Zobrazeno 1 - 10
of 165
pro vyhledávání: '"P.E. Dodd"'
Autor:
P.E. Dodd
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 5:343-357
This paper reviews techniques for physics-based device-level simulation of single-event effects (SEEs) in Si microelectronic devices and integrated circuits. Issues for device modeling of SEE are discussed in the context of providing physical insight
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35516c575baded2c0a5a71d64b14fafa
https://doi.org/10.1109/tdmr.2005.855826
https://doi.org/10.1109/tdmr.2005.855826
Publikováno v:
Materials Science Forum. :427-432
The nuclear microprobe has proven to be a useful tool in radiation testing of integrated circuits. This paper reviews single event upset (SEU) and ion beam induced charge collection (IBICC) imaging techniques, with special attention to damage-depende
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63e577a0cc7b2ae48b46054bb0da6c3e
https://doi.org/10.4028/www.scientific.net/msf.248-249.427
https://doi.org/10.4028/www.scientific.net/msf.248-249.427
Publikováno v:
51st Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5348a35c14f561a3252dccd24c556ab
https://doi.org/10.1109/drc.1993.1009621
https://doi.org/10.1109/drc.1993.1009621
Publikováno v:
50th Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b170e6921324af89f27d5b78d418b0f
https://doi.org/10.1109/drc.1992.671886
https://doi.org/10.1109/drc.1992.671886
Publikováno v:
IEEE Electron Device Letters. 17:166-168
We demonstrate np/sup +/n InAs bipolar transistors that operate under room temperature and cryogenic conditions. InAs transistors on an InP substrate were characterized as a function of temperature and exhibited good room temperature and low temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58e761b5d8536eda44e7bd275eb0022e
https://doi.org/10.1109/55.485162
https://doi.org/10.1109/55.485162
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
Scanning capacitance microscopy was used to study the cross section of an operating p-channel MOSFET. We discuss the novel test structure design and the modifications to the SCM hardware that enabled us to perform SCM while applying dc bias voltages
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::334d7ac529f50f949ba2c9685c802a59
https://doi.org/10.1109/iedm.1999.824279
https://doi.org/10.1109/iedm.1999.824279
Publikováno v:
Proceedings of the 1988 Bipolar Circuits and Technology Meeting.
A n-p-n bipolar transistor that will be comparable in performance to conventional heterostructure bipolar transistors, but will be far easier to manufacture, is described. The device features an n-GaAs:p/sup +/-GaAs emitter-base junction and makes us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3703f94f16a5ace5c21a5aa9d4e56d5
https://doi.org/10.1109/bipol.1988.51039
https://doi.org/10.1109/bipol.1988.51039
Autor:
T.B. Stellwag, Mark Lundstrom, R.F. Pierret, Eli Yablonovitch, Michael R. Melloch, P.E. Dodd, M. S. Carpenter, T. J. Gmitter
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
Perimeter recombination currents have been experimentally characterized on GaAs p/n heteroface diodes and solar cells with areas ranging from 2.5*10/sup -5/ to 0.25 cm/sup 2/. Under 1-sun operation at the maximum power point, measurements show that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d136c366c0782816d5ce5fde3966c003
https://doi.org/10.1109/pvsc.1990.111663
https://doi.org/10.1109/pvsc.1990.111663
Publikováno v:
IEEE Electron Device Letters. 12:629-631
GaAs pseudo-heterojunction bipolar transistors (HBTs) that make use of the difference in effective bandgap narrowing in n- and p-type GaAs have been fabricated and characterized. A current gain enhancement by a factor greater than 20 is observed as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54064d5ecc7ec55bdebbf8d43709bf3b
https://doi.org/10.1109/55.119220
https://doi.org/10.1109/55.119220
