Zobrazeno 1 - 10
of 138
pro vyhledávání: '"P. Zeitzoff"'
Publikováno v:
Research & Politics, Vol 11 (2024)
We investigate the relationship between education and antisemitism using unique individual-level survey data on antisemitism from more than 100 countries. Our findings show that education is associated with greater favorability toward Jews, but the r
Externí odkaz:
https://doaj.org/article/47af7cb79d474875be315c6f2f53d40f
Autor:
Brundage, Miles, Avin, Shahar, Clark, Jack, Toner, Helen, Eckersley, Peter, Garfinkel, Ben, Dafoe, Allan, Scharre, Paul, Zeitzoff, Thomas, Filar, Bobby, Anderson, Hyrum, Roff, Heather, Allen, Gregory C., Steinhardt, Jacob, Flynn, Carrick, hÉigeartaigh, Seán Ó, Beard, SJ, Belfield, Haydn, Farquhar, Sebastian, Lyle, Clare, Crootof, Rebecca, Evans, Owain, Page, Michael, Bryson, Joanna, Yampolskiy, Roman, Amodei, Dario
This report surveys the landscape of potential security threats from malicious uses of AI, and proposes ways to better forecast, prevent, and mitigate these threats. After analyzing the ways in which AI may influence the threat landscape in the digit
Externí odkaz:
http://arxiv.org/abs/1802.07228
Autor:
Brian E. Lacy, William D. Chey, Michael S. Epstein, Syed M. Shah, Patrick Corsino, Linda R. Zeitzoff, Brooks D. Cash
Publikováno v:
BMC Gastroenterology, Vol 22, Iss 1, Pp 1-9 (2022)
Abstract Background A randomized, placebo-controlled clinical trial (FDREST) of a novel formulation of caraway oil and L-menthol (COLM-SST) demonstrated symptom relief in patients with functional dyspepsia (FD). Two follow-up studies were conducted t
Externí odkaz:
https://doaj.org/article/24af56e881034192ac8cb1e8a7a1d9c1
Publikováno v:
Perspectives on Terrorism; Jun2024, Vol. 18 Issue 2, p30-56, 27p
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Political Science Research and Methods; October 2021, Vol. 9 Issue: 4 p709-727, 19p
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
IEEE Transactions on Electron Devices. 56:2291-2296
A comprehensive model is presented to analyze the three-dimensional (3-D) source-drain (S/D) resistance of undoped double-gated FinFETs of wide and narrow S/D width. The model incorporates the contribution of spreading, sheet, and contact resistances
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f445754f044bd8cb0956089dcb87ed42
https://doi.org/10.1109/ted.2009.2028377
https://doi.org/10.1109/ted.2009.2028377
Autor:
P. Zeitzoff, John R. Barker, Andrew R. Brown, Gennadi Bersuker, Giulio Ferrari, Asen Asenov, Jeremy R. Watling
Publikováno v:
Journal of Computational and Theoretical Nanoscience. 5:1072-1088
Scaling of Si MOSFETs beyond the 90 nm technology node requires performance boosters in order to satisfy the International Technology Roadmap for Semiconductors (ITRS) requirements for drive current in high-performance transistors. Amongst the prefer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9223296522dd2681a6bef8ac824c3d0
https://doi.org/10.1166/jctn.2008.2542
https://doi.org/10.1166/jctn.2008.2542
Autor:
Gennadi Bersuker, P. Zeitzoff, John R. Barker, Scott Roy, Asen Asenov, Jeremy R. Watling, Giulio Ferrari
Publikováno v:
Journal of Computational Electronics. 6:1-5
HfO2 based high-κ dielectrics are among the most likely candidates to replace SiO2 and the currently favoured oxinitride in the next generation of MOSFETs. High-κ materials allow the use of a thicker gate dielectric, maintaining the gate capacitanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49d7a4bb5031bad0c9f2b3f2ddff086c
https://doi.org/10.1007/s10825-006-0059-9
https://doi.org/10.1007/s10825-006-0059-9