Zobrazeno 1 - 9
of 9
pro vyhledávání: '"P. R. Jubu"'
Autor:
Dr. Pannan I. Kyesmen, Dr. Joseph Simfukwe, Dr. Peverga R. Jubu, Dr. Adedapo O. Adeola, Prof. Mmantsae Diale
Publikováno v:
ChemElectroChem, Vol 11, Iss 16, Pp n/a-n/a (2024)
Abstract The concept of nanostructuring and doping of hematite (α‐Fe2O3) photoanodes have been widely engaged towards improving their photoelectrocatalytic (PEC) response. Here, a FeCl3‐based solution was modified with 0–10 % polyethylene glyc
Externí odkaz:
https://doaj.org/article/6c45844b38664b51a96de424907db4ce
Autor:
Peverga R. Jubu, E. Danladi, M.B. Ochang, O. Adedokun, C.C. Amadi, D.D. Hile, W.V. Zhiya, A.A. Iorokpen, Y. Yusof, F.K. Yam
Publikováno v:
Optical Materials: X, Vol 21, Iss , Pp 100291- (2024)
The rising demand for heterojunction materials stimulated by the great achievements of modern nanotechnology has triggered enormous interests in the investigation of their materials properties. Heterostructured ZnO/Ga2O3 has been deployed for differe
Externí odkaz:
https://doaj.org/article/e7869e223f5746b9b7a0e1e0c770caed
Autor:
Peverga R. Jubu, E. Danladi, U.I. Ndeze, O. Adedokun, S. Landi, Jr., A.J. Haider, A.T. Adepoju, Y. Yusof, O.S. Obaseki, F.K. Yam
Publikováno v:
Results in Optics, Vol 14, Iss , Pp 100606- (2024)
The Tauc method is the conventional technique for estimating the accurate optical bandgap energy of semiconductors using UV–Vis spectroscopy. The proper bandgap is usually determined by directly extrapolating the linear region of the optical spectr
Externí odkaz:
https://doaj.org/article/2d85fb19a22b4ac1b3a122ec5a0f3bee
Autor:
Augustine A. McAsule, Ngutor S. Akiiga, Joshua S. Ikwe, Newton F. Gesa, Michael O. Awoji, Victor W. Zhiya, Peverga R. Jubu, Terwase M. Aper, Jonathan T. Ikyumbur, Terver Daniel
Publikováno v:
Results in Optics, Vol 13, Iss , Pp 100505- (2023)
On glass substrates in a basic medium, Zn(1-x)SCux nanostructures were produced using a chemical bath approach for an adjusted dopant concentration (DC) (0.01–0.05 M) at 80 °C, and annealed at 300 °C for 2.5 h. The X-ray diffraction pattern revea
Externí odkaz:
https://doaj.org/article/4f0bf6e30b91439d9b8deaa7e3abb38c
Publikováno v:
Results in Optics, Vol 9, Iss , Pp 100273- (2022)
The use of the conventional Tauc’s method to determine optical bandgap energy from UV–vis spectroscopy data has been overemphasized for decades. However, a misuse of the Tauc’s formula in conjunction with the Kubelka-Munk function to determine
Externí odkaz:
https://doaj.org/article/46b068ae088d40a393e0779a1cf0244d
Publikováno v:
Optical and Quantum Electronics. 55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::920ed8d7c27e5d7dc0099ce353899986
https://doi.org/10.1007/s11082-023-04819-4
https://doi.org/10.1007/s11082-023-04819-4
Autor:
Fong Kwong Yam, P. R. Jubu
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:5266-5274
Ga2O3/ITO/glass photoelectrodes prepared by the CVD method has rarely been tested in the electrochemical cell for water splitting. In this study, we investigate the photoelectrolytic performance of Ga2O3/ITO-glass photocatalysts produced by the high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d96aff0450e36f2bdea5dce666158ce
https://doi.org/10.1166/jnn.2021.19456
https://doi.org/10.1166/jnn.2021.19456
Novel quinternary Cu2Cd1 − xMnxSnS4 (0 ≤ x ≤ 1) semiconductor thin films were deposited onto glass substrates at 300 ℃ by the spray pyrolysis technique to study the effect of Mn content on the structural, compositional, topographical, optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7caea2411d1393ab658452c534b8a76b
https://doi.org/10.21203/rs.3.rs-2324440/v1
https://doi.org/10.21203/rs.3.rs-2324440/v1
Deposition of Gallium Oxide Nanostructures at Low Substrate Temperature by Chemical Vapor Deposition
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:035006
Semiconductor nanostructures (NSs) are usually synthesized at short source-substrate distances where the substrate temperature is high using the chemical vapor deposition (CVD) technique. Herein, we report for the first time the growth of β -Ga2O3 N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad6373bd86851bc1e9ed313fceb4c4ae
https://doi.org/10.1149/2162-8777/ab7b47
https://doi.org/10.1149/2162-8777/ab7b47