Zobrazeno 1 - 10
of 24
pro vyhledávání: '"P. Pisecny"'
Publikováno v:
Communications, Vol 8, Iss 1, Pp 25-28 (2006)
MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm2 and 1010 cm2 were investigated by capacitance measuring methods (C-V, C-t), completed by quasistatic low-frequency C-V and DLTS measurements.The irradiated
Externí odkaz:
https://doaj.org/article/5ff8c730a0e54fd2acdeb159b345e85c
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 269-272 (2004)
The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has
Externí odkaz:
https://doaj.org/article/bfb96ccf49ac472c91c7709cfb9ec855
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 5, Iss 1, Pp 334-336 (2006)
The article presents the results of capacitance measurements on MOS structures with a silicon substrate that wasdoped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energydistribution of the tr
Externí odkaz:
https://doaj.org/article/7d8c46618c85487f989907aff5f763b5
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 305-307 (2004)
The quality of momentus technological steps in unipolar power devices manufactoring was examine by means of capacitance and current measurements using a metal-oxide-semiconductor capacitors (MOS-C). From the low- (If) and high-frequency (hf) capacita
Externí odkaz:
https://doaj.org/article/6e22d461a0ad4fff96af0b260be15c49
Autor:
A. Abrutis, Kristína Hušeková, Juan P. Espinós, Alica Rosová, K. Cico, Mindaugas Lukosius, R. Luptak, Edmund Dobročka, P. Pisecny, Karol Fröhlich
Publikováno v:
Materials Science in Semiconductor Processing. 9:1065-1072
We have prepared rare earth oxides based MOSFET gate stacks using metal-organic chemical vapour deposition, MOCVD. Gd2O3, La2O3, Nd2O3 and Pr6O11 films with thickness 3–20 nm were deposited on silicon substrate at 500 °C. The films were characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09d64ec17beeab1823c8b9e0a9467cb3
https://doi.org/10.1016/j.mssp.2006.10.025
https://doi.org/10.1016/j.mssp.2006.10.025
Autor:
J. Soltys, P. Pisecny, Karol Fröhlich, L. Harmatha, Kristína Hušeková, Juan P. Espinós, Matej Jergel, D. Machajdík, Jan Jakabovic
Publikováno v:
Materials Science in Semiconductor Processing. 7:231-236
We have investigated properties of insulating lanthanum oxide (La2O3) films in connection with the replacement of silicon oxide (SiO2) gate dielectrics in new generation of CMOS devices. The La2O3 layers were grown using metal organic chemical vapour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e78798cfdd267b16b5392ecadbae261
https://doi.org/10.1016/j.mssp.2004.09.020
https://doi.org/10.1016/j.mssp.2004.09.020
Autor:
M. Tapajna, M. Benkovic, P. Ballo, L. Harmatha, Lubica Stuchlikova, Jan Jakabovic, P. Pisecny
Publikováno v:
2006 International Conference on Advanced Semiconductor Devices and Microsystems.
Nitrogen introduced into a silicon substrate by the Czochralski method brought about an increase in the density of Si-SiO2 interface traps and in the density of electrically active defects in Si by an enhanced nucleation of oxygen precipitates. Rapid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7d1fc54ec29b14d01d5db37e5e04191
https://doi.org/10.1109/asdam.2006.331149
https://doi.org/10.1109/asdam.2006.331149
Autor:
Bailey, Ashley, Brennan, Jason, Calarco, Antonino, Clarke, Kevin, Edwards, Will, Fujiwara, Catherine, Kalan, Amir, Kruja, Julia, McInnes-Greenberg, Emily, Pisecny, Anna
Publikováno v:
Perspectives on Urban Education; Summer2014, Vol. 11 Issue 2, p1-14, 14p
Autor:
Simon, Rob, Bailey, Ashley, Brennan, Jason, Calarco, Antonino, Clarke, Kevin, Edwards, Will, Fujiwara, Catherine, Kalan, Amir, Kruja, Julia, McInnes-Greenberg, Emily, Pisecny, Anna
Publikováno v:
Penn GSE Perspectives on Urban Education; Summer2014, Vol. 11 Issue 2, p90-106, 17p
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