Zobrazeno 1 - 10
of 103
pro vyhledávání: '"P.-J. Tzeng"'
Autor:
Kelli M. McCourt, Jarad Cochran, Sabah M. Abdelbasir, Elizabeth R. Carraway, Tzuen-Rong J. Tzeng, Olga V. Tsyusko, Diana C. Vanegas
Publikováno v:
Biosensors, Vol 12, Iss 12, p 1082 (2022)
Biosensors often combine biological recognition elements with nanomaterials of varying compositions and dimensions to facilitate or enhance the operating mechanism of the device. While incorporating nanomaterials is beneficial to developing high-perf
Externí odkaz:
https://doaj.org/article/fe9a09d09ad64890a530cb32b15eed73
Autor:
Tzuen-Rong J Tzeng, Tzu-Yu Liu, Chiao-Wei Lin, Pei-En Chang, Pei-Xin Liao, Wen-Yuan Yang, Chih-Yuan Cheng, Pei-Chun Liao, Wen-Dee Chiang, Shih-Torng Ding, Yuan-Yu Lin
Publikováno v:
Animals, Vol 11, Iss 5, p 1381 (2021)
Alternative growth promoters are able to not only effectively replace the traditional use of antibiotics but also provide additional health benefits for livestock and reduce food safety concerns. This study investigated the effects of dry Hydrastis c
Externí odkaz:
https://doaj.org/article/5fdc79e429254ab48d30cc26bd75defb
Autor:
Z.-F. Lou, C.-Y. Liao, K.-Y. Hsiang, C.-Y. Lin, Y.-D. Lin, P.-C. Yeh, C.-Y. Wang, H.-Y. Yang, P.-J. Tzeng, T.-H. Hou, Y.-T. Tang, M. H. Lee
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b0908aa8ff3362f449496c0ee2beac6
https://doi.org/10.1109/vlsi-tsa54299.2022.9771012
https://doi.org/10.1109/vlsi-tsa54299.2022.9771012
Publikováno v:
PLoS ONE, Vol 9, Iss 7, p e101664 (2014)
Ovarian cancer, the deadliest of gynecologic cancers, is usually not diagnosed until advanced stages. Although carboplatin has been popular for treating ovarian cancer for decades, patients eventually develop resistance to this platinum-containing dr
Externí odkaz:
https://doaj.org/article/a930fea0456e4aca9d3ae3c8c4ffecd9
Autor:
S.-H. Chang, Min-Hung Lee, S.-H. Chiang, Ming-Han Liao, C.-Y. Wang, Chun-Ming Chang, H.-Y. Yang, Yu-De Lin, Y.-Y. Lin, Y.-Y. Tseng, K.-T. Chen, P.-C. Yeh, P.-J. Tzeng, J.-H. Liu, C. Lo, G.-Y. Siang, H. Liang, C.-Y. Chueh, Yao-Joe Yang, Y.-J. Tseng, Shun-Ping Chang, F.-C. Hsieh
Publikováno v:
IRPS
The 3D double layer Ω-type FETs with ferroelectric HfZrO 2 gate served for one-transistor (1T) architecture is demonstrated and studied for memory reliability. The high endurance is presented more than 106 cycles P/E with 4V. Multi-domain model inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90835884fd91981387bd12ebaaf6ec11
https://doi.org/10.1109/irps45951.2020.9129088
https://doi.org/10.1109/irps45951.2020.9129088
Autor:
C. C. Wang, S. C. Chen, C. C. Chen, Y. H. Chang, Y. C. Hsin, P. J. Tzeng, T. C. Hsu, Tzu-Kun Ku, E. H. Chen, J. C. Chen, S. C. Liao, Y. M. Lin, C. H. Lin, P. C. Chang
Publikováno v:
ECS Transactions. 52:3-6
TSV based 3D stacking IC technology has been aggressively studied recently because of strong benefits in terms of significantly form factor shrinkage, superior system performance (bandwidth & speed), great power reduction, and heterogeneous integrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f0bfd97bf05ff803c6244b15d02c20
https://doi.org/10.1149/05201.0003ecst
https://doi.org/10.1149/05201.0003ecst
Autor:
P. J. Tzeng, Y. Mizushima, Koji Fujimoto, Shoichi Kodama, Nobuhide Maeda, Akihito Kawai, Tzu-Kun Ku, Takayuki Ohba, Young Suk Kim, T. C. Hsu
Publikováno v:
2016 International Conference on Electronics Packaging (ICEP).
This paper describes electrical characteristics of bumpless and dual-damascene TSV interconnects for three-dimensional integration (3DI) using Wafer-on-Wafer (WOW) technology. Process optimization counter to integration issues of TSV formation proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fa235d4879cd2c04472b556ab73760f
https://doi.org/10.1109/icep.2016.7486786
https://doi.org/10.1109/icep.2016.7486786
Autor:
J. H. Lau, C.-J. Zhan, P.-J. Tzeng, C.-K. Lee, M.-J. Dai, H.-C. Chien, Y.-L. Chao, W. Li, S.-T. Wu, J.-F. Hung, R.-M. Tain, C.-H. Lin, Y.-C. Hsin, C.-C. Chen, S.-C. Chen, C.-Y. Wu, J.-C. Chen, C.-H. Chien, C.-W. Chiang, H.-H. Chang, W.-L. Tsai, R.-S. Cheng, S.-Y. Huang, Y.-M. Lin, T.-C. Chang, C.-D. Ko, T.-H. Chen, S.-S. Sheu, S.-H. Wu, Y.-H. Chen, W.-C. Lo, T.-K. Ku, M.-J. Kao, D.-C. Hu
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 8:171-178
The feasibility of a 3D IC integration SiP has been demonstrated in this investigation. The heart of this SiP is a TSV (through-silicon via) interposer with an RDL (redistribution layer) on both sides, IPD (integrated passive devices), and SS (stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::678f3d464ab99ca88abd0b1a0d2dc22b
https://doi.org/10.4071/imaps.306
https://doi.org/10.4071/imaps.306
Autor:
Jie Xue, T-H Chen, S. Chung, John H. Lau, T-K Ku, C-J Zhan, Y. Lee, P. Chang, S-C Chen, M-J Kao, H. Fu, C-T Ko, Y. Hsu, Li Li, M-J Dai, W. Tsai, W-C Lo, C-K Lee, P-J Tzeng, Z. Hsiao, Y-H Chen, M. Brillhart, J. Huang, S-W Chen
Publikováno v:
International Symposium on Microelectronics. 2011:000650-000656
In this study, the wafer bumping and characterization of fine-pitch lead-free solder microbumps on 300mm wafer for 3D IC integration are investigated. Emphasis is placed on the Cu-plating solutions (conformal and bottom-up). Also, the amount of Cu an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13c1100ae76a72ff83fb3f0d772e7338
https://doi.org/10.4071/isom-2011-wa6-paper2
https://doi.org/10.4071/isom-2011-wa6-paper2
Autor:
C. C. Wang, Jer-Ren Yang, Kou-Chen Liu, L. S. Lee, M.-J. Tsai, P.-J. Tzeng, Heng-Yuan Lee, T.-Y. Wang, Siddheswar Maikap
Publikováno v:
Semiconductor Science and Technology. 22:884-889
Charge trapping characteristics of high-relative permittivity (high-?) HfO2 films with Al2O3 as a blocking oxide in p-Si/SiO2/HfO2/Al2O3/metal memory structures have been investigated. All high-? films have been grown by atomic layer deposition. A tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ee230f150515ad5db4c1ac2e825152a
https://doi.org/10.1088/0268-1242/22/8/010
https://doi.org/10.1088/0268-1242/22/8/010