Zobrazeno 1 - 10
of 19
pro vyhledávání: '"P. S. Plekhanov"'
Autor:
A. R. Medeu, T. G. Tokmagambetov, A. L. Kokarev, L. A. Yeriskovskaya, T. L. Kirenskaya, P. A. Plekhanov, N. S. Plekhanov
Publikováno v:
Лëд и снег, Vol 57, Iss 2, Pp 261-268 (2017)
A need to estimate a hazard of a mudflow stream appearance in the glacial-nival zone of the Northern slope of Zailiyskiy Alatau (Kasakhstan) is now one of the really urgent problems. The objective of this study was to inves‑ tigate influence of gla
Externí odkaz:
https://doaj.org/article/bedd689663cf4e6db9051f19ee03930c
Publikováno v:
Journal of Applied Physics. 90:5388-5394
In silicon solar cell fabrication, impurity gettering from Si by an aluminum layer and indiffusion of Al for creating the back surface field (BSF) are inherently carried out in the same process. We have modeled these two processes and analyzed their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa7a2f92ac2219c464146dd60349da7e
https://doi.org/10.1063/1.1412575
https://doi.org/10.1063/1.1412575
Publikováno v:
Journal of Applied Physics. 86:2453-2458
Physical and numerical modeling of impurity gettering from multicrystalline Si for solar cell production has been carried out using Fe as a model impurity. Calculated change of nonradiative recombination coefficient of minority carriers in the course
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d17ab21490ccd815ce4b8f3ed12f9f4b
https://doi.org/10.1063/1.371075
https://doi.org/10.1063/1.371075
Publikováno v:
Journal of Applied Physics. 84:718-726
During Si crystal growth, nucleation and growth of voids and vacancy-type dislocation loops under Si vacancy supersaturation conditions have been modeled. From nucleation barrier calculations, it is shown that voids can be nucleated, but not dislocat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97ad9e51775082628d46e215ea7458dc
https://doi.org/10.1063/1.368128
https://doi.org/10.1063/1.368128
Autor:
E.I. Givargizov, E. V. Rakova, Paul C. Nordine, L. L. Aksenova, A.V. Kuznetsov, A.N. Stepanova, Victor V. Zhirnov, P. S. Plekhanov
Publikováno v:
Diamond and Related Materials. 5:938-942
Preparation and field-emission characteristics of silicon tips coated by diamond particles are described. The particles grew by a hot-filament CVD process preferentially on the very ends of the tips. An explanation is given for the preferential depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f413eea2aeaea6109b5e9029774a82f
https://doi.org/10.1016/0925-9635(96)00524-9
https://doi.org/10.1016/0925-9635(96)00524-9
Publikováno v:
Applied Surface Science. :117-122
Polycrystalline and single-crystal diamond coatings were grown on silicon field emitters by the hot filament CVD technique. The emission properties of both kinds of diamond coating were compared. Field emission from tips with a polycrystalline coatin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6b325b4cdf7696e0da97f7a8a516e03
https://doi.org/10.1016/0169-4332(95)00360-6
https://doi.org/10.1016/0169-4332(95)00360-6
Autor:
Victor V. Zhirnov, P. S. Plekhanov, A. V. Galdetsky, B. A. Belyavsky, U. T. Son, L.V. Bormatova, E.I. Givargizov
Publikováno v:
Applied Surface Science. :144-147
AuSi eutectic on the top of silicon whiskers demonstrated good emissivity at relatively low voltage. Both single tip emitters and arrays of tips were investigated. A maximum emission current of 300 μA was obtained from single-tip AuSi eutectic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44a5e065b077ff94f16a1ae942a6599
https://doi.org/10.1016/0169-4332(95)00362-2
https://doi.org/10.1016/0169-4332(95)00362-2
Autor:
A.N. Stepanova, E. V. Rakova, E.I. Givargizov, P. S. Plekhanov, Victor V. Zhirnov, A.N. Kiselev
Publikováno v:
Applied Surface Science. :24-30
Structural and field-emission studies of diamond-coated tips were performed. RHEED and HRTEM investigations have shown that diamond coatings are polycrystalline with average sizes of crystallites between 10 and 100 nm. Field-emission measurements dem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0538c3e3ac2a203188459fe9278aba6
https://doi.org/10.1016/0169-4332(94)00532-x
https://doi.org/10.1016/0169-4332(94)00532-x
Autor:
Teh Y. Tan, P. S. Plekhanov
Publikováno v:
Applied Physics Letters. 76:3777-3779
A quantitative model of the electrical activity of metallic precipitates in Si is formulated with an emphasis on the Schottky junction effects of the precipitate–Si system. Carrier diffusion and carrier drift in the Si space charge region are accou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee12d769c4f336ef908d18415c9b15c
https://doi.org/10.1063/1.126778
https://doi.org/10.1063/1.126778
Publikováno v:
Applied Physics Letters. 70:1715-1717
We have calculated the nucleation energy barrier of voids and vacancy (V) type dislocation loops in Si under V-supersaturation conditions. The barrier of V-type dislocation loops is higher than that of voids by more than one order of magnitude, with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e0781b8b8da771cefc4180bf0cb4982
https://doi.org/10.1063/1.118652
https://doi.org/10.1063/1.118652