Zobrazeno 1 - 10
of 10
pro vyhledávání: '"P. N. Gorlei"'
Publikováno v:
Inorganic Materials. 41:1266-1269
The transition of Ge-, Sn-, and Pb-doped CdTe crystals to semi-insulating behavior is analyzed in terms of a charge compensation model which includes shallow donor and acceptor states and defects with midgap energy levels. Model predictions are compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72cc270861f7158ba38f5d9936dcf177
https://doi.org/10.1007/s10789-005-0298-3
https://doi.org/10.1007/s10789-005-0298-3
Autor:
O. G. Grushka, P. N. Gorlei
Publikováno v:
Semiconductors. 37:168-171
The influence of silicon impurity on the energy-band spectrum in the Hg3In2Te6 semiconductor compound, which incorporated a high concentration of stoichiometric vacancies, was studied on the basis of the results of electrical and optical measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b9878eebafee17dedc11629c9125433
https://doi.org/10.1134/1.1548659
https://doi.org/10.1134/1.1548659
Autor:
S. N. Chupyra, P. N. Gorlei, M. I. Ilashchuk, K. S. Ul'yanitskii, O. A. Parfenyuk, V. R. Burachek
Publikováno v:
Inorganic Materials. 39:1127-1131
The spectral and temperature dependences of photoconductivity in CdTe〈Pb〉 crystals under band-gap and combined excitation were studied at photon energies in the range 0.53–1.7 eV and temperatures from 80 to 300 K. The high photosensitivity of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9b584de46bedb865424e5b1b62ced0a
https://doi.org/10.1023/a:1027385122472
https://doi.org/10.1023/a:1027385122472
Publikováno v:
Semiconductors. 36:501-504
The effect of chromium doping on the energy spectrum of the density of states N(E) in the band gap of the Hg3In2Te6 semiconductor compound was studied. Although the chromium impurity has no significant effect on the electrical properties and the Ferm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d966cd223e4e661c6c0b1f8215960e5e
https://doi.org/10.1134/1.1478539
https://doi.org/10.1134/1.1478539
Publikováno v:
Inorganic Materials. 36:871-873
Heterojunctions in then-CdTe-p-ZnTe system were prepared via solid-state substitutions, and their properties were studied. Under small forward bias, the current-voltage characteristics of the heterojunctions, both in the dark and under illumination,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6a36c3a38728c8d989db2f58f66b630
https://doi.org/10.1007/bf02758694
https://doi.org/10.1007/bf02758694
Autor:
D. V. Kadel’nik, R. Tsyakh, N. D. Raranskii, Z. T. Kuznicki, Z. Swiaek, I. M. Fodchuk, P. N. Gorlei
Publikováno v:
Inorganic Materials. 36:508-510
The structural changes produced in the near-surface region of single-crystal Si upon fabrication of delta back-surface-field devices were studied by x-ray diffraction in an offset-asymmetric geometry. The results demonstrate that implantation of 180-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84e4de1a3c91c127b0acdaa6b0d92637
https://doi.org/10.1007/bf02758059
https://doi.org/10.1007/bf02758059
Publikováno v:
physica status solidi (b). 159:837-844
The effect of appearance of a constant current (at a closed circuit) in anisotropic semiconductors at propagation of longitudinal oscillations with an external carrier-heating electric field applied to the sample is investigated. The departure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb3b251931ff67fedbf9031302b72d3f
https://doi.org/10.1002/pssb.2221590231
https://doi.org/10.1002/pssb.2221590231
Publikováno v:
Technical Physics Letters. 24:343-345
Numerical methods are used to demonstrate the alternation between stable and chaotic states of a time-dependent system of nonequilibrium carriers in a semiconductor with parameters similar to n-GaAs, under conditions suitable for the Gunn effect to o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b17da6f5c16d18e93e1eb7f24b21d09
https://doi.org/10.1134/1.1262115
https://doi.org/10.1134/1.1262115
Autor:
V. A. Shenderovskii, A. I. Skitsko, V. V. Khomyak, L. S. Solonchuk, P. N. Gorlei, V. V. Koshman
Publikováno v:
physica status solidi (b). 161:K91-K93
L'analyse des differentes formules concernant cet effet Hall montre que la dependance E LH ∼H doit etre caracteristique des cristaux a basse symetrie. Ceci confirme les conclusions de la theorie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8597908eef8e16dc84e503479a7c9375
https://doi.org/10.1002/pssb.2221610249
https://doi.org/10.1002/pssb.2221610249
Publikováno v:
Technical Physics. 49:658-659
Mechanisms of current passage and the temperature dependence of the current-voltage characteristics in Schottky diodes produced by vacuum evaporation of indium on p-CuInSe2 single crystals are discussed. High values of the open-circuit voltage and sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee1efb8d7da4f9db8b6c0d66a65ef55
https://doi.org/10.1134/1.1758348
https://doi.org/10.1134/1.1758348