Zobrazeno 1 - 8
of 8
pro vyhledávání: '"P. R. C. Stevens"'
Publikováno v:
IEE International Symposium Engineering Education: Innovations in Teaching, Learning and Assessment.
Amongst many schemes to relieve curriculum pressure and to allow delivery of a variety of related personal transferable skills and knowledge has been the development of the project-work theme. Here practice amongst course providers has varied conside
Autor:
P R C Stevens, B R Critchley
Publikováno v:
Journal of Physics D: Applied Physics. 11:491-498
Rutherford back-scattering and X-ray photoelectron spectroscopy (XPS) have been used to study the stoichiometry and chemical composition of RF-sputtered thin films of ZnS. The results show that stoichiometry of the starting material is no guarantee o
Autor:
A W Tinsley, P R C Stevens
Publikováno v:
Journal of Physics C: Solid State Physics. 4:L150-L153
In the analysis of electrical measurements on ion implanted layers in semi-conductors it is important to take account of the possibility of incomplete donor or acceptor ionization, and the fact that the material is likely to degenerate. Methods for c
Autor:
P. L. F. Hemment, P. R. C. Stevens
Publikováno v:
Journal of Applied Physics. 40:4893-4901
Consideration of the factors influencing electron radiation damage has led to the development of a computer program to predict damage rates as a function of electron beam energy and crystal orientation with respect to the beam. Experimental results u
Autor:
P. R. C. Stevens
Publikováno v:
Journal of Applied Physics. 39:1561-1563
The distribution of electron‐radiation damage defects with depth has been calculated from recent measurements of electron angular dispersion and energy loss in silicon combined with experimental measurements of damage rate as a function of electron
Autor:
P L F Hemment, P R C Stevens
Publikováno v:
Journal of Physics E: Scientific Instruments. 2:19-21
The requirements of specimens for low energy electron radiation damage studies are becoming increasingly exacting. A specimen preparation technique is described which overcomes many of the practical problems encountered in preparing thin specimens fr
Publikováno v:
Physics and Chemistry of Electrons and Ions in Condensed Matter ISBN: 9789400964426
The threshold voltage of Pd/SiO2/Si devices alters markedly on exposure to hydrogen, making them useful gas detectors. Initially we have observed response ~ 5mV for 100 ppm partial pressure of H2 followed by a “forming” process during which the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6359fba1e465f99d45565f8881075fa1
https://doi.org/10.1007/978-94-009-6440-2_57
https://doi.org/10.1007/978-94-009-6440-2_57
Autor:
R Gobbett, P.H. White, P.T. Stroud, D S Mather, P F Bampton, P R C Stevens, L E Collins, J.L. Perkin, P. Fieldhouse, N E Coles, S W Le Flem, E M Gunnersen, J G Perkins
Publikováno v:
Physics Bulletin. 22:555-555
Although the Institute appears to us to serve with some success the scientific interests of its members, we can find no evidence from Physics Bulletin that it is active in promoting the status and salaries of physicists. The government, the main empl