Zobrazeno 1 - 10
of 113
pro vyhledávání: '"P.E Schmidt"'
Publikováno v:
Thin Solid Films. :611-614
The focus of this work is to report on the preparation of MgO buffer layers on GaAs. Successful deposition of buffer layer materials for the YBa2Cu3Ox high-temperature superconductor has been obtained. MgO layers were grown by pulsed DC magnetron spu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40c7e87cd14df10d775f4d15d1212b30
https://doi.org/10.1016/s0040-6090(97)00434-3
https://doi.org/10.1016/s0040-6090(97)00434-3
Publikováno v:
Solid-State Electronics. 36:631-637
We present rigorous simple closed-form formulas, valid for all bias conditions, for the transconductances of the front and back gates of the long-channel silicon-on-insulator MOSFET. These formulas are obtained from the recent single integral express
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39677c0bcf175f0f34dcc9586bf68001
https://doi.org/10.1016/0038-1101(93)90276-v
https://doi.org/10.1016/0038-1101(93)90276-v
Publikováno v:
Solid-State Electronics. 35:1291-1298
Based on the procedure of Pierret and Shields [1, Solid-St. Electron. 26 , 143, 1983] for the long-channel bulk MOSFET, a new single-integral expression is obtained to describe the current-voltage characteristics for the silicon-on-insulator (SOI) MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b5b4283742431e35a4c8193727ec868
https://doi.org/10.1016/0038-1101(92)90164-8
https://doi.org/10.1016/0038-1101(92)90164-8
Publikováno v:
Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
The authors report a pseudomorphic semiconductor-insulator-semiconductor field-effect transistor (PM-SISFET) that uses a thin layer of undoped GaInAs instead of GaAs as the channel-forming layer. The device consists of an undoped AlGaAs barrier layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b42055398fdacded023f5d79084ff3f
https://doi.org/10.1109/cornel.1989.79824
https://doi.org/10.1109/cornel.1989.79824
Publikováno v:
Proceedings of IEEE-SP International Symposium on Time- Frequency and Time-Scale Analysis.
The 1/f noise observed in MOSFET is widely believed to originate from a uniform distribution of traps in the gate oxide. The resulting power spectral density, the 1/f spectrum, can be seen as a superposition of Lorentzian spectra. In this paper, we d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5443a6e8d54e05d16871406a7752f4bb
https://doi.org/10.1109/tfsa.1994.467338
https://doi.org/10.1109/tfsa.1994.467338
Publikováno v:
Applied Physics Letters. 58:367-369
Two pseudomorphic InxGa1−xAs/Al0.4Ga0.6As/GaAs semiconductor/insulator/ semiconductor heterostructures (PM‐SIS) with indium mole fractions x=0.15 and 0.25 were investigated and compared to a conventional GaAs/AlGaAs/GaAs SIS structure by means of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e297bb41272866fec18b51e55ce0c249
https://doi.org/10.1063/1.104636
https://doi.org/10.1063/1.104636
Publikováno v:
Molecular Plant-Microbe Interactions. 7:384
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::243f139c1eddf8b8f9009dc2bf78d7a3
https://doi.org/10.1094/mpmi-7-0384
https://doi.org/10.1094/mpmi-7-0384
Autor:
P.E. Schmidt
Publikováno v:
Materials Research Bulletin. 27:531
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48da9f144ac6e969b85c4c8a7b31e1c8
https://doi.org/10.1016/0025-5408(92)90032-u
https://doi.org/10.1016/0025-5408(92)90032-u
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