Zobrazeno 1 - 10
of 24
pro vyhledávání: '"P. Paduschek"'
Autor:
Paduschek, Vilma
Publikováno v:
Psychologie und Gesellschaftskritik, 19, 4, 53-71
'Die Autorin setzt sich in ihrem Beitrag mit Rollenklischees von Mädchen und Jungen in der Fernsehwerbung auseinander. Dazu wurden 106 Werbespots mit Produkten für Kinder oder Kindern selbst als Werbeträger untersucht. Die fast durchgehend geschle
Externí odkaz:
http://www.ssoar.info/ssoar/handle/document/26675
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1991, 02 (C2), pp.C2-183-C2-183. ⟨10.1051/jp4:1991222⟩
Journal de Physique IV Proceedings, EDP Sciences, 1991, 02 (C2), pp.C2-183-C2-183. ⟨10.1051/jp4:1991222⟩
In situ ellipsometry enables "on line" continuous monitoring of film development within the deposition chamber. Furthermore in situ ellipsometry not only provides thickness monitoring, but is an excellent tool for determining refractive index and abs
High resolution imaging microellipsometry of soft surfaces at 3 μm lateral and 5 Å normal resolution
Publikováno v:
Applied Physics Letters. 72:2930-2932
We report on the design of an imaging microellipsometer enabling the generation of maps of the two ellipsometric angles Δ and Ψ. Areas of 60×200 μm2 are imaged at a rate of 1–2 images per minute. By working at angles (45°) much smaller than th
Publikováno v:
SMPTE Motion Imaging Journal; Oct/Nov2017, Vol. 126 Issue 8, p47-55, 9p
Publikováno v:
Micro System Technologies 90 ISBN: 9783642456800
In research and development as well as production, surface and thin film examinations are frequently needed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7abfeff957cd01db41209d5ecb71ea33
https://doi.org/10.1007/978-3-642-45678-7_31
https://doi.org/10.1007/978-3-642-45678-7_31
Autor:
TAMME, M., KAMILLI, R., PADUSCHEK, P., MONTGOMERY, P., ILLSLEY, S., TAMME, M., KAMILLI, R., PADUSCHEK, P., MONTGOMERY, P., ILLSLEY, S.
Publikováno v:
Journal de Physique IV - Proceedings; October 1992, Vol. 2 Issue: 1 pC2-183-C2-183, 1832182p
Proton-proton scattering as a tool for hydrogen profiling in thin films for semiconductor technology
Autor:
P. Eichinger, P. Paduschek
Publikováno v:
Nuclear Instruments and Methods in Physics Research. 191:75-79
Hydrogen depth profiles have been measured in thin layers, which are currently of great interest for semiconductor technology, using the p−p scattering method, originally demostrated by Cohen et al. [1] for relatively thick metallic foils using 17
Publikováno v:
Nuclear Instruments and Methods in Physics Research. 199:421-425
The hydrogen content of plasma deposited amorphous silicon thin films on silicon has been determined as a function of annealing parameters (200–700°C, 12 h) using the proton-proton scattering method. It is shown that hydrogen is released with an a
Publikováno v:
Thin Solid Films. 110:291-304
Hydrogen concentrations in amorphous silicon (a-Si) prepared by electron beam evaporation or plasma deposition as well as in plasma-deposited silicon nitride were measured as a function of annealing conditions using the photon-proton scattering metho
Publikováno v:
Biological Chemistry; February 1994, Vol. 375 Issue: 2 p99-104, 6p