Zobrazeno 1 - 10
of 55
pro vyhledávání: '"P.-J. Ribeyron"'
Autor:
Francesco Rametta, G. Condorelli, Wilfried Favre, Pietro Rotoli, Alfredo Di Matteo, Dario Iuvara, Antonino Ragonesi, Charles Roux, P.-J. Ribeyron, Cosimo Gerardi, M. Foti, Marcello Sciuto, Yannick Veschetti, Aude Derrier, Vincent Bath, A. Danel, Domenico Nicotra, Lionel Sicot
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
This paper reports on the first months of operation of the silicon heterojunction production line at Enel Green Power which started in April 2019 as well as strategies for efficiency improvement. The efficiency of the lines reached in short time is d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e890c990ec937c2cfb88743ef2ddfa1
https://doi.org/10.1109/pvsc45281.2020.9300806
https://doi.org/10.1109/pvsc45281.2020.9300806
Autor:
P.-J. Ribeyron
Publikováno v:
Nature Energy
Nature Energy, 2017, 2 (5), pp.17067. ⟨10.1038/nenergy.2017.67⟩
Nature Energy, Nature Publishing Group, 2017, 2 (5), pp.17067. ⟨10.1038/nenergy.2017.67⟩
Nature Energy, 2017, 2 (5), pp.17067. ⟨10.1038/nenergy.2017.67⟩
Nature Energy, Nature Publishing Group, 2017, 2 (5), pp.17067. ⟨10.1038/nenergy.2017.67⟩
International audience; Silicon-based photovoltaics dominate the market. A study now sets a new record efficiency for large-area crystalline silicon solar cells, placing the theoretical efficiency limits within reach.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9ed2035f0ab3007e69acdc96f3d1233
https://cea.hal.science/cea-01887585/document
https://cea.hal.science/cea-01887585/document
Autor:
P.-J. Ribeyron, Yannick Veschetti, B. Novel, Bettinelli, S. Manuel, C. Gillot, F. Ozanne, Cabal, F. Barbier, S. Gall, V. Sanzone
Publikováno v:
Energy Procedia. 33:11-17
High efficiencies have been demonstrated on n-type solar cells thanks to advanced passivation layers and metallisation techniques. In this paper we present the latest results obtained with our bifacial cell structure, using BCl3 diffusion for emitter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48ba1f77528598afe811a0ca051fa20f
https://doi.org/10.1016/j.egypro.2013.05.034
https://doi.org/10.1016/j.egypro.2013.05.034
Interface states characterization in heterojunction solar cells from CV–GV measurements and modeling
Publikováno v:
Microelectronic Engineering. 88:1247-1250
A new method is proposed to extract interface states density D"i"t at the hydrogenated amorphous/crystalline silicon interfaces (aSi:H/cSi) of heterojunction solar cells - HET. This technique based on CV and GV measurements consists in adapting stand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc5398e9d01cbc415fc86ab03d1eed48
https://doi.org/10.1016/j.mee.2011.03.113
https://doi.org/10.1016/j.mee.2011.03.113
Publikováno v:
Solar Energy Materials and Solar Cells. 95:1057-1061
In this work, we focus on ZnO:B layers as an alternative TCO for application on a-Si:H/c-Si heterojunction solar cells. First, the optimization of the material has been done in terms of optical and electrical properties. We have also studied the beha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::416a7f6fad4164684a0597a565ef0405
https://doi.org/10.1016/j.solmat.2010.11.013
https://doi.org/10.1016/j.solmat.2010.11.013
Publikováno v:
Energy Procedia. 2(1):59-64
Previous simulations of interdigitated back contact silicon heterojunction (IBC-SiHJ) solar cells have indicated that front surface passivation is a critical factor in the performance of such cells. This is why we here focus on the effect of a front
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd2d39bdff3aa1141f5aae6eb3c87c2c
Publikováno v:
physica status solidi c. 7:1033-1036
The combination of amorphous silicon/crystalline silicon heterojunction (a-Si:H/c-Si) concept with interdigitated back contact leads to a very promising structure for high efficiency solar cell. In this work, we study the interdigitated back contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06905533130a8ec811e37c97a1e7b508
https://doi.org/10.1002/pssc.200982778
https://doi.org/10.1002/pssc.200982778
Autor:
O. Nos, F. Jay, F. Ozanne, Delfina Muñoz, P.-J. Ribeyron, José Alvarez, Wilfried Favre, A. Valla
Publikováno v:
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2016, 144, pp.210-220. ⟨10.1016/j.solmat.2015.09.009⟩
www.elsevier.com/locate/solmat
Solar Energy Materials and Solar Cells, 2016, 144, pp.210-220. ⟨10.1016/j.solmat.2015.09.009⟩
Solar Energy Materials and Solar Cells, Elsevier, 2016, 144, pp.210-220. ⟨10.1016/j.solmat.2015.09.009⟩
www.elsevier.com/locate/solmat
Solar Energy Materials and Solar Cells, 2016, 144, pp.210-220. ⟨10.1016/j.solmat.2015.09.009⟩
International audience; Photoluminescence (PL) imaging is a fast and contactless technique that allows visualizing defective regions of a solar cell where local carrier lifetime is reduced. In this paper we present a PL based method for the quantific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dcbc792aeca3d07239d35b1b4dbdd250
https://hal.archives-ouvertes.fr/hal-01241097
https://hal.archives-ouvertes.fr/hal-01241097
Autor:
S. Ibrahim, P.-J. Ribeyron, J. Damon-Lacoste, Y. Veschetti, P. Roca i Cabarrocas, Jean-Paul Kleider, Alexander S. Gudovskikh
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2007, 515, pp.7481-7485
E-MRS 2006 Spring Meeting
E-MRS 2006 Spring Meeting, 2006, France
Thin Solid Films, 2007, 515, pp.7481-7485
Thin Solid Films, Elsevier, 2007, 515, pp.7481-7485
E-MRS 2006 Spring Meeting
E-MRS 2006 Spring Meeting, 2006, France
Thin Solid Films, 2007, 515, pp.7481-7485
The capabilities and limitations of the well-known C–V technique for the determination of the conduction band offsets in (n)a-Si:H/(p)c-Si heterojunctions are presented. In particular, the effects due to the presence of an inversion layer in c-Si a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b5c0913dc4fd571b04c955c61587787
https://doi.org/10.1016/j.tsf.2006.11.198
https://doi.org/10.1016/j.tsf.2006.11.198
Autor:
J.C. Muller, P.-J. Ribeyron, E. Rolland, Jean-Paul Kleider, Y. Veschetti, P. Roca i Cabarrocas, J. Damon-Lacoste, Alexander S. Gudovskikh
Publikováno v:
Thin Solid Films. :543-547
In this study, we investigate the properties of n-doped amorphous silicon layer a-Si:H(n) combined with intrinsic thin silicon film deposited on high quality p-type CZ crystalline silicon, aiming at developing high performance heterojunction solar ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e2428ae0c1e401e747e04d15b2e1cc0
https://doi.org/10.1016/j.tsf.2005.12.166
https://doi.org/10.1016/j.tsf.2005.12.166