Zobrazeno 1 - 10
of 64
pro vyhledávání: '"P. Zschieschang"'
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract Low saturation voltages and extremely high intrinsic gain can be achieved in contact‐controlled thin‐film transistors (TFTs) with staggered device architecture, enabled by the energy barrier introduced at the source contact. The resultin
Externí odkaz:
https://doaj.org/article/7764bc031d954b958ee401cec352f5e6
Autor:
Michael Geiger, Marion Hagel, Thomas Reindl, Jürgen Weis, R. Thomas Weitz, Helena Solodenko, Guido Schmitz, Ute Zschieschang, Hagen Klauk, Rachana Acharya
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-13 (2021)
Abstract A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a
Externí odkaz:
https://doaj.org/article/9457c49591c446feaa8bc64f742f878f
Autor:
Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamin Iniguez, Alexander Kloes
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 450-455 (2021)
An accurate and efficient noise-based simulation technique for predicting the impact of device-parameter variability on the DC statistical behavior of integrated circuits is presented. The proposed method is validated on a source follower, a diode-lo
Externí odkaz:
https://doaj.org/article/3ecabaede6334deebb278a04510a21fd
Publikováno v:
Advanced Electronic Materials, Vol 8, Iss 4, Pp n/a-n/a (2022)
Abstract Contact‐controlled transistors are rapidly gaining popularity. However, simply using a rectifying source contact often leads to unsatisfactory operation, merely as a thin‐film transistor with low drain current and reduced effective mobil
Externí odkaz:
https://doaj.org/article/05a0c7425d61499fae9215c9e827d7ed
Autor:
Jakob Leise, Jakob Pruefer, Ghader Darbandy, Masoud Seifaei, Yiannos Manoli, Hagen Klauk, Ute Zschieschang, Benjamin Iniguez, Alexander Kloes
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 396-406 (2020)
This journal paper introduces a charge-based approach for the calculation of charges and capacitances in staggered organic thin-film transistors (OTFTs). Based on an already existing DC model, the charges are yielded in an analytical and compact form
Externí odkaz:
https://doaj.org/article/9db9364071da489da8fc8cec54332ac2
Autor:
Lafkioti, Myrsini, Krauss, Benjamin, Lohmann, Timm, Zschieschang, Ute, Klauk, Hagen, Klitzing, Klaus v., Smet, Jurgen H.
The intrinsic doping level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies significantly and seems to depend strongly on processing details and the substrate morphology. Moreover
Externí odkaz:
http://arxiv.org/abs/0910.2596
A radial InGaAs/GaAs/1-hexadecanethiol superlattice is fabricated by the roll-up of a strained InGaAs/GaAs bilayer passivated with a molecular self-assembled monolayer. Our technique allows the formation of multi-period inorganic/organic hybrid heter
Externí odkaz:
http://arxiv.org/abs/cond-mat/0612373
Publikováno v:
Green Processing and Synthesis, Vol 1, Iss 4, Pp 375-384 (2012)
Design decisions made in early R&D of a new technology ultimately determine its future environmental performance. Owing to the awareness of environmental impacts of technologies during their life cycle, the optimization of their design seems fundamen
Externí odkaz:
https://doaj.org/article/d2e36dc261854f1c93e1a6ac27cd0b20
Publikováno v:
Nuklearmedizin. 55:34-40
SummaryAim: Hereditary pheochromocytoma-paraganglioma syndromes are characterized by multiple pheochromocytomas (PCC) and paragangliomas (PGLs), inherited in an autosomal dominant manner. Early detection and removal of tumours may prevent or minimize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32a03aa87b4249fa6c935624455dc283
https://doi.org/10.3413/nukmed-0755-15-07
https://doi.org/10.3413/nukmed-0755-15-07
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