Zobrazeno 1 - 7
of 7
pro vyhledávání: '"P. N. Okholin"'
Autor:
A. V. Vasin, D. Kisyl, V. G. Stepanov, A. Korchovyy, Oleg Yu Khyzhun, Tamara M. Nazarova, O. M. Slobodian, A.V. Rusavsky, O. Yo. Gudymenko, Roman Yatskiv, Andrii Nikolenko, Petr M. Lytvyn, P. N. Okholin, Alexey Nazarov, Yu.V. Gomeniuk
Publikováno v:
ECS Transactions. 97:151-156
Carbon nanoporous thin films are very attractive for application in fields of supercapacitors, fuel cells, gas sensors and others. However due to it very high resistance an employment of this material for resistance gas sensor is problematic. At the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0290fac9d3ed9b268650a9b3b2fc396a
https://doi.org/10.1149/09705.0151ecst
https://doi.org/10.1149/09705.0151ecst
Autor:
Karim Cherkaoui, T.M. Nazarova, Alexei Nazarov, T. E. Rudenko, Paul K. Hurley, Vladimir Djara, Yu.V. Gomeniuk, V. I. Glotov, Y. Y. Gomeniuk, P. N. Okholin
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q24-Q31
In this paper, we study the effect of low-temperature RF plasma treatment in forming gas (10%H2+90%N2) on the electrical characteristics of junctionless MOSFETs with n-In0.53Ga0.47As channel and an Al2O3 gate dielectric. The impact of plasma power de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a685cad7a97c8fef77e03c21e80faae
https://doi.org/10.1149/2.0181902jss
https://doi.org/10.1149/2.0181902jss
Autor:
T.M. Nazarova, Yuri V. Gomeniuk, Vladimir I. Glotov, Brenda Long, Alexei Nazarov, Ray Duffy, P. N. Okholin, Noel Kennedy
Publikováno v:
2019 IEEE 9th International Conference Nanomaterials: Applications & Properties (NAP).
For the first time a combination of monolayer doping with RF plasma treatment was used for low-temperature doping of Si nanowires (NW). To study the doping effect, the back-gate MOSFET formed with Si nanowires fabricated in silicon-on-insulator wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3374867f6f69a99471a648f18c86534
https://doi.org/10.1109/nap47236.2019.216943
https://doi.org/10.1109/nap47236.2019.216943
Autor:
A.V. Rusavsky, T.M. Nazarova, P. N. Okholin, O. Gudymenko, O.Yu. Khyzhun, A.V. Vasin, Yu.V. Gomeniuk, Alexey Nazarov, S.V. Malyuta, V. I. Glotov, Petr M. Lytvyn, O. M. Slobodian
Publikováno v:
Applied Surface Science. 544:148876
The chemical and structural modification of thin nanoporous graphitized carbon film was achieved by RF plasma treatment in the atmosphere of Ar, N2 and H2 + N2. The effect of carbon surface modification on the resistive sensitivity of gas sensor to w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46c22f4bbcc75bc5aced2704a7998a41
https://doi.org/10.1016/j.apsusc.2020.148876
https://doi.org/10.1016/j.apsusc.2020.148876
Autor:
Sergiy B. Kryvyi, Petro M. Lytvyn, Enrico Napolitani, Alexei Nazarov, V.S. Lysenko, I. E. Golentus, P. N. Okholin, Volodymyr O. Yukhymchuk, V. P. Kladko, Yurii V. Gomeniuk, Volodymyr I. Glotov, Ray Duffy
Radio-frequency (RF) hydrogen plasma treatment, thermal annealing in a furnace, and rapid thermal annealing of high-dose P+ ion implanted p-type Ge layers have been studied by Raman scattering spectroscopy, atomic force microscopy, secondary ion mass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25094c33c8858e151df1e60d840e6db3
http://hdl.handle.net/11577/3251027
http://hdl.handle.net/11577/3251027
Autor:
V. I. Glotov, Alexei Nazarov, Volodymyr O. Yukhymchuk, P. N. Okholin, T.M. Nazarova, Ray Duffy, Petr M. Lytvyn, V. S. Lysenko, Enrico Napolitani
RF hydrogen plasma treatment, rapid thermal annealing and thermal annealing of high-dose implanted amorphized p-type Ge layers have been studied by Raman scattering spectroscopy, AFM, SIMS and electrochemical capacitance-voltage profiling. It is show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ff3f5fa80cc731b172475f81e176338
http://hdl.handle.net/11577/3220362
http://hdl.handle.net/11577/3220362
Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy
Autor:
P. N. Okholin, I. N. Verovsky, Y. Ishikawa, Konstantin Kholostov, V. P. Bondarenko, A. V. Vasin, V. S. Lysenko, Alexey Nazarov
Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 Ω cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abe3e9887f1be237bf89b17b34933093
http://hdl.handle.net/11573/652838
http://hdl.handle.net/11573/652838