Zobrazeno 1 - 10
of 52
pro vyhledávání: '"P.A. Maki"'
Autor:
L.J. Mahoney, R. H. Mathews, C.L. Chen, J.P. Sage, T.C.L.G. Sollner, P.A. Maki, C. D. Parker, S.D. Calawa, K.M. Molvar
Publikováno v:
Solid-State Electronics. 44:1853-1856
Monolithic resonant-tunneling-diode (RTD) relaxation oscillators are fabricated. The highest repetition rate of this pulse generator is 6.7 GHz with a pulse width of approximately 60 ps. Oscillators with an RTD connected to an off-chip transmission l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9686fd960b2b7471f406b381909031
https://doi.org/10.1016/s0038-1101(00)00105-2
https://doi.org/10.1016/s0038-1101(00)00105-2
Autor:
Chang-Lee Chen, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner, R. H. Mathews, L.J. Mahoney, K.M. Molvar
Publikováno v:
Proceedings of the IEEE. 87:596-605
We describe a new family of clocked logic gates based on the resonant-tunneling diode (RTD). Pairs of RTDs form storage latches, and these are connected by networks consisting of field-effect transistors (FETs), saturated resistors, and RTDs. The des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8090256068af36d5a5bac06230ad3d31
https://doi.org/10.1109/5.752517
https://doi.org/10.1109/5.752517
Autor:
R. H. Mathews, C. L. Chen, L.J. Mahoney, K.M. Molvar, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner
Publikováno v:
Applied Physics Letters. 74:4058-4060
Device-quality layers were regrown on GaAs wafers by molecular-beam epitaxy over conductive pregrown areas and on selectively patterned high-resistivity areas formed by oxygen implantation. The regrowth over both areas resulted in comparable device-q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64218fce0171f8839718210432977745
https://doi.org/10.1063/1.123260
https://doi.org/10.1063/1.123260
Autor:
L.J. Mahoney, R. H. Mathews, C.L. Chen, K.M. Molvar, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner
Publikováno v:
IEEE Electron Device Letters. 19:478-480
A novel technique of integrating resonant-tunneling diodes (RTDs) with pseudomorphic high-electron-mobility transistors (pHEMTs) is demonstrated. A proton was implanted through the pHEMT layers to convert the RTD structure underneath to a high-resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c34596481460acae86dd6b559225ff9
https://doi.org/10.1109/55.735752
https://doi.org/10.1109/55.735752
Autor:
C.L. Chen, L.J. Mahoney, G.L. Fitch, J.P. Sage, T.C.L.G. Sollner, K.M. Molvar, R. H. Mathews, P.A. Maki
Publikováno v:
IEEE Electron Device Letters. 18:489-491
Resonant-tunneling diodes (RTDs) with a new planar configuration have been fabricated with a new self-aligned process that is compatible with that of silicon integrated-circuits technology. The size of the RTD is determined by a shallow boron implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4a1fb8fdc8d0dbdad587b5f9a7c3dcb
https://doi.org/10.1109/55.624927
https://doi.org/10.1109/55.624927
Publikováno v:
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d7d46f66237e486272558e7eab90b30
https://doi.org/10.1109/leosst.1992.697506
https://doi.org/10.1109/leosst.1992.697506
Publikováno v:
LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings.
Summary form only given. We are developing smart sensors that perform retina-like functions using optically cascaded analog smart-pixel arrays. By performing operations such as center-surround or oriented edge detection in a fully parallel fashion be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d18c2403d66cd947692d0969369e906
https://doi.org/10.1109/leos.1995.484696
https://doi.org/10.1109/leos.1995.484696
Autor:
P.A. Maki, D.J. Ehrlich
Publikováno v:
Topical Meeting on Microphysics of Surfaces, Beams and Adsorbates.
Schottky barrier heights of all metals deposited on GaAs are largely controlled by the inherent Fermi level pinning at the surface which appears with even submonolayer coverages of metals or oxygen. The measured electrical characteristics of Schottky
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::869f9ca539893f54bfc5d4994cf14162
https://doi.org/10.1364/msba.1987.ma3
https://doi.org/10.1364/msba.1987.ma3
Publikováno v:
Electronics Letters. 20:145
We wish to report on the successful fabrication of submicrometre channel length (0.75 μm) and gate length (0.15 μm) vertical electron transistors with AlGaAs cathodes. Lack of electron velocity enhancement has been proposed to be due to high operat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5629a2064f350edaa618287ab037565
https://doi.org/10.1049/el:19840098
https://doi.org/10.1049/el:19840098
Conference
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