Zobrazeno 1 - 10
of 11
pro vyhledávání: '"P. N. Grillot"'
Publikováno v:
Journal of Applied Physics. 92:6582-6589
Cu–Pt ordering is studied with cross-sectional transmission electron microscopy in p-type, n-type, and nominally undoped InAlP and In(AlGa)P layers. These different doping conditions allow us to investigate the effect of acceptor doping with magnes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5cc1a68eb16029bfc3c82879b5a9085
https://doi.org/10.1063/1.1518760
https://doi.org/10.1063/1.1518760
Publikováno v:
Journal of Applied Physics. 91:4891-4899
Acceptor segregation is investigated as a function of compositional difference, Δx, between adjacent layers in (AlxGa1−x)0.5In0.5P heterostructures. Magnesium, Zn, Be, and Mn acceptor species are all shown to segregate out of the high band gap Al-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f186507eff90aae94a5d51fb4393da4a
https://doi.org/10.1063/1.1461060
https://doi.org/10.1063/1.1461060
Autor:
Steven A. Maranowski, P. N. Grillot, Changhua Chen, A. J. Moll, Herman C Chui, T. D. Osentowski, B. W. Liang, J.-W. Huang, M. J. Peanasky, S. A. Stockman, C. P. Kuo
Publikováno v:
Journal of Electronic Materials. 28:916-925
Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::760c11f732a369fc6ce07c1dca943f09
https://doi.org/10.1007/s11664-999-0220-x
https://doi.org/10.1007/s11664-999-0220-x
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:3283-3287
Large substrate surface temperature decreases are observed during molecular beam epitaxy growth onto small indium bonded substrates, due to coating of the molybdenum block. These large temperature transients, along with other difficulties associated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03462f4b43fab6cda2b606317ff792ff
https://doi.org/10.1116/1.580227
https://doi.org/10.1116/1.580227
Publikováno v:
Journal of Applied Physics. 80:2823-2832
Strain‐relaxed, compositionally graded Ge0.3Si0.7/Si heterostructures grown by ultrahigh vacuum chemical vapor deposition at 650 °C are shown to display a consistent change from p‐type to n‐type conductivity as a function of rapid thermal anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fba8f8b0fefbed9052fc8830a129afc
https://doi.org/10.1063/1.363200
https://doi.org/10.1063/1.363200
Publikováno v:
Journal of Electronic Materials. 25:1028-1036
Electron traps, hole traps, and the dominant recombination-generation (R-G) centers have been investigated with deep level transient spectroscopy and current-voltage/temperature measurements in heteroepitaxial GexSi1-x alloys with x ranging from 0.15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::745d8bbae90547c65afcd71d93c7c844
https://doi.org/10.1007/bf02659898
https://doi.org/10.1007/bf02659898
Publikováno v:
Journal of Applied Physics. 77:3248-3256
The capture kinetics and trapping properties of a dislocation related electron trap detected in strain‐relaxed, compositionally graded Ge0.3Si0.7/Si grown by rapid thermal chemical‐vapor deposition are investigated by deep‐level transient spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc9012d983e4cfbb8d52238aa1e39ab9
https://doi.org/10.1063/1.358678
https://doi.org/10.1063/1.358678
Publikováno v:
Journal of Applied Physics. 77:676-685
Strain‐relaxed Ge0.3Si0.7/Si, grown by rapid thermal chemical‐vapor deposition, has been investigated with deep‐level transient spectroscopy (DLTS) and bias‐dependent electron‐beam‐induced current (EBIC). A single electron trap and severa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1fa88e9e6ca7d18c222d5e007be92da
https://doi.org/10.1063/1.359054
https://doi.org/10.1063/1.359054
Autor:
P. N. Grillot, Steven A. Ringel
Publikováno v:
Applied Physics Letters. 69:2110-2112
Deep hole traps introduced by dislocations and other strain relaxation‐induced defects in relaxed, epitaxial Ge0.30Si0.70 layers grown on Si are quantitatively compared to hole traps introduced by plastic deformation of bulk Si. Deep level transien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db787195fd6a25cf70e3af45c4199324
https://doi.org/10.1063/1.116896
https://doi.org/10.1063/1.116896
Autor:
P. N. Grillot, Steven A. Ringel
Publikováno v:
MRS Proceedings. 442
Substantial improvements in the quality of relaxed, heteroepitaxial GeSi layers have occurred in the past few years due to both the development of compositionally-graded buffer layers and to an improved understanding of strain-relaxation in lattice-m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca8705842c75f8994d6b14f2ac7f0666
https://doi.org/10.1557/proc-442-313
https://doi.org/10.1557/proc-442-313