Zobrazeno 1 - 10
of 38
pro vyhledávání: '"P.E. Oliver"'
Publikováno v:
Chemical Vapor Deposition. :183-186
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b1491694fb4f567b339557f6a5f02fe
https://doi.org/10.1002/(sici)1521-3862(199810)04:05<183::aid-cvde183>3.0.co
https://doi.org/10.1002/(sici)1521-3862(199810)04:05<183::aid-cvde183>3.0.co
Autor:
N.A. Smith, A.D. Pitt, I. Rex Harris, Michael C. L. Ward, Matthew E. G. Tilsley, John M. Keen, P.E. Oliver, Peter J. Wright, B. Cockayne, C. L. Reeves, P.A. Lane
Publikováno v:
Chemical Vapor Deposition. 3:97-101
Thin films of elemental iron and nickel, plus a wide composition range of iron-nickel alloys, have been deposited by atmospheric pressure metal organic chemical vapor deposition at a growth temperature of 200°C, using iron pentacarbonyl and nickel t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3d1e7a574ebeca531596f689d500edf
https://doi.org/10.1002/cvde.19970030208
https://doi.org/10.1002/cvde.19970030208
Publikováno v:
Journal of Crystal Growth. 148:261-267
Thin polycrystalline films of the complex ferromagnetic ternary alloys Fe 3 Ga 2- x As x have been grown for the first time by atmospheric pressure metalorganic chemical vapour deposition. Initial data on the crystal structure and the magnetic proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abdb9f015f3eb173230f6c92b1d42520
https://doi.org/10.1016/0022-0248(94)00970-8
https://doi.org/10.1016/0022-0248(94)00970-8
Autor:
N.A. Smith, Peter J. Wright, I.R. Harris, P.A. Lane, B. Cockayne, P.E. Oliver, M.E.G. Tilsley
Publikováno v:
Journal of Crystal Growth. 153:25-30
Thin films of the binary and ternary ferromagnetic materials MnSb and MnAs1-xSbx (0 < x < 0.08) have been grown for the first time by atmospheric pressure metalorganic chemical vapour deposition using the precursors arsine, tricarbonylmethylcyclopent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be86046dae6e7beef1f6ea03e2f7cf88
https://doi.org/10.1016/s0022-0248(08)80144-3
https://doi.org/10.1016/s0022-0248(08)80144-3
Autor:
I.R. Harris, B. Cockayne, Peter J. Wright, P.A. Lane, N.A. Smith, P.E. Oliver, M.E.G. Tilsley
Publikováno v:
Journal of Crystal Growth. 143:237-242
Thin films of the ferromagnetic material manganese arsenide (MnAs) have been grown for the first time by atmospheric pressure metalorganic chemical vapour deposition (MOCVD), using tricarbonylmethylcyclopentadienyl manganese (TCM) and arsine. A detai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8006aa455d25fc0edb0689c8f7192c62
https://doi.org/10.1016/0022-0248(94)90062-0
https://doi.org/10.1016/0022-0248(94)90062-0
Publikováno v:
Journal of Crystal Growth. 108:525-533
It is shown that pyridine, when introduced into the gas phase, is effective in controlling the prereaction between the group II alkyl precursur and the group VI hydride during the metalorganic chemical vapour deposition (MOCVD) of ZnSe. During the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c442c317a8bb28b4fb2c9e8272bb9777
https://doi.org/10.1016/0022-0248(91)90230-3
https://doi.org/10.1016/0022-0248(91)90230-3
Publikováno v:
Journal of Crystal Growth. 100:395-404
Epitaxial layers of AlxGa1−xAs have been grown using a variety of different aluminium alkyls, in conjunction with trimethylgallium and arsine. These compounds, precursors based on trimethyl and triethylaluminium, have been made, purified, character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d10c9ff71a12eaefecc6c1d64dd1d733
https://doi.org/10.1016/0022-0248(90)90237-f
https://doi.org/10.1016/0022-0248(90)90237-f
Autor:
Anthony C. Jones, Peter J. Wright, Phillip Reeve Jacobs, C.C. Button, B. Cockayne, P.E. Oliver, J.S. Roberts, S.A. Rushworth
Publikováno v:
Journal of Crystal Growth. 96:769-773
Epitaxial Al x Ga 1- x As has been grown using tertiarybutyldimethylaluminium (Bu t AlMe 2 ) 2 as an alternative to Me 3 Al. The grown layers are of good optical quality although low temperature PL data indicates that carbon is a contaminant in the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d488855303051fdd0d60bde82a508a1
https://doi.org/10.1016/0022-0248(89)90634-9
https://doi.org/10.1016/0022-0248(89)90634-9
Publikováno v:
Journal of Crystal Growth. 68:461-465
High speed MOCVD grown PIN photodiodes are described. Growth, fabrication, packaging and testing details are presented. It is shown that the frequency response of large area devices is accurately described by a simple RC model. Smaller geometry devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f27c4d2903ed88d3810412e22adbf6b
https://doi.org/10.1016/0022-0248(84)90450-0
https://doi.org/10.1016/0022-0248(84)90450-0
Publikováno v:
Journal of Crystal Growth. 55:183-191
In developing MOCVD GaAs/GaAlAs technology for photocathode applications, the minority carrier diffusion length ( L ) of p-type GaAs has been studied. Homo- and heteroepitaxial GaAs with hole concentrations in the range 1 × 10 15 −8 × 10 19 cm -3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d69c68fe5b4e12a10614992ed5cdcf9d
https://doi.org/10.1016/0022-0248(81)90286-4
https://doi.org/10.1016/0022-0248(81)90286-4