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pro vyhledávání: '"P.A. Kiely"'
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Autor:
P.R. Claisse, Geoffrey W. Taylor, P.A. Kiely, D.P. Docter, S. Daryanani, P.A. Evaldsson, S.K. Sargood, P. Cooke, T. Vang
Publikováno v:
IEEE Journal of Quantum Electronics. 29:785-800
An approach to laser-based optoelectronic integration is described. It is shown that by using a single epitaxial growth structure and a common processing sequence, all the electrical and optical devices required for a complete optoelectronic integrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c9c417023fc76af2f5a74f814603bb6
https://doi.org/10.1109/3.199330
https://doi.org/10.1109/3.199330
Autor:
P. Cooke, P.R. Claisse, C. A. Burrus, D.P. Docter, S.K. Sargood, T. Vang, Geoffrey W. Taylor, P.A. Kiely
Publikováno v:
IEEE Journal of Quantum Electronics. 29:136-149
An approach to optoelectronic integration utilizing a universal heterostructure with a single GaAs quantum-well active region is presented. The inversion channel forms the basis of a heterojunction field-effect transistor, a lateral current injection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4fb110c07530adab0fdd5b1d412c553
https://doi.org/10.1109/3.199252
https://doi.org/10.1109/3.199252
Autor:
P. Evaldsson, D.P. Docter, S. Daryanani, P.A. Kiely, P.R. Claisse, P. Cooke, S.K. Sargood, Geoffrey W. Taylor, T. Vang
Publikováno v:
LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e5b22f9d09d4edf0ed47cd74f630b26
https://doi.org/10.1109/leos.1990.690608
https://doi.org/10.1109/leos.1990.690608
Autor:
J. Sheridan-Eng, D. Klotzkin, Martin C. Fischer, Keisuke Kojima, Genji Tohmon, N. Chand, P.A. Kiely, Yan Xu
Publikováno v:
Optical Fiber Communication Conference and Exhibit.
We have fabricated SSC-DFB laser transmitter modules, which give enough output power, and can tolerate strong reflection. They satisfy the SDH/SONET requirements for transmission up to 15 km at 2.5 Gbit/s. Because of the expected low packaging cost,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3ffea62f2d886d4b0af2d0e58d3b156
https://doi.org/10.1109/ofc.2002.1036495
https://doi.org/10.1109/ofc.2002.1036495
Autor:
P.A. Kiely, Michael S. Lebby, Geoffrey W. Taylor, B. Tell, P. Cooke, D. L. Crawford, T. Y. Chang, K. Brown-Goebeler, J.G. Simmons, A. Isabelle
Publikováno v:
Proceedings of the 1988 Bipolar Circuits and Technology Meeting.
The BICFET, a new form of bipolar transistor that offers superior performance for III-V bipolar integrated circuits and several unique advantages over known approaches for optoelectronic integration, is described. The BICFET does not have a base. Ins
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2797281f221ea81a7bf916baf6bfef11
https://doi.org/10.1109/bipol.1988.51041
https://doi.org/10.1109/bipol.1988.51041
Publikováno v:
Growth Hormone & IGF Research. 22:S80-S81
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c4480481719df77fd9663c803725781
https://doi.org/10.1016/s1096-6374(12)60212-3
https://doi.org/10.1016/s1096-6374(12)60212-3
Autor:
Miroslav Micovic, P.A. Evaldsson, P.R. Claisse, A. Lepore, P.A. Kiely, K.F. Brown-Goebeler, Geoffrey W. Taylor, Roger J. Malik, F.G. Storz, T. Vang, D.P. Docter
Publikováno v:
Electronics Letters. 30:529-531
The scaling to 0.5 µm of the inversion channel HFET with a single strained InGaAs quantum well is described. A unity current gain frequency of 40 GHz, gm = 205 mS/mm and VTH = –0.34 V have been obtained for 0.5 × 100 µm2 devices. For shorter gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::599706e55e6765c11d7bb9f779c09afa
https://doi.org/10.1049/el:19940354
https://doi.org/10.1049/el:19940354
Autor:
Geoffrey W. Taylor, P.A. Kiely
Publikováno v:
IEEE Transactions on Electron Devices. 41:1871-1873
The threshold voltage dependence on the channel length for the inversion channel HFET is investigated. Modifying the charge equations to account for source and drain depletion into the channel region yields a length dependent threshold voltage equati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c7c80ec3666f964e9ca61f810c5eff
https://doi.org/10.1109/16.324602
https://doi.org/10.1109/16.324602
Publikováno v:
Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
High speed capability up to 14 GHz is reported for the inversion channel HFET using the inversion channel technology device structure. The transistor is fabricated from the same epitaxial growth and with the same fabrication technology as previously
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1528a324ef859d113450452d03908242
https://doi.org/10.1109/cornel.1993.303109
https://doi.org/10.1109/cornel.1993.303109