Zobrazeno 1 - 10
of 19
pro vyhledávání: '"P. Saledas"'
Autor:
M Cobb, P. Saledas, W Struble, S. Shanfield, G. Jackson, M. Zaitlin, Michael G. Adlerstein, E. Tong, Robert A. Pucel
Publikováno v:
Solid-State Electronics. 38:1641-1644
A layout to minimize parasitic elements which reduce the common emitter Heterojunction Bipolar Transistor (HBT) gain and efficiency is described. Layout modifications are based upon consideration of the HBT device model that predicts better performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c8194472918948e34fea8d4de213c61
https://doi.org/10.1016/0038-1101(95)00054-w
https://doi.org/10.1016/0038-1101(95)00054-w
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 41:752-759
The authors determined that RF drain current degradation is responsible for the poor power performance of wide-recessed pseudomorphic high-electron-mobility transistors (PHEMTs). A model based on surface states was proposed to explain this phenomenon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5331bc51a2fcb0ddf3eead0eee7d0e74
https://doi.org/10.1109/22.234507
https://doi.org/10.1109/22.234507
Autor:
E. Tong, M.J. Schindler, B. Cole, D. Teeter, Michael G. Adlerstein, S. Shanfield, P. Saledas, R. Wohlert, G. Jackson
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
In this paper, we present results on millimeter-wave PIN diode switch arms and phase shifters fabricated in our HBT process line. The PIN diode is formed by the base-collector junction of the HBT and is therefore completely compatible with our conven
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33451bacce00a61afd6fc4775dd0d431
https://doi.org/10.1109/mwsym.1994.335430
https://doi.org/10.1109/mwsym.1994.335430
Autor:
S. Shanfield, A. Miquelarena, A. Platzker, C. Bedard, William E. Hoke, D. Atwood, P. Saledas, P. Lyman, J. Wendler, W. Boulais, J.C. Huang, L. Aucoin
Publikováno v:
IEEE Electron Device Letters. 14:456-458
A double-recessed 0.2- mu m-gate-length pseudomorphic HEMT (PHEMT) has been demonstrated with 500 mW of output power (833 mW/mm of gate periphery), 6-dB gain, and 35% power-added efficiency (PAE) at 32 GHz. At 44 GHz, the device exhibited 494 mW of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b88ec2a2b2683af06c991027c3e6ec3
https://doi.org/10.1109/55.244708
https://doi.org/10.1109/55.244708
Autor:
Mayank T. Bulsara, Eugene A. Fitzgerald, J. P. Bettencourt, W. K. Liu, J.R. LaRoche, C. D. Lee, T.E. Kazior, A. Torabi, P. S. Lyman, Dmitri Lubyshev, Theodore D. Kennedy, P. Saledas, William E. Hoke
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:C3H1-C3H4
GaAs pseudomorphic high electron mobility transistor (PHEMT) structures were grown by molecular beam epitaxy on germanium substrates and composite silicon template wafers incorporating silicon and germanium transferred layers. Windows were etched dow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e62100499df7fdbab454bd4369bc5dcd
https://doi.org/10.1116/1.3322737
https://doi.org/10.1116/1.3322737
Publikováno v:
MRS Proceedings. 181
The reliability of ohmic contacts to thin, heavily doped layers of GaAs is investigated. Pd/Ge/Au contacts to n-type GaAs display excellent electrical stability over extended periods of thermal stress. The contact resistance stays below 0.50Ω-mim du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16465a836b7a78584c5b60412ab0268f
https://doi.org/10.1557/proc-181-289
https://doi.org/10.1557/proc-181-289
Akademický článek
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Autor:
G. Flynn, G. Jackson, W. Hoke, Michael G. Adlerstein, M. Zaitlin, E. Tong, P. Saledas, P. Lyman, J.C. Huang
Publikováno v:
IEEE Electron Device Letters. 10:511-513
A 1/2- mu m gate-length pulse-doped pseudomorphic high-electron-mobility transistor (HEMT) grown by MBE, which exhibits a current-gain cutoff frequency of 62 GHz, is discussed. The maximum available gain cutoff frequency was greater than 150 GHz. A m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2257f5f9e5ec9ddfd9c53d9a6ece191
https://doi.org/10.1109/55.43120
https://doi.org/10.1109/55.43120
Akademický článek
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Akademický článek
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