Zobrazeno 1 - 10
of 224
pro vyhledávání: '"P. Saint-Gregoire"'
Autor:
P. Saint-Gregoire
Publikováno v:
Materials and Devices, Vol 7 (2023)
This “opinion article” presents the “dialogue”, namely the series of questions addressed to chatGPT and its outputs, on the question of citation index and other metrics associated with scientific publication. The AI is asked to explain basic
Externí odkaz:
https://doaj.org/article/6fe75b578d564192b00c781a9a6b4595
Publikováno v:
Materials and Devices, Vol 5, Iss 2 (2021)
Resistive Random-Access Memories (ReRAM) are an alternative way to create new memory devices. This is physically possible due to the existence in the material, of two resistive states clearly discreditable, as a function of voltage value and polarity
Externí odkaz:
https://doaj.org/article/82f3cfc3157c41638cc48026e7b9d3e5
Publikováno v:
Materials and Devices, Vol 5, Iss 2 (2021)
We review dielectric properties of BaZrO3/BaTiO3 (BZ/BT) superlattices deposited on a single-crystal MgO substrate, and having a period of 13.32 nm. These superlattices have specific properties distinguishing them from BZ or BT bulk materials, and fr
Externí odkaz:
https://doaj.org/article/f2b3b82aed9d467daa527af173a3665e
Akademický článek
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Akademický článek
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Good quality In2S3 films were grown by Dr Blade method from a powder synthesized in a chemical bath, and oxidized to obtain In2O3 films and films of intermediate composition. The oxidation process and kinetics are studied by means of thermogravimetri
Externí odkaz:
http://arxiv.org/abs/1806.03946
Autor:
Roca, Lidice Vaillant, Vigil, Elena, Forcade, Fresnel, Thami, Thierry, Adnani, Hania, Yacou, Christelle, Ayral, André, Saint-Grégoire, Pierre
Understanding mechanisms in DSSCs is fundamental for their improvement; this includes the nanocrystalline semiconducting layer behaviour. Different mesoporous TiO2 layers are fabricated and analyzed for possible use in DSSC solar cells. The preparati
Externí odkaz:
http://arxiv.org/abs/1503.09172
Tetragonal tungsten bronze (TTB) oxides are one of the most important classes of ferroelectrics. Many of these framework structures undergo ferroelastic transformations related to octahedron tilting deformations. Such tilting deformations are closely
Externí odkaz:
http://arxiv.org/abs/1302.3692
In2S3(1-x)O3x is known from preceding studies to have a bandgap varying continuously as a function of x, the reason why this solid solution is potentially interesting in the field of photovoltaics. In this work, we present results on oxidation of In2
Externí odkaz:
http://arxiv.org/abs/1301.3467
Autor:
Ondrejkovic, P., Kempa, M., Vysochanskii, Y., Saint-Gregoire, P., Bourges, P., Rushchanskii, K. Z., Hlinka, J.
Publikováno v:
Phys. Rev. B 86, 224106 (2012)
Ferroelectric phase transition in the semiconductor Sn2P2S6 single crystal has been studied by means of neutron scattering in the pressure-temperature range adjacent to the anticipated tricritical Lifshitz point (p=0.18GPa, T=296K). The observations
Externí odkaz:
http://arxiv.org/abs/1212.1674