Výsledky vyhledávání - "P. R. Chalker"

Akademický článek

Band alignments at Ga2O3 heterojunction interfaces with Si and Ge

Autor: J. T. Gibbon, L. Jones, J. W. Roberts, M. Althobaiti, P. R. Chalker, Ivona Z. Mitrovic, V. R. Dhanak

Publikováno v: AIP Advances, Vol 8, Iss 6, Pp 065011-065011-7 (2018)

Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using t

Externí odkaz: https://doaj.org/article/10987ab982fc486b9fb5456b8af23d0a

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Akademický článek

Atomic scale observation of threading dislocations in α-Ga2O3

Autor: Ross Mullen, Joseph W. Roberts, Paul R. Chalker, Rachel A. Oliver, Ben Hourahine, Fabien C. P. Massabuau

Publikováno v: AIP Advances, Vol 14, Iss 11, Pp 115018-115018-6 (2024)

This study presents a statistically significant investigation of threading dislocations in α-Ga2O3 using high-resolution transmission electron microscopy. All the dislocations, observed end on, exhibit a projected Burgers vector be=13⟨11̄00⟩, w

Externí odkaz: https://doaj.org/article/82f59929beec4bc38ebbd61f5953f2e7

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Akademický článek

Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics

Autor: P. R. Chalker, P. A. Marshall, K. Dawson, I. F. Brunell, C. J. Sutcliffe, R. J. Potter

Publikováno v: AIP Advances, Vol 5, Iss 1, Pp 017115-017115-7 (2015)

We report the photochemical atomic layer deposition of Al2O3 thin films and the use of this process to achieve area-selective film deposition. A shuttered vacuum ultraviolet (VUV) light source is used to excite molecular oxygen and trimethyl aluminum

Externí odkaz: https://doaj.org/article/ead30dd1be3441aaa957de941aac84ef

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Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

Autor: S. Taylor, P. R. Chalker, P. Taechakumput, M. Werner, C. Zhao, C. Z. Zhao, J. Tao

Publikováno v: Materials, Vol 5, Iss 6, Pp 1005-1032 (2012)

In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doajarticles::2e54d928d02b76619795f8db98469bbf
http://www.mdpi.com/1996-1944/5/6/1005

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Characterisation of Diamond and Diamond-Like Films

Autor: P. R. Chalker

Publikováno v: Diamond and Diamond-like Films and Coatings ISBN: 9781468459692

The development of both CVD and PVD technologies for the deposition of diamond and diamond-like carbon (DLC) films has provided a wide range of materials for potential applications in optical, electronic and tribological fields. The range of material

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::689c761c0c8607e4f0bfd622111f950d
https://doi.org/10.1007/978-1-4684-5967-8_7

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Characterisation of coatings and interfaces

Autor: P. R. Chalker

Publikováno v: Advanced Surface Coatings: a Handbook of Surface Engineering ISBN: 9789401053525
Advanced Surface Coatings: a Handbook of Surface Engineering

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a9270a5e3a3f0c1d5fad4b901051e13
https://doi.org/10.1007/978-94-011-3040-0_11

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Akademický článek

Deposition of Pr- and Nd-aluminate by Liquid Injection MOCVD and ALD Using Single-Source Heterometallic Alkoxide Precursors.

Autor: Jeffrey M. Gaskell, Szymon Przybylak, Anthony C. Jones, Helen C. Aspinall, Paul R. Chalker, Kate Black, Richard J. Potter, Pouvanart Taechakumput, Stephen Taylor

Publikováno v: Chemistry of Materials; Sep2007, Vol. 19 Issue 19, p4796-4803, 8p

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Akademický článek

MOCVD and ALD of High-k Dielectric Oxides Using Alkoxide PrecursorsWe are grateful to the EPSRC and Epichem Limited for support of this work. We are also grateful to Prof. M. Ritala, Dr. K. Kukli, Dr. R. Matero and Prof. M. Leskelä (University of Helsinki, Finland) for many useful discussions on ALD.

Autor: A. C. Jones, H. C. Aspinall, P. R. Chalker, R. J. Potter, T. D. Manning, Y. F. Loo, R. O'Kane, J. M. Gaskell, L. M. Smith

Publikováno v: Chemical Vapor Deposition; Mar2006, Vol. 12 Issue 2/3, p83-98, 16p

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Akademický článek

Deposition of HfO2 Films by Liquid Injection MOCVD Using a New Monomeric Alkoxide Precursor, [Hf(dmop)4]We are grateful to Epichem Limited and the EPSRC for support of this work. We are also grateful to Dr. G. W. Critchlow (Institute of Surface Science and Technology, University of Loughborough, UK) for provision of the AES data.

Autor: Y. F. Loo, R. O'Kane, A. C. Jones, H. C. Aspinall, R. J. Potter, P. R. Chalker, J. F. Bickley, S. Taylor, L. M. Smith

Publikováno v: Chemical Vapor Deposition; Jul2005, Vol. 11 Issue 6/7, p299-305, 7p

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Akademický článek

Fabrication of epitaxial III-nitride cantilevers on silicon (1 1 1) substrates.

Autor: S. Davies, T. S. Huang, R. T. Murray, M. H. Gass, A. J. Papworth, T. B. Joyce, P. R. Chalker

Publikováno v: Journal of Materials Science: Materials in Electronics; Nov2004, Vol. 15 Issue 11, p705-710, 6p

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