Zobrazeno 1 - 10
of 39
pro vyhledávání: '"P.-E. Hellberg"'
Autor:
David A. Paz-García, Eric J. Armstrong, Iva Popovic, Raúl A. González-Pech, Michael E. Hellberg
Publikováno v:
Frontiers in Marine Science, Vol 10 (2023)
Externí odkaz:
https://doaj.org/article/1fc72fecbe544856a6c8db3fd078511c
Autor:
Ricardo M. Pedraza-Pohlenz, Eduardo F. Balart, J. J. Adolfo Tortolero-Langarica, Alma Paola Rodríguez-Troncoso, Michael E. Hellberg, Orión Norzagaray-López, Rafael A. Cabral-Tena, Amílcar Leví Cupul-Magaña, David A. Paz-García
Publikováno v:
Frontiers in Marine Science, Vol 9 (2023)
Differences in selective pressures and the energetic cost of gametes in gonochoristic corals should vary with the sex of the colony, which may lead to sexual dimorphism. Coral colonies are composed of subunits (corallites) that create a complex morph
Externí odkaz:
https://doaj.org/article/1d8b7d00317d4fb9bba8375d2489e46d
Publikováno v:
Frontiers in Marine Science, Vol 8 (2021)
Most tropical reef corals live at temperatures near 27°C and pH values near 8. Conditions outside of these can stress corals and lead to bleaching, disease, and death. However, some corals can survive in marginal or extreme habitats outside of these
Externí odkaz:
https://doaj.org/article/33cb7eb0f074488b8fabbaccbf337997
Autor:
P.-E. Hellberg, C. G. van Ginkel
Publikováno v:
Tenside Surfactants Detergents. 41:278-281
With the focus on quaternary ammonium compounds, this paper describes how the ortho ester chemistry can be used as a versatile tool for synthesis of cleavable surfactants of various types. This class of chemodegradable surfactants hydrolyzes rapidly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d846d2cd4c402492cccc70783312a2ed
https://doi.org/10.3139/113.100233
https://doi.org/10.3139/113.100233
Autor:
P.-E. Hellberg, A. Zuberbuehler
Publikováno v:
IPTC 2014: International Petroleum Technology Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b99499ebfdd880d05930dbe8b0a890
https://doi.org/10.3997/2214-4609-pdb.395.iptc-17336-ms
https://doi.org/10.3997/2214-4609-pdb.395.iptc-17336-ms
Publikováno v:
Journal of Applied Physics. 84:1632-1642
Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cf68188e25d814cc43bf00cdd757df3
https://doi.org/10.1063/1.368256
https://doi.org/10.1063/1.368256
Publikováno v:
Journal of Applied Physics. 82:5779-5787
A mathematical model of oxidation of SixGe1−x alloys is presented. The growth of SiO2 is simulated in conjunction with the determination of silicon distribution in SixGe1−x using numerical methods. The main feature of the model is the assumption
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21d35602c3094e8b7060c5c414a5f91b
https://doi.org/10.1063/1.366444
https://doi.org/10.1063/1.366444
Publikováno v:
Journal of Applied Physics. 82:5773-5778
The oxidation of polycrystalline SixGe1−x films with different compositions (i.e., different values of x) is carried out in pyrogenic steam at 800 °C for various lengths of time. It is found that the oxidation is enhanced by the presence of german
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69c2ebe9ffe785ce2a91ee2dfa97ad3a
https://doi.org/10.1063/1.366443
https://doi.org/10.1063/1.366443
Publikováno v:
Journal of The Electrochemical Society. 144:3968-3973
The solid solubility of B in is determined over the entire composition range from x = 1 (Si) to x = 0 (Ge). Polycrystalline films deposited using and were employed for the solubility study. Boron was introduced into the films either ex situ by ion‐
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cec6e547197aa53886b4a27eb63fc277
https://doi.org/10.1149/1.1838120
https://doi.org/10.1149/1.1838120
Publikováno v:
Thin Solid Films. :415-418
Tantalum pentoxide (Ta 2 O 5 ) thin layers were grown on Si(100) by evaporation of Ta in an atomic oxygen plasma. The physical and electrical properties of 1000 A-thick as-deposited films were evaluated. Films grown at 650 °C without the presence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::896ff7285d689bfafd7c4ec5c56e0cd5
https://doi.org/10.1016/0040-6090(96)08667-1
https://doi.org/10.1016/0040-6090(96)08667-1