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pro vyhledávání: '"P.E. Cottrell"'
Akademický článek
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Akademický článek
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Autor:
E.M. Buturla, D.P. Foty, Massimo V. Fischetti, J.B. Johnson, Stephen S. Furkay, James A. Slinkman, Steven E. Laux, K. Varahramyan, J. A. Mandelman, A.W. Strong, T.D. Linton, Daniel C. Cole, Orest Bula, F. Pileggi, D. Katcoff, J.W. Park, H.G. Lustig, P.E. Cottrell
Publikováno v:
Solid-State Electronics. 33:591-623
An overview is presented on the types of problems encountered in semiconductor technology development that are actively studied today via simulation methods. Most of the simulation examples presented here are ones that have been explicitly used in ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a5597bca7ea246fe176fe6ddc51428a
https://doi.org/10.1016/0038-1101(90)90173-c
https://doi.org/10.1016/0038-1101(90)90173-c
Autor:
J.G. Massey, P.E. Cottrell, Jed H. Rankin, Thomas G. Ference, S.H. Lo, Steven W. Mittl, William F. Clark
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
This paper reports up to 100/spl times/ improvement in hot-electron lifetime in high-performance CMOS, without impacting process cycle time or thermal budget. This was achieved by combining deuterated-film processing with standard pre-metal and post-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c721484097abc8176117875dc9fa93d
https://doi.org/10.1109/iedm.1999.823853
https://doi.org/10.1109/iedm.1999.823853
Publikováno v:
Proceedings on Bipolar Circuits and Technology Meeting.
The combination of velocity saturation, and a valence band offset at the base-collector junction reduces the performance of double heterojunction bipolar transistors at high injection levels because of the formation of a retarding potential barrier.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a50f4ee208c80e37d67695c353fe8dea
https://doi.org/10.1109/bipol.1990.171160
https://doi.org/10.1109/bipol.1990.171160
Autor:
P.E. Cottrell, Zhiping Yu
Publikováno v:
IEEE Electron Device Letters. 11:431-433
The effects of velocity saturation on the unity gain-bandwidth product f/sub t/ and transconductance g/sub m/ of n-p-n and p-n-p heterojunction bipolar transistors (HBTs) with Ge/sub x/Si/sub 1-x/ bases are described and simulated. For the n-p-n devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e8db4bec8054a704b9e9949f46cb5ef
https://doi.org/10.1109/55.62986
https://doi.org/10.1109/55.62986
Publikováno v:
IEEE Journal of Solid-State Circuits. 15:694-704
This paper presents a channel hot-electron degradation model that is valid for both fixed and time-varying bias conditions. A simple relationship has been derived for the practical case of identical, repetitive pulses. The model uses gate current mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::232933b626737373d555edf8089e09d5
https://doi.org/10.1109/jssc.1980.1051457
https://doi.org/10.1109/jssc.1980.1051457
Publikováno v:
IEEE Journal of Solid-State Circuits. 14:442-455
The authors discuss the emission of both substrate and channel hot electrons from the silicon into the gate insulator of n-channel IGFETs. In each case the discussion begins with a physical model to elucidate the many parametric dependencies. The eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aee977e463c2d7ac4ed54fe50301d1b1
https://doi.org/10.1109/jssc.1979.1051196
https://doi.org/10.1109/jssc.1979.1051196
Autor:
Roy Edwin Scheuerlein, R.L. Mohler, E.J. Sprogis, Wendell P. Noble, B.J. Machesney, W.J. Craig, S. Dash, D.L. Critchlow, Nicky Chau-Chun Lu, P.E. Cottrell, L.M. Terman, R.M. Parent, Tak H. Ning
Publikováno v:
IEEE Journal of Solid-State Circuits. 21:627-634
A (dynamic random-access memory) DRAM cell using a trench capacitor with a grounded substrate plate has been demonstrated, fabricated of functional fully decoded 64K arrays. The cell array is located inside the well and the trench capacitor extends f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc175072227ea20573ce4e170f83af53
https://doi.org/10.1109/jssc.1986.1052587
https://doi.org/10.1109/jssc.1986.1052587
Publikováno v:
Solid-State Electronics. 18:1-12
The behavior of IMPATT oscillators with enhanced leakage current has been experimentally evaluated by irradiating operating diodes with transient ionizing radiation. Leakage current was induced in diffused junction GaAs and silicon X-band IMPATT diod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::038e4369da9f7208ec5019ebca528e61
https://doi.org/10.1016/0038-1101(75)90066-0
https://doi.org/10.1016/0038-1101(75)90066-0