Zobrazeno 1 - 10
of 82
pro vyhledávání: '"P.D. Foo"'
Publikováno v:
Thin Solid Films. 504:265-268
This paper reports comparative studies of TaN and SiCN as barrier for Cu-porous dielectric (k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45d0b4368372c92330d1c144347e20eb
https://doi.org/10.1016/j.tsf.2005.09.166
https://doi.org/10.1016/j.tsf.2005.09.166
Publikováno v:
Thin Solid Films. 504:235-238
This paper reports the effect of a SiCN/Ta bilayer barrier on the electrical properties and thermal stability of single damascene lines for Cu-ultra low k integration. By introducing an additional SiCN layer prior to a Ta barrier, breakdown voltage,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39bf4466fe3d2ae6c015ed7b268d9541
https://doi.org/10.1016/j.tsf.2005.09.130
https://doi.org/10.1016/j.tsf.2005.09.130
Publikováno v:
Thin Solid Films. :182-185
This paper reports the study of the thermal stability of the Cu(150 nm)/Ta(25 nm)/ultra low- k (ULK) porous polymer(600 nm)/SiO 2 /Si structures for multilevel interconnects of the new generation integrated circuits (IC). It was found that the sheet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::679e7f0f57f7766cb2f038dc9e63a1f5
https://doi.org/10.1016/j.tsf.2004.05.071
https://doi.org/10.1016/j.tsf.2004.05.071
Publikováno v:
Thin Solid Films. :176-181
Tantalum (Ta), TaN and bilayer Ta/TaN barriers deposited on ultra-low-k porous polymer (ULKPP) and the thermal stability of their structures are comparatively investigated using various techniques. The Ta/ultra-low-k polymer shows the smallest sheet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe1f72238ae1af0be6fb37e1a4214578
https://doi.org/10.1016/j.tsf.2004.05.070
https://doi.org/10.1016/j.tsf.2004.05.070
Publikováno v:
International Journal of Nanoscience. :471-479
Two kinds of barrier layers, Ta and TaN , deposited on an ultra low k dielectric porous polymer film with k=2.3 were evaluated using various techniques after thermal treatments at 400°C for different periods of time. It was found that the sheet resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9431d78c23cc691052cd82e7550f0739
https://doi.org/10.1142/s0219581x04002279
https://doi.org/10.1142/s0219581x04002279
Publikováno v:
International Journal of Nanoscience. :481-487
This paper reports a detailed study of the thermal stability of Cu (150 nm )/ Ta (25 nm )/ porous polymer (600 nm )/ Si structures for multilevel interconnects of the new generation integrated circuits. The samples were annealed at 400°C for differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec2f121b2ffe501d63bcc936ae830f82
https://doi.org/10.1142/s0219581x04002280
https://doi.org/10.1142/s0219581x04002280
Publikováno v:
Microelectronics Reliability. 43:1311-1316
In this work, inspection tools and surface analysis instruments were used to inspect and to analyze the defects at copper bond pads fabricated with copper/low k dual damascene deep submicron interconnect process integration. The defects at level are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08390ed68840c14add0b8109f07d169d
https://doi.org/10.1016/s0026-2714(03)00134-3
https://doi.org/10.1016/s0026-2714(03)00134-3
Publikováno v:
Microelectronics Journal. 34:109-113
During via and trench plasma etching in dual damascene copper interconnects process integration, polymer residues and copper damage were created as by-products of the dry-etch process. The polymer residue chemical composition and copper damage were a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97d040bc450567da9f1b9f57b8ce3c43
https://doi.org/10.1016/s0026-2692(02)00154-4
https://doi.org/10.1016/s0026-2692(02)00154-4
Publikováno v:
Microelectronics Journal. 33:971-974
The properties of low-k SiCOH film deposited by plasma-enhanced chemical vapor deposition using trimethylsilane are reported here. The deposition process was performed at different temperatures from 200 to 400 °C. The influence of deposition tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1a0db01eb41a4f1f6a3070cf2b1d319
https://doi.org/10.1016/s0026-2692(02)00075-7
https://doi.org/10.1016/s0026-2692(02)00075-7
Publikováno v:
Microelectronics Journal. 33:229-234
This paper discusses the effects of byproduct components generated from a commercially available two components additive package on the copper plating performance for advanced interconnect metallization. The increase in accumulative breakdown product
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82d9bc08a23bd07c3b60ced7e75bf6f0
https://doi.org/10.1016/s0026-2692(01)00122-7
https://doi.org/10.1016/s0026-2692(01)00122-7