Zobrazeno 1 - 10
of 47
pro vyhledávání: '"P.C. van Son"'
Autor:
T.M. Klapwijk, P.C. van Son
Publikováno v:
Physica B: Condensed Matter. 204:190-194
We derive approximate connection rules for conduction-electron waves at an abrupt interface between two materials with different electronic properties. We avoid the arbitrariness in the connection rules for effective-mass wave functions by taking the
Autor:
Mark S. Sherwin, Dieter Bimberg, S. J. Allen, John Cerne, M. Sundaram, P.C. van Son, I.-H. Tan
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 341:174-177
At the UCSB free-electron laser we have realized a set-up to detect the photoluminescence from semiconductor quantum structures while they are irradiated with intense far-infrared radiation. The effect of the radiation on both quantum wells and quant
Autor:
R.J. Bakker, V. F. Anderegg, D.A. Jaroszynski, D. Oepts, P.C. van Son, C.A.J. van der Geer, P.W. van Amersfoort, A.F.G. van der Meer
Publikováno v:
Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment, 331, 79-83
The user-facility FELIX employs two FELs together covering the spectral range from 6.5 to 110 μm. Adjustment of the undulator strength permits wavelength tuning over a factor of two within two minutes while continuously providing several kilowatts o
Publikováno v:
Microelectronic Engineering, 21(1-4), 439-442
We have fabricated high-mobility silicon metal-oxide-semiconductor field-effect transistors containing gaps as narrow as 100 nm in the gate electrode. The submicron gaps are defined by electron beam lithography and by reactive ion etching. These devi
Publikováno v:
Physica B: Condensed Matter. 175:311-314
A niobium-silicon heterostructure is used to study the transmission of electron waves through an interface between two materials with different electron densities, analogous to the transmission of electromagnetic waves through an interface between tw
Publikováno v:
Journal of Physics: Condensed Matter. 3:4297-4300
The authors have performed electron transport studies in the quantum Hall regime on high-mobility Si MOSFETS with an adjustable discontinuity in the density of the two-dimensional electron gas. To achieve this they etch a gap with submicron width in
Autor:
P.C. van Son, B. N. Murdin, Tjeerd O. Klaassen, Paul C. M. Planken, J. N. Hovenier, W.Th. Wenckebach, Guido Knippels
Publikováno v:
Proceedings of 5th European Quantum Electronics Conference.
Autor:
D. Oepts, J. Burghoorn, Tjeerd O. Klaassen, V. F. Anderegg, P.C. van Son, R.J. Bakker, W.Th. Wenckebach, P.W. van Amersfoort, A.F.G. van der Meer
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 331:254-256
The powerful output of FELIX, the recently built Rijnhuizen free electron laser, is used for the first frequency dependent study of nonlinear optical excitation of Hg 1− x Cd x Te in the far infrared spectral region. Two-photon interband absorption
Publikováno v:
Superlattices and Microstructures, 12(2), 191-193
The conductance of ballistic point contacts in high-mobility Si-inversion layers has been studied at several temperatures between 75 and 600 mK both without and in a magnetic field (up to 12T). When the width of constriction is varied in zero magneti
Autor:
J.N. Hovenier, Tjeerd O. Klaassen, P.C. van Son, B. N. Murdin, W.Th. Wenckebach, Guido Knippels, Paul C. M. Planken
Publikováno v:
Physical Review B-Condensed Matter and Materials Physics, 51 (15)
Physical Review B, 51, 9643-9647
Physical Review B, 51, 9643-9647
By measuring changes in the photoconductivity induced by picosecond far-infrared pulse pairs from a free-electron laser, we have time resolved the free-induction decay of the 1s-210 and 1s-2${\mathit{p}}^{+}$ Si-shallow-donor transitions in bulk GaAs