Zobrazeno 1 - 10
of 61
pro vyhledávání: '"P. Rieve"'
Publikováno v:
Journal of Non-Crystalline Solids. :1168-1172
Amorphous silicon (a-Si:H) based color detectors have matured to an established technology since the first color image sensor in thin film on ASIC (TFA) technology (ASIC=application specific integrated circuit) equipped with a trichomatic photo detec
Publikováno v:
IEEE Transactions on Electron Devices. 45:1393-1398
New types of a-Si(C):H thin-film multispectral detectors were designed and successfully fabricated. It was found that the controlling of drift length in the active regions provides a simple and useful criterion for the design, by the aid of which nov
Autor:
S. Coors, T. Lule, P. Rieve, S. Benthien, M. Sommer, H. Keller, H. Fischer, B. Schneider, Markus Böhm, K. Seibel, F. Blecher, J. Sterzel, A. Eckhardt, J. Schulte
Publikováno v:
1998 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.98CH36215).
Image sensors in TFA (Thin Film on ASIC) technology are composed of amorphous silicon (a-Si:H) thin film detectors on top of crystalline ASICs. A TFA prototype for automotive vision systems is presented which allows each pixel to adapt its individual
Autor:
B. Schneider, S. Benthien, Markus Böhm, H. Fischer, T. Lule, J. Schulte, P. Rieve, H. Keller, M. Sommer
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
TFA (Thin Film on ASIC) image sensors consist of an amorphous silicon (a-Si:H) based optical detector on top of an ASIC which performs signal readout or signal processing for each individual pixel. In this paper we present recent prototypes of image
Autor:
Markus Böhm, H. Keller, F. Motze, Konstantin Seibel, M. Hillebrand, F. Blecher, M. Wagner, P. Rieve, T. Lule, B. Schneider
Publikováno v:
MRS Proceedings. 557
An image sensor with enhanced sensitivity for near ultraviolet radiation (UVA) has been fabricated in TFA (Thin Film on ASIC) technology. The device employs an amorphous silicon pin detector optimized for UV detection by carbonization and layer thick
Autor:
P. Rieve, U. Efron, R. C. Lind, L. Humm, S. Benthien, M. Sommer, Jürgen Sterzel, T. Lule, E. Roth, H. Keller, B. Schneider, B. Van Uffel, Konstantin Seibel, Markus Böhm, F. Blecher, A. Eckhardt, F. Librecht
Publikováno v:
MRS Proceedings. 507
Image sensors in TFA (Thin Film on ASIC) technology have been successfully fabricated and tested. This paper provides a survey of TFA research results so far and outlines future perspectives. The properties of different a-Si:H b/w and color thin film
Autor:
B. Schneider, N. Wu, L. Humm, F. Blecher, U. Efron, H. Keller, T. Lule, M. Sommer, A. Eckhardt, M. Daniels, P. Rieve, M. Bohm, R. C. Lind, Huan Yen, S. Benthien
Publikováno v:
Advanced Microsystems for Automotive Applications 98 ISBN: 9783642721489
Advanced Microsystems for Automotive Applications 98 ISBN: 9783662387955
Advanced Microsystems for Automotive Applications 98 ISBN: 9783662387955
TFA (Thin Film on ASIC) image sensors consist of an amorphous silicon based optical detector on top of an ASIC which performs signal readout and signal processing. In this paper recent results on TFA prototypes are presented. The detector multilayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e92379e5c29038a4b0d9144bffc6d25
https://doi.org/10.1007/978-3-642-72146-5_15
https://doi.org/10.1007/978-3-642-72146-5_15
Publikováno v:
MRS Proceedings. 420
Amorphous silicon (a-Si:H) based n-i-p-i-n/p-i-n-i-p structures serve as two color detectors. These basic structures can be extended to obtain multi color detection. In this paper capacitance measurements in the dark and under various illumination co
Publikováno v:
MRS Proceedings. 420
A novel two terminal thin film photo diode for color detection has been developed. The device structure which is based on standard amorphous silicon nipin multilayers exhibits three or even more linearly independent spectral sensitivity peaks and pro
Publikováno v:
MRS Proceedings. 377
Band gap and defect engineered amorphous silicon based nipin photo diodes with bias controlled spectral response have been fabricated successfully. The devices exhibit good linearity over a wide illumination range and linearly independent spectral re