Zobrazeno 1 - 10
of 34
pro vyhledávání: '"P.F. Baude"'
Autor:
G. E. Hofler, G. Meis-Haugen, J.M. DePuydt, S. Guha, Michael A. Haase, B. J. Wu, J. Qiu, M.S. Hagedorn, H. Cheng, P.F. Baude
Publikováno v:
Journal of Crystal Growth. 138:667-676
Buried-ridge II–VI laser diodes operating at 511 nm at room temperature were fabricated from separate-confinement heterostructures. The layers consisted of a pseudomorphic CdZnSe quantum well and lattice-matched ZnSSe light-guiding and MgZnSSe clad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c8f4c67d31155f8480493734148835a
https://doi.org/10.1016/0022-0248(94)90889-3
https://doi.org/10.1016/0022-0248(94)90889-3
Autor:
J.M. DePuydt, G. E. Hofler, Supratik Guha, H. Cheng, B. J. Wu, M.S. Hagedorn, P.F. Baude, M. A. Haase, J. Qiu
Publikováno v:
51st Annual Device Research Conference.
Summary form only given. An attempt is being made to develop short wavelength (green and blue) laser diodes with performance suitable for use in optical data storage systems. Buried-ridge laser diodes operating in the blue-green ( lambda =511 nm) are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96405b6fab3a455dc72c666ae4906018
https://doi.org/10.1109/drc.1993.1009630
https://doi.org/10.1109/drc.1993.1009630
Publikováno v:
Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC..
In this paper, we present a pentacene-based eight-bit radio frequency identification (RFID) transponder circuit. The circuits are patterned entirely with polymeric shadow masks and operate at carrier frequencies greater than 1 MHz. The thin film inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17f828b932bc51afd647ccbda9606de7
https://doi.org/10.1109/drc.2004.1367878
https://doi.org/10.1109/drc.2004.1367878
Publikováno v:
IEEE International Electron Devices Meeting 2003.
We present pentacene-based radio frequency identification (RFID) transponder circuitry, patterned entirely using flexible shadow-masks, and operating at RF frequencies greater than 1 MHz. The circuits, fabricated on glass substrates, were powered usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5fb42d3b089280b2bc0ba529c96c737
https://doi.org/10.1109/iedm.2003.1269238
https://doi.org/10.1109/iedm.2003.1269238
Autor:
D.C. Grillo, P.F. Baude, T.J. Miller, K.K. Law, G.M. Haugen, M.A. Haase, M. Buijs, W. Haberem, K. Shahzad
Publikováno v:
1996 54th Annual Device Research Conference Digest.
Since the first demonstrations of II-VI laser diodes, researchers have been working towards long lifetime room temperature CW devices. In this paper, we report improved room temperature CW lifetime (2.15 minutes) and device performance characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3c59850e6b057bd7202bdc7ec0db0c3
https://doi.org/10.1109/drc.1996.546331
https://doi.org/10.1109/drc.1996.546331
Autor:
M. Pashley, K.W. Haberern, J. Pettruzello, K. K. Law, T. J. Miller, Supratik Guha, Thomas M. Marshall, P.F. Baude, M. Buijs, G. Meis-Haugen, Michael A. Haase
Publikováno v:
LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings.
Great strides have been made in the area of Il-VI based short wavelength laser diodes since the first demonstration of pulsed blue-green lasers by 3M Company in 1991. These advances have been primarily due to a greater understanding of the material g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::921b689aa7f120bef26bc94642b015b5
https://doi.org/10.1109/leos.1995.484631
https://doi.org/10.1109/leos.1995.484631
Autor:
P.F. Baude, M. A. Haase, Kevin W. Haberern, Maarten Buijs, Sharon J. Flamholtz, Kwok Keung Law, J. J. L. Horikx, G. M. Haugen, Thomas J. Miller
Publikováno v:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared.
We have demonstrated the feasibility of reading a high density Digital Versatile Disc using a green ZnSe based laser as the light source. In order to achieve this, high quality optical and electrical properties are required from the laser. We fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f0f41292b3d075c5d2de2347bada7bc
https://doi.org/10.1117/12.273777
https://doi.org/10.1117/12.273777
Publikováno v:
Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09f6707a90036a9650811215d76b3f2a
https://doi.org/10.7567/ssdm.1997.c-6-1
https://doi.org/10.7567/ssdm.1997.c-6-1
Publikováno v:
Electronics Letters. 32:345
Room temperature continuous wave operation of CdZnSSe/ZnSSe quantum well laser diodes based on wide-gap II-VI semiconductors with lifetimes >3 h has been demonstrated. The density of stacking faults and threading dislocations present inside the laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0552790f3aa951f061684b2846222d0a
https://doi.org/10.1049/el:19960249
https://doi.org/10.1049/el:19960249
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