Zobrazeno 1 - 10
of 52
pro vyhledávání: '"P.A.C. Whiffin"'
Publikováno v:
Semiconductor Science and Technology. 8:S183-S196
In two recent review papers on metal organic vapour phase epitaxy (MOVPE) of cadmium mercury telluride (CMT) particular emphasis was placed on the crucial importance of doping studies to the realization of future device structures Irvine et al. (1991
Publikováno v:
Semiconductor Science and Technology. 6:C26-C30
This paper describes work carried out towards achieving extrinsically doped CdxHg1-xTe (CMT) heterostructures grown with stable dopants and sharp junctions. Both acceptor and donor doping of CMT has been achieved in our MOVPE growth reactor using the
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:1682
The doping behavior of indium and iodine have been investigated for mercury cadmium telluride (MCT, Hg1−xCdxTe ) layers deposited by the interdiffused multilayer process procedure at 400 °C using diethyl tellurium and dimethyl cadmium. Trimethyl i
Publikováno v:
Journal of Crystal Growth. 23:21-24
It is shown that crystals of Bi 12 TiO 20 , Bi 40 Fe 2 O 63 and Bi 40 Ga 2 O 63 can be grown from solution in Bi 2 O 3 by a top seeding technique. All three materials crystallize in the cubic γ-form and Bi 40 Fe 2 O 63 , like Bi 12 TiO 20 , is incon
Autor:
J.C. Brice, P.A.C. Whiffin
Publikováno v:
Journal of Crystal Growth. 23:25-28
It is shown that KTaxNb1-xO3 crystals with x ∼ 0.35 have a growth rate ƒ given by ƒ = 72.5 ΔC2 cm s-1, where ΔC is the supersaturation at the interface measured in moles cm-3. Most of this supersaturation is due to the temperature difference be
Publikováno v:
Journal of Crystal Growth. 32:205-210
This paper describes apparatus used to investigate the rotational instability seen during the Czochralski growth of bismuth silicon oxide crystals. A rotating platinum disc is used to simulate the crystal/liquid interface. Rotating and fixed thermoco
Publikováno v:
Journal of Crystal Growth. 79:935-939
A versatile reactor has been developed for the epitaxial deposition of multilayer CMT heterostructures, using the metal alkyls dimethyl cadmium and diethyl tellurium. The IMP (Interdiffused Multilayer Process) deposition technique is employed for ach
Publikováno v:
Journal of Crystal Growth. 96:519-532
Layers of Cd x Hg 1− x Te (CMT) have been grown by thermal metalorganic vapour phase epitaxy (MOVPE) at temperatures between 420 and 350°C on CdTe substrates of various orientation. The differences in surface morphology, crystalline quality and el
Publikováno v:
Journal of Crystal Growth. 82:495-500
Temperature variations have been found to occur during the metal-organic vapour phase epitaxy (MOVPE) growth of Cd x Hg 1 - x Te (CMT) using the interdiffused multilayer process (IMP). A temperature rise was observed during the CdTe growth cycle whic
Publikováno v:
Materials Letters. 6:365-368
Layers of CdxHg1−xTe have been grown by metal-organic vapour phase epitaxy and doped with arsenic and with phosphorus. This has been achieved by establishing metal-rich gas phase conditions during growth and obviates the need for high temperature