Zobrazeno 1 - 10
of 59
pro vyhledávání: '"P.C. Pattnaik"'
Autor:
C. C. Tsuei, James A. Misewich, Jonathan Z. Sun, W. M. Donath, Ayush Gupta, R. J. von Gutfeld, A. G. Schrott, Brent A. Scott, Dennis M. Newns, T. Doderer, B.M. Grossman, P.C. Pattnaik
Publikováno v:
Journal of Electroceramics. 4:339-344
A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel leng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7af97b9d66bccab838ee9ae4c2ac9e1e
https://doi.org/10.1023/a:1009914609532
https://doi.org/10.1023/a:1009914609532
Autor:
P.C. Pattnaik, Charles L. Kane, Dennis M. Newns, C. C. Tsuei, H. R. Krishnamurthy, Cheng-Chung Chi
Publikováno v:
Physica B: Condensed Matter. :801-807
The cuprate superconductor problem is approached from the conventional metallic standpoint, valid at dopings near the Tc maximum and beyond. There is strong evidence that the Tc maximum corresponds to EF lying at a van Hove singularity, a special sit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d46c5e89370803e629a07b6d22073849
https://doi.org/10.1016/0921-4526(93)90709-f
https://doi.org/10.1016/0921-4526(93)90709-f
Publikováno v:
Physical Review B. 45:5714-5717
Calculations of the quasiparticle-lifetime broadening 1/{tau}, both for idealized and realistic models of the band structure, show a large lifetime broadening from electron-electron scattering, with the characteristic linear dependence on energy from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3a7ff0dcc5b607144f09e37b5c785ca
https://doi.org/10.1103/physrevb.45.5714
https://doi.org/10.1103/physrevb.45.5714
Publikováno v:
MRS Proceedings. 623
We describe simulations on a simplified design for a metal-oxide nanoscale Field Effect Transistor (FET). The device features an oxide channel with a high dielectric constant ferroelectric as the gate insulator. In the present model, the gate and sou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eac6333ea84130be78f966c06871dc2
https://doi.org/10.1557/proc-623-11
https://doi.org/10.1557/proc-623-11
Autor:
M. Daumling, Dennis M. Newns, Cheng-Chung Chi, C. C. Tsuei, P.C. Pattnaik, H. R. Krishnamurthy, Charles L. Kane
Publikováno v:
MRS Proceedings. 275
The cuprate superconductor problem is approached from the conventional metallic standpoint, valid at dopings near the Tc maximum and beyond. There is strong evidence that the Tc maximum corresponds to EF lying at a van Hove singularity, a special sit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1465ea5686332191bc3ecb7c8a5db3f7
https://doi.org/10.1557/proc-275-3
https://doi.org/10.1557/proc-275-3
Publikováno v:
High-Temperature Superconductivity ISBN: 9781461364719
After many experimental difficulties with high temperature superconductors, the realization is emerging that there is a connection between their anomalous normal state properties, whose origin lies in the anomalously high quasiparticle lifetime broad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b283394ee60a7f0d08dcc67ab9af8af2
https://doi.org/10.1007/978-1-4615-3338-2_52
https://doi.org/10.1007/978-1-4615-3338-2_52
Conference
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Publikováno v:
IEEE Electron Device Letters. 7:214-218
Analytical models with parameters numerically extracted from I-V data have been used in simulation of MOS circuits. The equations are quasi-physical and the extracted parameters do not normally relate to any single identifiable physical mechanism. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92bd1f9929fb1b97c310f033524e49f5
https://doi.org/10.1109/edl.1986.26350
https://doi.org/10.1109/edl.1986.26350
Akademický článek
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Akademický článek
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