Zobrazeno 1 - 10
of 55
pro vyhledávání: '"P. Sveshtarov"'
Akademický článek
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Autor:
Peter M. Rafailov, Peter K. Sveshtarov, Vladimir B. Mehandzhiev, Ivalina Avramova, Penka Terziyska, Minko Petrov, Boyko Katranchev, Haritun Naradikian, Stefan I. Boyadjiev, Csaba Cserháti, Zoltán Erdélyi, Imre M. Szilágyi
Publikováno v:
Molecules, Vol 27, Iss 6, p 1789 (2022)
Graphene films were grown by chemical vapor deposition on Cu foil. The obtained samples were characterized by Raman spectroscopy, ellipsometry, X-ray photoelectron spectroscopy and electron back-scatter diffraction. We discuss the time-dependent chan
Externí odkaz:
https://doaj.org/article/f498d1c4dc874b6ca9769564a4ba4a89
Publikováno v:
Acta Medica Bulgarica, Vol 45, Iss 1, Pp 11-15 (2018)
The aim of this study is to compare the pain intensity reduction between the mean radiation doses per session of gallium-aluminum-arsenide (GaAIAs) laser with superluminous diodes (SLD) in four of the most common pain-related chronic temporomandibula
Externí odkaz:
https://doaj.org/article/f683496aff67435fb1fc3656034faf4f
Publikováno v:
Acta Medica Bulgarica, Vol 42, Iss 2, Pp 36-41 (2015)
The objective of this study was to test the clinical effectiveness of the combined gallium-aluminum-arsenide laser (GaAlAs; 785 nm) and superluminiscent diods (SLD; 633 nm) phototherapy (MedX 1100 device) for the treatment of 62 patients with 7 of th
Externí odkaz:
https://doaj.org/article/9d7d81441e644a8a9c2574e31520c880
Akademický článek
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Akademický článek
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Autor:
B S Blagoev, D A Delibatov, V B Mehandzhiev, P Sveshtarov, P Terziyska, I Avramova, P M Rafailov
Publikováno v:
Journal of Physics: Conference Series. 2240:012002
Nanofilms of aluminium oxide Al2O3 (ALO) were grown on Si, Cu and graphene/Cu substrates by atomic layer deposition (ALD). Trimethylaluminium (TMA) and deionized (DI) water were used as precursors for the ALD process. In order to obtain the ALD tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d434fe22ec1eeddb0acd695c13457ac
https://doi.org/10.1088/1742-6596/2240/1/012002
https://doi.org/10.1088/1742-6596/2240/1/012002
Publikováno v:
Materials Research Bulletin. 31:1001-1005
Thermal and pulling conditions have been optimized in a laboratory Czochralski apparatus to yield optically homogeneous crystals of hexagonal Pb 5 GeO 4 (VO 4 ) 2 . The wavelength dependence of absorption coefficient was calculated from transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d094cca991918e69ef7c42e9c123b13
https://doi.org/10.1016/s0025-5408(96)00087-6
https://doi.org/10.1016/s0025-5408(96)00087-6
Publikováno v:
Materials Research Bulletin. 30:1201-1206
Bi 12 SiO 20 single crystals co-doped with first row transition metals and aluminum were grown from the melt by the Czochralski technique. Optimal growth conditions for optically homogeneous crystals have been established. Dopant molar concentrations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d116677d2bb4a4c7f7e72bfe2bbe2811
https://doi.org/10.1016/0025-5408(95)00130-1
https://doi.org/10.1016/0025-5408(95)00130-1
Autor:
G. Łuka, Blagoy Blagoev, Bartlomiej S. Witkowski, E Vlakhov, Dimitre Dimitrov, V Mehandzhiev, Tomasz A. Krajewski, E. Guziewicz, Boriana Tzaneva, P. Terziyska, Valentin Videkov, J Leclercq, P. Sveshtarov
Publikováno v:
Journal of Physics: Conference Series. 764:012004
In this work the ZnO:Al films of different thickness are grown on the Porous Anodic Alumina (PAA) and p-Si (100) substrates by Atomic Layer Deposition. The ZnO:Al films thicknesses are chosen appropriately in order to obtain complete filled pores as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca83e9dcd535de1043153718295a3092
https://doi.org/10.1088/1742-6596/764/1/012004
https://doi.org/10.1088/1742-6596/764/1/012004