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of 32
pro vyhledávání: '"P. Staubs"'
Akademický článek
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Autor:
S. R. Summerfelt, R. Bailey, P. Staubs, J. Rodriguez, K. Boku, Theodore S. Moise, M. Arendt, Gregory B. Shinn, K. Remack, J. Eliason, K. R. Udayakumar
Publikováno v:
Japanese Journal of Applied Physics. 47:2710-2713
Enhanced yield and reliability through process improvements, leading to a manufacturable process for a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12a6a3da919259b79bc3190c7047d123
https://doi.org/10.1143/jjap.47.2710
https://doi.org/10.1143/jjap.47.2710
Publikováno v:
2008 17th IEEE International Symposium on the Applications of Ferroelectrics.
The year 2007 was a breakout year for advanced F-RAM. Two products manufactured on Texas Instruments? 130nm ferroelectric memory process are now commercially available from Ramtron, and TI announced its intention to leverage the benefits of F-RAM in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e5482a7551f1e42e136d6703a255bd6
https://doi.org/10.1109/isaf.2008.4693961
https://doi.org/10.1109/isaf.2008.4693961
Autor:
K. R. Udayakumar, A. Haider, M. Depner, Theodore S. Moise, Sudhir K. Madan, K. Boku, J. Eliason, Hugh P. McAdams, R. Bailey, Gregory B. Shinn, K. Remack, D. Kim, P. Staubs, John A. Rodriguez, Scott R. Summerfelt, J. Gertas
Publikováno v:
2008 17th IEEE International Symposium on the Applications of Ferroelectrics.
Reliability data is presented for a 4Mb Ferroelectric Random Access Memory (F-RAM) embedded within a 130nm CMOS process. Write/read endurance in the device exhibits stable intrinsic bit properties through 2.7x1013 cycles. Data retention demonstrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d54d34dec58803718212347155c938e
https://doi.org/10.1109/isaf.2008.4693960
https://doi.org/10.1109/isaf.2008.4693960
Autor:
M. Depner, D. Kim, Theodore S. Moise, Scott R. Summerfelt, Hugh P. McAdams, J. Eliason, J. Rodriguez, J. Gertas, P. Staubs, Sudhir K. Madan, K. Remack, Gregory B. Shinn, K. R. Udayakumar, K. Boku, R. Bailey
Publikováno v:
2007 Non-Volatile Memory Technology Symposium.
Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4times1012 cycles shows no degradation of switched polarization. 10 year, 85degC, dat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cfa0ce9d209fb1d5cdfd448bef95d2a
https://doi.org/10.1109/nvmt.2007.4389948
https://doi.org/10.1109/nvmt.2007.4389948
Autor:
R. Bailey, J. Gertas, J. Rodriguez, M. Depner, Theodore S. Moise, D. Kim, Hugh P. McAdams, K. R. Udayakumar, J. Eliason, P. Staubs, K. Boku, Sudhir K. Madan, J. Groat, K. Remack, Scott R. Summerfelt
Publikováno v:
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.
Ferroelectric memories are the most promising alternative to traditional embedded nonvolatile memories, such as flash and EEPROMs, because of their fast read/write cycle time, non-volatile data retention, low voltage/low power operation and low numbe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3cf64712ec574ba9145ef0a6eb31ebd
https://doi.org/10.1109/isaf.2007.4393151
https://doi.org/10.1109/isaf.2007.4393151
Autor:
Gregory B. Shinn, R. Bailey, Theodore S. Moise, J. Rodriguez, K. Remack, S. R. Summerfelt, K. Boku, M. Arendt, P. Staubs, J. Eliason, J. Gertas, K. R. Udayakumar
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e571b762a2dae7e542738f5b8e97503
https://doi.org/10.7567/ssdm.2007.j-8-3
https://doi.org/10.7567/ssdm.2007.j-8-3
Akademický článek
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Autor:
Staubs, Melinda Odom
Publikováno v:
Social Studies Research & Practice (Board of Trustees of the University of Alabama); Fall2015, Vol. 10 Issue 3, p121-125, 5p
Akademický článek
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