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pro vyhledávání: '"P. S. Kopjev"'
Autor:
Nikolai A. Maleev, P. S. Kopjev, Zh. I. Alferov, I. A. Zamoryanskaya, V. T. Punin, V. M. Ustinov, S. G. Konnikov, M. A. Yagovkina, R. I. Ilkaev, Pavel N. Brunkov, A. A. Gutkin, A. V. Bobyl, Yu. G. Musikhin, D. A. Sakseev
Publikováno v:
Semiconductors. 40:687-690
The influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs transistor heterostructures has been studied by means of X-ray diffraction analysis and transmission electron microscopy. It was found that irradiation with doses exceeding ∼3 × 107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46dc3560d22319a656e9a61efd74ab06
https://doi.org/10.1134/s1063782606060145
https://doi.org/10.1134/s1063782606060145
