Zobrazeno 1 - 10
of 35
pro vyhledávání: '"P. R. Duncombe"'
Autor:
R Duncombe, M Pawar
Publikováno v:
BMJ Open, Vol 11, Iss Suppl 1 (2021)
Externí odkaz:
https://doaj.org/article/f17cbabab43542a59b505b5154bb1926
Publikováno v:
Journal of Materials Research. 15:961-966
High-epsilon (HE) and ferroelectric (FE) perovskites such as (Ba, Sr)TiO3 and SrBi2Ta2O9 are attracting substantial interest for use in dynamic random-access memory and nonvolatile memory. In this paper, we describe how an easily decomposable PdO bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7729c97ac5943478d2eded346e4ac193
https://doi.org/10.1557/jmr.2000.0137
https://doi.org/10.1557/jmr.2000.0137
Autor:
Ioannis Kymissis, Sampath Purushothaman, Christos D. Dimitrakopoulos, P. R. Duncombe, Deborah A. Neumayer, Robert B. Laibowitz
Publikováno v:
Advanced Materials. 11:1372-1375
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6c952c6977ed81443a01328211bf470
https://doi.org/10.1002/(sici)1521-4095(199911)11:16<1372::aid-adma1372>3.0.co
https://doi.org/10.1002/(sici)1521-4095(199911)11:16<1372::aid-adma1372>3.0.co
Autor:
Deborah A. Neumayer, Thomas M. Shaw, Alfred Grill, Lisa Berndt, Robert B. Laibowitz, Charles T. Black, P. R. Duncombe
Publikováno v:
Integrated Ferroelectrics. 25:275-286
Multilayers of strontium bismuth tantalate (Sr0.9Bi2.2Ta2O9, SBT) with bismuth titanate (Bi4Ti3O12, BT), and SBT and strontium bismuth niobate (Sr0.9Bi2.2Nb2O9, SBN) with BT were prepared by chemical solution deposition (CSD). The CSD solutions were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82888187323174de95f7a2f763c09688
https://doi.org/10.1080/10584589908210178
https://doi.org/10.1080/10584589908210178
Autor:
P. R. Duncombe, David E. Kotecki, J. D. Baniecki, Katherine L. Saenger, H. Shen, Cyril Cabral, J. Lian, Robert B. Laibowitz, Timothy M. Shaw, Q. Y. Ma
Publikováno v:
Journal of the European Ceramic Society. 19:1457-1461
The leakage and dielectric relaxation currents of MOCVD Ba0·7Sr0·3TiO3 thin films with Pt electrodes after post top electrode anneals in oxygen and forming gas (95% Ar, 5% H2) were investigated. The Schottky barrier height for thermionic emission o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b39fc9d526a822f68798794e0c703206
https://doi.org/10.1016/s0955-2219(98)00449-x
https://doi.org/10.1016/s0955-2219(98)00449-x
Autor:
Timothy M. Shaw, Katherine L. Saenger, G. Kunkel, Cyril Cabral, J. Lian, Robert B. Laibowitz, J. D. Baniecki, Yandong Wang, H. Shen, P. R. Duncombe, M. Gutsche, David E. Kotecki, Richard Wise, Satish D. Athavale, Young-Jin Park
Publikováno v:
IBM Journal of Research and Development. 43:367-382
Thin films of barium-strontium titanate (Ba,Sr)TiO3 (BSTO) have been investigated for use as a capacitor dielectric for future generations of dynamic random-access memory (DRAM). This paper describes progress made in the preparation of BSTO films by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b1c56b0b66727c88637c17270fd8a4b
https://doi.org/10.1147/rd.433.0367
https://doi.org/10.1147/rd.433.0367
Autor:
Thomas M. Shaw, P. R. Duncombe, Robert J. Purtell, Robert B. Laibowitz, Deborah A. Neumayer, Alfred Grill
Publikováno v:
Integrated Ferroelectrics. 21:331-341
Bismuth titanate, Bi4Ti3O12 (BIT) was grown via chemical vapor deposition (CVD) and chemical solution deposition (CSD). The BIT films were grown by CVD, with triphenylbismuth and titanium isopropoxide. BIT films were fabricated by CSD using a solutio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe505715c8b0ac1c229e74823ce593df
https://doi.org/10.1080/10584589808202074
https://doi.org/10.1080/10584589808202074
Publikováno v:
ResearcherID
Recent progress in oxide perovskite thin-film technology has led to the discovery of a large negative magnetoresistance at room temperature in doped manganate perovskite thin films. These films may have potentials for magnetic sensing applications. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a21e25a523038d59153b99a329a650dd
https://doi.org/10.1147/rd.421.0089
https://doi.org/10.1147/rd.421.0089
Publikováno v:
Integrated Ferroelectrics. 18:297-309
We compared three chemical solution deposition routes to BaxSr1-xTiO3 (BST) films. A metal organic decomposition (MOD) solution composed of barium and strontium acetate, titanium diisopropoxide bis(acetylacetonate), dissolved in a mixture of acetic a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82b7f8b7d523780a1bef6c2d0fd72380
https://doi.org/10.1080/10584589708221707
https://doi.org/10.1080/10584589708221707
Autor:
John A. Ott, Thomas M. Shaw, Katherine L. Saenger, P. R. Duncombe, Alfred Grill, Robert B. Laibowitz, Robert J. Purtell, Deborah A. Neumayer
Publikováno v:
Integrated Ferroelectrics. 18:319-328
Crystalline Bi4Ti3O12 films were fabricated using a chemical solution deposition route. The spin solution was prepared with bismuth acetate and titanium isopropoxide dissolved in a mixture of acetic acid and 2-methoxyethanol. The effect of a titanium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::867e04bb4f48f20a378930b0745bbe71
https://doi.org/10.1080/10584589708221709
https://doi.org/10.1080/10584589708221709