Zobrazeno 1 - 10
of 49
pro vyhledávání: '"P.E. Shepeliavyi"'
Autor:
I.Z. Indutnyi, Yu.V. Ushenin, D. Hegemann, M. Vandenbossche, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukaniuk, P.M. Lytvyn, R.V. Khrystosenko
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 3, Pp 362-368 (2017)
The sensitivity of surface plasmon resonance (SPR) sensors operating in the Kretschmann configuration was investigated using Au SPR chips with a nano-grating surface functionalized via deposition of a-C:H:O plasma polymer films. The surface of the ch
Externí odkaz:
https://doaj.org/article/f5fc1c159d5e46bcae6c8799f30b31f4
Autor:
I. Z. Indutnyi, M.V. Lukaniuk, A. A. Korchovyi, V.I. Mynko, R. V. Khrystosenko, Yu.V. Ushenin, P.E. Shepeliavyi
Publikováno v:
Ukrainian Journal of Physics; Vol. 62 No. 5 (2017); 365
Український фізичний журнал; Том 62 № 5 (2017); 365
Український фізичний журнал; Том 62 № 5 (2017); 365
The enhancement of the sensitivity of a surface-plasmon-resonance refractometer by forming a periodic relief in the form of a grating with a submicron period on the surface of an Au chip has been studied. Periodic reliefs with the spatial frequency v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29a441b70a2ca39778124a51f742d833
https://doi.org/10.15407/ujpe62.05.0365
https://doi.org/10.15407/ujpe62.05.0365
Akademický článek
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Autor:
A. O. Goushcha, V. Melnyk, Viktor Dan’ko, P.E. Shepeliavyi, A. G. Kuzmich, V. B. Neimash, Volodymyr O. Yukhymchuk
Publikováno v:
Scopus-Elsevier
Ukrainian Journal of Physics; Vol. 59 No. 12 (2014); 1168
Український фізичний журнал; Том 59 № 12 (2014); 1168
Ukrainian Journal of Physics; Vol. 59 No. 12 (2014); 1168
Український фізичний журнал; Том 59 № 12 (2014); 1168
Formation of Si nanocrystals in amorphous Si-metallic Sn film structures has been studied experimentally, by using the Auger spectroscopy, electron microscopy, and Raman scattering methods. The results are analyzed in comparison with recent results o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b9bcc5817ac270d27e25c5eccc795cd
https://doi.org/10.15407/ujpe59.12.1168
https://doi.org/10.15407/ujpe59.12.1168
Akademický článek
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Autor:
P.E. Shepeliavyi, Igor Lisovskyy, A. Szekeres, Attila Tóth, S. Zlobin, E. Vlaikova, Tivadar Lohner
Publikováno v:
Solid State Phenomena. 159:149-152
Studies of oblique deposited nanostructured SiOx films by ellipsometric and IR spectroscopies are presented, as additional information is obtained by scanning electron microscopy (SEM). The films were deposited onto Si substrates under a 75° inciden
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a935f5027ae0797e22f2a01faea9eda
https://doi.org/10.4028/www.scientific.net/ssp.159.149
https://doi.org/10.4028/www.scientific.net/ssp.159.149
Akademický článek
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Autor:
P.E. Shepeliavyi, A. Szekeres, Ágnes Cziráki, E. Vlaikova, Tivadar Lohner, S. Zlobin, Peter Petrik
Publikováno v:
ECS Transactions. 25:379-384
Silicon oxide films, vacuum evaporated and annealed in Ar atmosphere at a temperature of 1000 and 1100ºC have been studied by multiple-angle spectroscopic ellipsometry (SE) in the spectral range of 280-820 nm. The thickness, complex refractive index
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a90aced0de2187b79c3d223fcfb5579
https://doi.org/10.1149/1.3204428
https://doi.org/10.1149/1.3204428
Autor:
G. Huhn, Tivadar Lohner, E. Vlaikova, I. Z. Indutnyy, A. Szekeres, Peter Petrik, P.E. Shepeliavyi, I. Lisovskyy, S. Zlobin, Károly Havancsák
Publikováno v:
Vacuum. 84:115-118
In this work we present results on the ellipsometric study of SiO x films in the spectral range of 280–820 nm. The films were deposited by vacuum thermal evaporation of SiO onto Si substrates heated at 150 °C. To stimulate the formation of silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29d879dee9b9e1b6e520aeb2f28cce6b
https://doi.org/10.1016/j.vacuum.2009.05.016
https://doi.org/10.1016/j.vacuum.2009.05.016
Publikováno v:
physica status solidi (b). 245:2756-2760
The effect of enhanced hydrostatic pressure (HP, (10–12) × 108 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450–1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c15027cf67906713c37373d0c73ec73
https://doi.org/10.1002/pssb.200844049
https://doi.org/10.1002/pssb.200844049