Zobrazeno 1 - 10
of 29
pro vyhledávání: '"P.A. Trubenko"'
Autor:
E. M. Dianov, P.A. Trubenko, Vladimir I. Kozlovsky, Andrey B. Krysa, E.A. Shcherbakov, A S Nasibov
Publikováno v:
Journal of Crystal Growth. 159:609-612
Cathodoluminescence (CL), photoreflection (PR), phototransmission (PT) of single and multiquantum wells (MQWs) and strain layer ZnCdSeZnSe superlattices (SLs) grown by molecular beam epitaxy (MBE) were studied. An increase of the Stokes shift with th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e277d02b5c7f0b07e2b165c7086d75d
https://doi.org/10.1016/0022-0248(95)00723-7
https://doi.org/10.1016/0022-0248(95)00723-7
Publikováno v:
Optics Communications. 115:145-150
Theoretical and experimental studies of vibrational modes in the (Zn, Cd)Se/ZnSe quantum wells and ZnSe films are presented. The space distribution of electric field accompanying the quasi-transverse vibrations and hence the intensity of correspondin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08dddff9e4c84c72b30947a3baf27f66
https://doi.org/10.1016/0030-4018(94)00651-a
https://doi.org/10.1016/0030-4018(94)00651-a
Autor:
Evgenii M Dianov, Yurii V Korostelin, Vladimir I Kozlovskii, P V Shapkin, Yan K. Skasyrsky, P.A. Trubenko
Publikováno v:
Quantum Electronics. 28:294-296
The method of molecular beam epitaxy on a ZnSe substrate was used to grow a ZnCdSe/ZnSe structure with 115 quantum wells. This structure was made up into a cavity which included part of the substrate. Lasing was excited by longitudinal pumping with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf04acf359b2164e92ff7d3c50b09075
https://doi.org/10.1070/qe1998v028n04abeh001226
https://doi.org/10.1070/qe1998v028n04abeh001226
Publikováno v:
Semiconductors. 31:186-188
The thermal stability and luminescence properties of ZnCdSe/ZnSe quantum-well structures grown by molecular-beam epitaxy are investigated. A comparative analysis is made of the photoluminescence spectra of the structures before and after annealing. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d41085176864978561eb70ef3463084e
https://doi.org/10.1134/1.1187104
https://doi.org/10.1134/1.1187104
Autor:
Vladimir I. Kozlovsky, Yu. M. Popov, A S Nasibov, Andrey B. Krysa, N. G. Basov, P.A. Trubenko, E.A. Shcherbakov, A. M. Prokhorov, E. M. Dianov
Publikováno v:
IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14b0f2e35bd7659d8bb20cfb2021b3cf
https://doi.org/10.1109/leosst.1995.764064
https://doi.org/10.1109/leosst.1995.764064
Autor:
N G Basov, E A Shcherbakov, A M Prokhorov, A S Nasibov, Yurii M Popov, Andrei B Krysa, Vladimir I Kozlovskii, P.A. Trubenko, Evgenii M Dianov
Publikováno v:
Quantum Electronics. 25:726-728
A superlattice with strained ZnCdSe/ZnSe layers was grown by the method of molecular beam epitaxy. This superlattice was used as the active layer in the screen of a laser cathode-ray tube. The room-temperature output power was 1.6 W in the form of on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5de0c4b568f1d2732bb636f2a2a7eb92
https://doi.org/10.1070/qe1995v025n08abeh000454
https://doi.org/10.1070/qe1995v025n08abeh000454
Publikováno v:
Semiconductors
Molecular-beam epitaxy was used to grow distributed Bragg mirrors on ZnSe substrates. These mirrors are composed of 10.5 and 20 pairs of alternating quarter-wave ZnMgSe and ZnCdSe layers with reflectance peaks at the wavelengths of 530 and 560 nm, re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1a1612d3e61e3ee0374794af69c5d38
https://gfzpublic.gfz-potsdam.de/pubman/item/item_4693958
https://gfzpublic.gfz-potsdam.de/pubman/item/item_4693958
Publikováno v:
Journal of Crystal Growth
We have studied MBE-grown CdSe submonolayers (SMLs) using cathodoluminescence (CL) and transmission electron microscopy (TEM). The CdSe SMLs were embedded into ZnSe matrix layer and made to undergo different lattice strains from thick ZnSSe, ZnSe and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1eb779355980785f04ca3d6f4a83f7b
https://gfzpublic.gfz-potsdam.de/pubman/item/item_4694006
https://gfzpublic.gfz-potsdam.de/pubman/item/item_4694006
Autor:
N.G. Basov, E.M. Dianov, V.I. Kozlovsky, A.B. Krysa, A.S. Nasibov, Yu. M. Popov, A.M. Prokhorov, P.A. Trubenko, E. A. Shcherbakov
Publikováno v:
Semiconductor Lasers Advanced Devices and Applications.
The use of a broad-bandgap II-VI semiconductors and their ternary and quaternary alloys for vertical-cavity surface-emitting laser (VCSEL) fabrication open a new additional possibilities for their design and applications. In particular, one of the pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b495ba5261dfc9ef24de6d4f06b499f6
https://doi.org/10.1364/slada.1995.tud.1
https://doi.org/10.1364/slada.1995.tud.1
Autor:
P V Shapkin, Yurii V Korostelin, Vladimir I Kozlovskii, Yan K. Skasyrsky, P.A. Trubenko, Evgenii M Dianov
Publikováno v:
Quantum Electronics. 28:468-468
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::054778709f5a8d8ee137619b0b065a1b
https://doi.org/10.1070/qe1998v028n05abeh001271
https://doi.org/10.1070/qe1998v028n05abeh001271