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pro vyhledávání: '"P.E. Burrows"'
Publikováno v:
2007 Cleantech Conference and Trade Show Cleantech 2007 ISBN: 9780429187469
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::981e9b83c6836443b7e04d1757a8764b
https://doi.org/10.1201/9780429187469-51
https://doi.org/10.1201/9780429187469-51
Akademický článek
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Publikováno v:
Journal of Vascular and Interventional Radiology. 26:S175-S176
Autor:
S.R. Forrest, P.E. Burrows
Publikováno v:
Supramolecular Science. 4:127-139
We compare the ultrahigh vacuum growth of several different archetype organic molecular compounds on a variety of substrates, and find that the resulting thin films can form epitaxial, van der Waals epitaxial (vdWE) or quasi-epitaxial (QE) structures
Publikováno v:
Physica B: Condensed Matter. 221:145-151
We describe an X-ray diffraction study of the epitaxy of organic thin films on well-defined inorganic substrates. These include alkyl-thiol monolayers (“self-assembled monolayers”) and films of PTCDA (3, 4, 9, 10 perylenetetracarboxylic dianhydri
Publikováno v:
Journal of Crystal Growth. 152:65-72
We use reflection high energy electron diffraction and grazing incidence X-ray diffraction to study films of the archetype crystalline organic material: 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) grown on Au(111) by organic molecular beam d
Publikováno v:
IEEE Photonics Technology Letters. 9:365-367
We describe a novel, integrated organic-inorganic waveguide/photodetector with an internal quantum efficiency of (53/spl plusmn/15%). Low-loss (2.7/spl plusmn/0.3 dB/cm at /spl lambda/=1.064 /spl mu/m for 10-/spl mu/m wide waveguides) crystalline org
Autor:
P.E. Burrows, S.R. Forrest
Publikováno v:
IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology.
Publikováno v:
Applied Physics Letters. 69:2959-2961
We demonstrate an integrated, two‐color organic light‐emitting device for flat‐panel display applications. The device utilizes a unique stacked pixel architecture which allows for independent tuning of color and intensity. Each of the two addre
Publikováno v:
IEEE Photonics Technology Letters. 7:1162-1164
We demonstrate for the first time a 1.3-/spl mu/m wavelength optoelectronic InGaAsP-InP smart pixel switching circuit using monolithically integrated p-i-n photodiodes and heterojunction bipolar transistors, along with surface-mounted folded-cavity s