Zobrazeno 1 - 10
of 111
pro vyhledávání: '"P.G. Litovchenko"'
Autor:
R.M. Vernydub, O.I. Kyrylenko, O.V. Konoreva, Ya.M. Olikh, P.G. Litovchenko, Yu.V. Pavlovskyy, P. Potera, V.P. Tartachnyk
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 2, Pp 201-207 (2020)
Commercial orange and yellow GaAs1–хPх LEDs were irradiated by 2 MeV electrons with fluences of 1014…2·1016 сm–2, and their electrophysical characteristics were investigated in the current and voltage generators modes. It has been shown tha
Externí odkaz:
https://doaj.org/article/cdff775d46d542338be4037157fbf45f
Autor:
R.M. Vernydub, O.V. Konoreva, M.M. Filonenko, O.I. Kyrylenko, D.P. Stratilat, P.G. Litovchenko, V.P. Tartachnyk
Publikováno v:
Âderna Fìzika ta Energetika, Vol 22, Iss 1, Pp 56-61 (2021)
The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid solutions are considered. The results of studies of the effect of electron irradiation (E = 2 MeV, F = 3 · 1014 ÷ 2.6 · 1016 cm-2) on the main ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27454d6a6d93f9dde0a97f0ec3ddbe85
http://jnpae.kinr.kiev.ua/22.1/Articles_PDF/jnpae-2021-22-0056-Vernydub.pdf
http://jnpae.kinr.kiev.ua/22.1/Articles_PDF/jnpae-2021-22-0056-Vernydub.pdf
Autor:
V.P. Tartachnyk, Ya. M. Olikh, P.G. Litovchenko, O.V. Konoreva, Yu.V. Pavlovskyy, O.I. Kyrylenko, P. Potera, R.M. Vernydub
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 2, Pp 201-207 (2020)
Commercial orange and yellow GaAs1–хPх LEDs were irradiated by 2 MeV electrons with fluences of 1014…2·1016 сm–2, and their electrophysical characteristics were investigated in the current and voltage generators modes. It has been shown tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbfb80f2b267dd2104f16f7886aaa951
http://journal-spqeo.org.ua/n2_2020/P201-207abstr.html
http://journal-spqeo.org.ua/n2_2020/P201-207abstr.html
Autor:
O.V. Konoreva, V.M. Popov, P.G. Litovchenko, V.P. Tartachnyk, O. I. Radkevych, V.V. Shlapatska
Publikováno v:
Âderna Fìzika ta Energetika, Vol 20, Iss 2, Pp 164-169 (2019)
Light emitting diodes based on gallium arsenide-phosphide solid solutions were studied. Negative differential resistance regions were identified at lower temperatures T ≤ 130 K. Irradiation of diodes by electrons (E = 2 MeV) leads to the increase i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b405a3059d6b85f545da5fda635074e
https://doi.org/10.15407/jnpae2019.02.164
https://doi.org/10.15407/jnpae2019.02.164
Autor:
E. Koshchiy, B. Erdemchimeg, P.G. Litovchenko, G. A. Kononenko, Yu. G. Teterev, A. N. Vorontzov, A. G. Artukh, D. A. Kislukha, A. G. Foshchan, Yu. N. Pavlenko, V. E. Kovtun, S. A. Klygin, V. V. Ostashko, Yu. M. Sereda, G. Kaminski
Publikováno v:
Instruments and Experimental Techniques. 54:668-681
The basic ion-optical characteristics of the COMBAS fragment separator are analyzed. The momentum distributions of radioactive 6He, 8He, and 9Li nuclei obtained in the reaction 11B (33 A MeV, where A is the mass number of a particle) + 9Be (332.6 mg/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9439d6857c5101d9c776e906f264ec02
https://doi.org/10.1134/s0020441211050022
https://doi.org/10.1134/s0020441211050022
Autor:
A. A. Druzhinin, V. M. Tsmots, N. T. Pavlovska, Yu.V. Pavlovskyy, A. Ya. Karpenko, I. P. Ostrovskyy, Yu. Khoverko, P.G. Litovchenko
Publikováno v:
Sensor Electronics and Microsystem Technologies; Том 7, № 4 (2010); 5-8
Сенсорная электроника и микросистемные технологии; Том 7, № 4 (2010); 5-8
Сенсорна електроніка і мікросистемні технології; Том 7, № 4 (2010); 5-8
Сенсорная электроника и микросистемные технологии; Том 7, № 4 (2010); 5-8
Сенсорна електроніка і мікросистемні технології; Том 7, № 4 (2010); 5-8
The impact of proton irradiation and high magnetic field on the electroconductivity and magnetoresistance of Si1-xGex (õ = 0,03) whiskers with resistance of ρ = 0,008–0,025 Ohm∙cm in the temperature range of 4,2–300 Ê.is studied. It is fount
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13e68340b87834802d6f2c5405b48cac
https://doi.org/10.18524/1815-7459.2010.4.116161
https://doi.org/10.18524/1815-7459.2010.4.116161
Autor:
Yu. V. Pavlovskyy, I. S. Pankiv, O. P. Litovchenko, M. M. Luchkevych, P.G. Litovchenko, V. M. Tsmots
Publikováno v:
Sensor Electronics and Microsystem Technologies. 6:66-69
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1659e9d9e0e34d5965aa3aa7a50d8e4
https://doi.org/10.18524/1815-7459.2009.3.115947
https://doi.org/10.18524/1815-7459.2009.3.115947
Autor:
V. Tartachnyk, M. B. Pinkovska, A.P. Litovchenko, O.V. Konoreva, M. Drahomanov, V. Opilat, P.G. Litovchenko
Publikováno v:
Semiconductor physics, quantum electronics and optoelectronics. 12:276-279
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46c31837083a821c672b107adb9521e8
https://doi.org/10.15407/spqeo12.03.276
https://doi.org/10.15407/spqeo12.03.276
Autor:
Vladimir Cindro, M. Mikelsen, Edouard Monakhov, A. Groza, M. I. Starchik, V. K. Dubovoy, V. Lastovetsky, L.I. Barabash, G.-F. Dalla Betta, A.P. Litovchenko, Piero Giubilato, P.G. Litovchenko, V. Khomenkov, D. Bisello, Nicola Zorzi, Maurizio Boscardin, A. Candelori, Robert R. Rando, W. Wahl, Bengt Gunnar Svensson
Publikováno v:
Fondazione Bruno Kessler-IRIS
Radiation hardness of planar detectors processed from pre-irradiated and thermo-annealed n-type FZ silicon substrates, and standard FZ as a reference, was studied. The high purity n-Si wafers with carrier concentration 4.8×10 11 cm −3 were pre-irr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f81c85faae514a703878581de8ea3567
https://doi.org/10.1016/j.nima.2006.05.207
https://doi.org/10.1016/j.nima.2006.05.207
Autor:
A.P. Litovchenko, A. A. Groza, Piero Giubilato, V. Khomenkov, M. I. Starchik, Andrea Candelori, P.G. Litovchenko, Dario Bisello, Riccardo Rando
Publikováno v:
Solid State Phenomena. :199-204
The oxygen precipitation kinetic in CZ silicon irradiated by reactor neutrons and high energy protons (50 MeV) was studied by IR spectroscopy technique. At an early annealing stage (1000°C) dissolution of grown oxide microprecipitates was observed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a89de7eb74b8fd2f63ce86d651585f1
https://doi.org/10.4028/www.scientific.net/ssp.108-109.199
https://doi.org/10.4028/www.scientific.net/ssp.108-109.199