Zobrazeno 1 - 10
of 37
pro vyhledávání: '"P.G. McMullin"'
Autor:
P.G. McMullin, Mchugh James Paul, D.L. Barrett, H.M. Hobgood, Wolfgang J. Choyke, Rowland C. Clarke, Richard H. Hopkins
Publikováno v:
Journal of Crystal Growth. 128:358-362
We have grown 6H-polytype SiC single crystal boules up to 60 mm in diameter by the physical vapor transport process at 2300 o C. [0001] oriented substrate wafers prepared from these undoped crystals exhibit resistivities of up to 10 5 Ω cm and etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb15310b7d9a764680d4865febf62cf6
https://doi.org/10.1016/0022-0248(93)90348-z
https://doi.org/10.1016/0022-0248(93)90348-z
Autor:
C.D. Brandt, T.J. Smith, Rowland C. Clarke, S. Sriram, R.R. Siergiej, A.A. Burk, Anant K. Agarwal, P.G. McMullin, H.M. Hobgood, P.A. Orphanos
Publikováno v:
52nd Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04ba92b001b952bf70ce5f930e82bf33
https://doi.org/10.1109/drc.1994.1009400
https://doi.org/10.1109/drc.1994.1009400
Autor:
H.M. Hobgood, Richard H. Hopkins, C.D. Brandt, P.G. McMullin, Rowland C. Clarke, R.R. Siergiej, Mchugh James Paul, G.W. Eldridge, D.L. Barrett, M.C. Driver, S. Sriram, A.A. Burk
Publikováno v:
15th Annual GaAs IC Symposium.
High-power density, temperature tolerant silicon carbide (SiC) electronics offer an exceptional opportunity to increase the performance and lower the cost of many existing and emerging military and commercial products. Surveillance and tactical radar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85c876cb5eedfe046a4dea3443b440d0
https://doi.org/10.1109/gaas.1993.394508
https://doi.org/10.1109/gaas.1993.394508
Autor:
R.R. Siergiej, L.B. Rowland, Richard H. Hopkins, C.D. Brandt, Marvin H. White, P.G. McMullin, S. Seshadri, Anant K. Agarwal, A.A. Burk
Publikováno v:
8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
A realistic performance projection of 4H-SiC UMOSFET structures based on electric field in the gate insulator consistent with long-term reliability of insulator is provided for the breakdown voltage in the range of 600 to 1500 V. The use of P/sup +/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bee8adb887205568fa1044c6bc5a31b
https://doi.org/10.1109/ispsd.1996.509462
https://doi.org/10.1109/ispsd.1996.509462
Autor:
H.M. Hobgood, Maurice H. Hanes, P.G. McMullin, A.K. Agarwal, J.R. Szedon, R.N. Thomas, Harvey C. Nathanson, Terence W O'keeffe, M.C. Driver, T.J. Smith
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
An advanced silicon technology is presented which is capable of producing highly reliable and affordable MMICs (monolithic microwave integrated circuits) integrated with high-speed CMOS digital functions as replacements for costly GaAs hybrids curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::453f9a4e59a430e3606df07b486541d7
https://doi.org/10.1109/iedm.1991.235329
https://doi.org/10.1109/iedm.1991.235329
Autor:
Maurice H. Hanes, R.R. Siergiej, J.R. Szedon, Harvey C. Nathanson, Terence W O'keeffe, T.J. Smith, M.C. Driver, R.N. Thomas, P.G. McMullin, H.M. Hobgood, Anant K. Agarwal
Publikováno v:
IEEE Electron Device Letters. 14:219-221
An improved silicon-on-insulator (SOI) approach offers devices and circuits operating to 10 GHz by providing formerly unattainable capabilities in bulk silicon: reduced junction-to-substrate capacitances in FETs and bipolar transistors, inherent elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1241b1fd5f569fe25cd7917361e617d
https://doi.org/10.1109/55.215173
https://doi.org/10.1109/55.215173
Autor:
Richard H. Hopkins, Marvin H. White, P.G. McMullin, R.R. Siergiej, S. Seshadri, Anant K. Agarwal, Albert A. Burk, C.D. Brandt, Larry B. Rowland
Publikováno v:
MRS Proceedings. 423
The long-term reliability of gate insulator under high field stress of either polarity presents a constraint on the highest electric field that can be tolerated in a 4H-SiC UMOSFET under on or off condition. A realistic performance projection of 41H-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f31e825b55bb472b0f7d552f5e4cb99a
https://doi.org/10.1557/proc-423-87
https://doi.org/10.1557/proc-423-87
Autor:
P.G. McMullin, P.A. Orphanos, Richard H. Hopkins, A.A. Burk, M.C. Driver, T.J. Smith, Rowland C. Clarke, S. Sriram, R.R. Siergiej, C.D. Brandt, H.M. Hobgood
Publikováno v:
IEEE Electron Device Letters. 15:458-459
State-of-the art SiC MESFET's showing a record high f/sub max/ of 26 GHz and RF gain of 8.5 dB at 10 GHz are described in this paper. These results were obtained by using high-resistivity SiC substrates for the first time to minimize substrate parasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a54c590fcdcea7a0d9e86a2728af7825
https://doi.org/10.1109/55.334666
https://doi.org/10.1109/55.334666
Publikováno v:
IEEE Transactions on Electron Devices. 39:2666
Summary form only given. The authors describe record-setting 5-GHz SiC MESFET performance and the effects of device design on achieving these results. Bulk growth of 6H-SiC was performed using a physical vapor transport process, and the resultant und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9944bf6d5ab93d6a9a96337694a308f
https://doi.org/10.1109/16.163535
https://doi.org/10.1109/16.163535
Publikováno v:
Solid-State Electronics. 23:415-422
The effect of Ti, Cu and Fe on silicon solar cells has been investigated. Ti severely degrades cell performance above a concentration of 10 11 cm −3 . The presence of 2 × 10 14 cm −3 Ti results in a 63% loss in cell performance and more than an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b53fbf63104190673f5427e39317137c
https://doi.org/10.1016/0038-1101(80)90076-3
https://doi.org/10.1016/0038-1101(80)90076-3