Zobrazeno 1 - 10
of 33
pro vyhledávání: '"P. S. Wijewarnasuriya"'
Autor:
Gopal G. Pethuraja, John W. Zeller, Roger E. Welser, Ashok K. Sood, Harry Efstathiadis, Pradeep Haldar, Priyalal S. Wijewarnasuriya, Nibir K. Dhar
Publikováno v:
Sensors & Transducers, Vol 214, Iss 7, Pp 46-52 (2017)
Electro-optic infrared technologies and systems operating from ultraviolet (UV) to long-wave infrared (LWIR) spectra are being developed for a variety of defense and commercial systems applications. Loss of a significant portion of the incident signa
Externí odkaz:
https://doaj.org/article/474704ca94d94956a76da0a8d5bd22a9
Publikováno v:
Journal of Electronic Materials. 28:789-792
The p-type doping of Hg1−xCdxTe (MCT) has proven to be a significant challenge in present day MCT-based detector technology. One of the most promising acceptor candidates, arsenic, behaves as an amphoteric dopant which can be activated as an accept
Autor:
H. R. Vydyanath, Sivalingam Sivananthan, F. Aqariden, Jose M. Arias, P. S. Wijewarnasuriya, Majid Zandian, D. D. Edwall
Publikováno v:
Journal of Electronic Materials. 26:621-624
The results of arsenic incorporation in HgCdTe layers grown by molecular beam epitaxy (MBE) are reported. Obtained results indicate that arsenic was successfully incorporated as acceptors in MBE-HgCdTe layers after a low temperature anneal. Secondary
Publikováno v:
Journal of Crystal Growth. :647-652
The results of arsenic incorporation in HgCdTe layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-HgCdTe was carried out by a method called planar doping. Arsenic was successfully incorporated during the MBE growth
Publikováno v:
Journal of Electronic Materials. 25:1300-1305
Arsenic incorporation and doping in HgCdTe layers grown by molecular beam epitaxy (MBE) were examined in this paper. Arsenic incorporation into MBE-HgCdTe was carried out in two different ways: (1)ex-situ arsenic ion-implantation on indium-doped n-ty
Publikováno v:
Journal of Crystal Growth. 159:1136-1140
We report on the electrical and electro-optical properties of n- and p-type (211)B mercury cadmium telluride grown by molecular beam epitaxy for Cd composition ∼ 0.22. Grown layers show excellent structural qualities with DCRC FWHM of 25-40 arcsec.
Publikováno v:
Journal of Electronic Materials. 24:1211-1218
We report the results of the transport properties and the recombination mechanisms of indium-doped HgCdTe(211)B (x ≈ 23.0% ± 2.0%) layers grown by molecular beam epitaxy. We have investigated the origin(s) of the background doping limitation in th
Publikováno v:
Journal of Electronic Materials. 24:545-549
We have studied the minority-carrier lifetime on intentionally indium-doped (211)B molecular beam epitaxially grown Hg1-xCdxTe epilayers down to 80K with x ≈ 23.0% ± 2.0%. Measured lifetimes were explained by an Auger-limited band-to-band recombin
Publikováno v:
Journal of Applied Physics. 75:1005-1009
We report the recombination mechanisms of minority carrier lifetime in indium‐doped layers of (211)B Hg1−xCdxTe(x ≊ 23.0% ± 2.0%)n‐type grown by molecular beam epitaxy. Measured lifetimes were explained by an Auger limited band‐to‐band r
Publikováno v:
Journal of Applied Physics. 74:1096-1099
It is difficult to extract unique values of the Hall electron density, nH, and Hall mobility, μH, in indium‐doped Hg1−xCdxTe alloys usually in a region of weak magnetic fields where the Hall coefficient RH behaves anomalously. Since this is also