.J. McMarr, Bradley D. Weaver
Publikováno v:
Journal of Materials Research. 30:1430-1439
Spintronics utilizes spin or magnetism to provide new ways to store and process information and is primarily associated with the utilization of spin polarized currents in memory and logic devices. With the end of silicon transistor technology in sigh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb7dcebe5f7bfb6bb9f7d3689dd516c7
https://doi.org/10.1557/jmr.2014.413
https://doi.org/10.1557/jmr.2014.413
Publikováno v:
IEEE Transactions on Nuclear Science. 61:2945-2950
Measured results and 3D TCAD simulations demonstrate that narrow, long channel PDSOI devices may exhibit a total-ionizing-dose response more like FDSOI devices, attributable to regions of lighter body doping and trapped charge in the isolation region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3193497a7c603bbef496556e94760046
https://doi.org/10.1109/tns.2014.2366725
https://doi.org/10.1109/tns.2014.2366725
Autor:
Harold L. Hughes, William Allen, Michael L. Alles, En Xia Zhang, Steve Gausepohl, P.J. McMarr, Everett Comfort, Martin Rodgers, Ji Ung Lee
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4483-4487
We measured the total ionizing dose response of gate-all-around silicon nanowire n- and pMOSFETs to x-ray doses up to 2Mrad(SiO2). We show that they are radiation hard, with no degradation in threshold voltage, off-state current, or subthreshold slop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::088401e17fb6d9c670a840414bd7bfa0
https://doi.org/10.1109/tns.2013.2280247
https://doi.org/10.1109/tns.2013.2280247
Autor:
A. Ong, E. Chen, S. Schafer, A. P. Chen, R. Shull, Harold L. Hughes, Tim Mewes, Marcus H. Mendenhall, Shu-Fan Cheng, P.J. McMarr, Konrad Bussmann, Robert A. Reed
Publikováno v:
IEEE Transactions on Nuclear Science. 59:3027-3033
Spin-transfer torque film stacks and devices having in-plane magnetization were irradiated using a cobalt-60 gamma source. Samples were also exposed to 2 MeV and 220 MeV protons. Measurements of magnetization vs. field, ferromagnetic resonance, and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42f8be61a889989c75eaf98c75e2a380
https://doi.org/10.1109/tns.2012.2223487
https://doi.org/10.1109/tns.2012.2223487
Autor:
Ewart W. Blackmore, T. Soares, Marty R. Shaneyfelt, Chenson Chen, Weilin Hu, Ronald D. Schrimpf, Harold L. Hughes, Brian Tyrrell, P. M. Gouker, P.J. McMarr, J.R. Schwank, J. R. Ahlbin, Richard D'Onofrio, Peter W. Wyatt, M.E. Nelson, K.J. Delikat, Stephanie L. Weeden-Wright
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2845-2854
Radiation effects are presented for the first time for vertically integrated 3 × 64-kb SOI SRAM circuits fabricated using the 3D process developed at MIT Lincoln Laboratory. Three fully-fabricated 2D circuit wafers are stacked using standard CMOS fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57e537fc4b8fb40fd815b508532bef0d
https://doi.org/10.1109/tns.2011.2172463
https://doi.org/10.1109/tns.2011.2172463
Autor:
Argyrios Malapanis, Cory D. Cress, Hassaram Bakhru, Ji Ung Lee, Harold L. Hughes, M. Fishman, P.J. McMarr, Everett Comfort
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2898-2903
We show that carbon nanotubes are robust under high H2+ ion fluences. We draw this conclusion by analyzing radiation-induced defects in reconfigurable single-walled carbon nanotube p-n diodes with partially suspended nanotubes. Our analysis show that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90bc286e7abc5c9653627394f9b1f6bb
https://doi.org/10.1109/tns.2011.2170708
https://doi.org/10.1109/tns.2011.2170708