Zobrazeno 1 - 10
of 31
pro vyhledávání: '"P. Potyraj"'
Autor:
Marek Potyraj
Publikováno v:
Acta Iuris Stetinensis, Vol 15 (2016)
The subject of deliberations undertaken in the following paper is the obligation relationship between the investor (ordering party) and the executor which arises from concluding the construction work contract by those parties after performing proceed
Externí odkaz:
https://doaj.org/article/3ee5382f65c846449341632d382dedee
Autor:
Marek Potyraj
Publikováno v:
Acta Iuris Stetinensis, Vol 11 (2015)
The investment and construction activity is generally governed by administrative provisions, as within the construction process administrative and legal procedures are of utmost importance. Provisions of multiple normative acts are applicable to issu
Externí odkaz:
https://doaj.org/article/2a9fb308faa14a9c82f4ad5cd4daf5d4
Autor:
Jeremy Junghans, Megan Snook, Ty McNutt, H. Hearne, Victor Veliadis, Charles Scozzie, P. Potyraj
Publikováno v:
International Journal of Power Management Electronics, Vol 2008 (2008)
SiC VJFETs are excellent candidates for reliable high-power/temperature switching as they only use pn junctions in the active device area where the high-electric fields occur. VJFETs do not suffer from forward voltage degradation, exhibit excellent s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd8eb0fc8f6874302fabb1492694f540
https://doi.org/10.1155/2008/523721
https://doi.org/10.1155/2008/523721
Autor:
H. Hearne, Charles Scozzie, Megan Snook, Aivars J. Lelis, P. Potyraj, Victor Veliadis, T. McNutt
Publikováno v:
IEEE Electron Device Letters. 29:1325-1327
A normally on 4H-SiC vertical-junction field-effect transistor (VJFET) of 6.8-mm2 active area was manufactured in seven photolithographic levels with no epitaxial regrowth and a single masked ion-implantation event. The VJFET exhibits low leakage cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5399aec3463fddba8bd3cfe74cb59de0
https://doi.org/10.1109/led.2008.2006766
https://doi.org/10.1109/led.2008.2006766
Publikováno v:
IEEE Electron Device Letters. 29:1132-1134
A high-voltage normally ON 4H-SiC vertical junction field-effect transistor (VJFET) of 0.143- cm2 active area was manufactured in seven photolithographic levels with no epitaxial regrowth and with a single masked ion-implantation event. The VJFET exh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::066a4526259c81c6da5e90fc46184f2a
https://doi.org/10.1109/led.2008.2002907
https://doi.org/10.1109/led.2008.2002907
Publikováno v:
2007 IEEE Vehicle Power and Propulsion Conference.
SiC VJFETs are excellent candidates for reliable high power/temperature switching as they only use PN junctions in the active device area where the high electric fields occur. VJFETs do not suffer from forward voltage degradation, exhibit excellent s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::527a2f5aabd965bc61c4fa945c2fd892
https://doi.org/10.1109/vppc.2007.4544129
https://doi.org/10.1109/vppc.2007.4544129
Autor:
Potyraj, Paul
Publikováno v:
Solid-State Circuits Magazine, IEEE; 2023, Vol. 15 Issue: 3 p101-102, 2p
Autor:
Veliadis, Victor, McNutt, Ty, Snook, Megan, Hearne, Harold, Potyraj, Paul, Junghans, Jeremy, Scozzie, Charles
Publikováno v:
International Journal of Power Management Electronics; 2008, p1-8, 8p, 2 Color Photographs, 2 Diagrams, 13 Graphs
Akademický článek
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Autor:
Veliadis, Victor, Hearne, Harold, McNutt, Ty, Snook, Megan, Potyraj, Paul, Scozzie, Charles J.
Publikováno v:
Materials Science Forum; March 2009, Vol. 615 Issue: 1 p711-714, 4p