Zobrazeno 1 - 10
of 171
pro vyhledávání: '"P. Panayotatos"'
Autor:
E. Aperathitis, C.G. Scott, A.C. Varonides, D. Sand, Maria Androulidaki, P. Panayotatos, Zacharias Hatzopoulos, V. Foukaraki
Publikováno v:
Solar Energy Materials and Solar Cells. 70:49-69
The performance of Al 0.36 Ga 0.64 As p/i/n solar cells with multiple quantum wells (MQW) of GaAs/Al 0.36 Ga 0.64 As in the i-region has been investigated at various temperatures, ranging from −10°C to 100°C, and compared with that of conventiona
Publikováno v:
Materials Science and Engineering: B. 80:164-167
In this study we investigate the appearance of etch pits and their effect on the ECV doping profiles of PM-HEMT structures grown by MOCVD and MBE. In some samples, etch-pits were observed after the etching of only 20 nm of the top layer. The observed
Publikováno v:
Microelectronics Journal. 32:1-9
A silicon micromachined bearing was designed and fabricated consisting of a pair of self-aligning v-grooves. The two Si v-grooves were bonded together to form the three-dimensional structure through solder bumps of 75 μm diameter that provide alignm
Publikováno v:
Materials Science and Engineering: B. 66:141-145
In the context of a comparative study of MBE and MOCVD PM-HEMT structures on 3″ GaAs substrates, utilization of photoreflectance indicated that the technique can provide substantial information both non-destructively as well as at room temperature.
Publikováno v:
Materials Science and Engineering: B. 66:92-96
This work presents a comparison of DC, RF and power characteristics at high frequency as well as a comparison of the uniformity of these parameters across each wafer in pseudomorphic high electron mobility transistor structures grown by MBE and MOCVD
Publikováno v:
Microelectronic Engineering. :567-573
We have studied the uniformity of both the structure and of the device characteristics of PM-HEMTs on (001) GaAs substrates. The structure uniformity was studied by photoreflectance modulation spectroscopy (PR) at room temperature and photoluminescen
Publikováno v:
Materials Science and Engineering: B. 51:85-89
Al 0.36 Ga 0.64 As p-i-n solar cells with multiple quantum wells (MQW) GaAs/Al 0.36 Ga 0.64 As in the i-region have been tested at various temperatures, ranging from - 10 to 100°C, and compared with conventional solar cells composed of either the qu
Autor:
P. Panayotatos, Alexandros Georgakilas, H. Krasny, Elias Aperathitis, E. Löchtermann, Ch. Papavassiliou
Publikováno v:
Materials Science and Engineering: B. 44:351-354
Silicon substrates were cut at tilt angles ranging from 0 to 9 ° off the (100) plane, and heteroepitaxial GaAs layers were grown by molecular beam epitaxy (MBE). The d.c. and RF performance of MESFET devices defined on these layers was used as a mea
Autor:
M. Lagadas, N. Kornilios, Maria Androulidaki, Aris Christou, P. Panayotatos, Zacharias Hatzopoulos
Publikováno v:
Materials Science and Engineering: B. 44:355-358
We have investigated the dependence of the conductive layer width and Hall mobility in n-GaAs/LT-GaAs structures on the conditions of low temperature (LT) buffer growth and on annealing parameters. Both the conductive layer width, as determined from
Publikováno v:
Materials Science and Engineering: B. 44:383-386
The GaAs/Si heterojunction band lineup has been investigated using capacitance versus voltage ( C-V ) and current versus voltage ( I-V ) measurements on n-GaAs/p-Si (n ≈ 10 16 cm −3 ) heterojunction diodes. Such an approach was possible because o